IRFM240 2N7219 MECHANICAL DATA Dimensions in mm (inches) 13.59 (0.535) 13.84 (0.545) N-CHANNEL POWER MOSFET 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) VDSS ID(cont) RDS(on) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 20.07 (0.790) 20.32 (0.800) 3.53 (0.139) Dia. 3.78 (0.149) 1 2 200V 18A 0.18 3 FEATURES * N-CHANNEL MOSFET * HIGH VOLTAGE 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) BSC * HERMETIC ISOLATED TO-254 PACKAGE 3.81 (0.150) BSC * ELECTRICALLY ISOLATED TO-254AA - Isolated Metal Package Pin 1 - Drain Pin 2 - Source Pin 3 - Gate ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VGS ID Gate - Source Voltage Continuous Drain Current IDM PD Pulsed Drain Current Max. Power Dissipation @ TC = 25C Linear Derating Factor Avalanche Current 1 Peak Diode Recovery 2 Thermal Resistance Junction - Case Thermal Resistance Junction - Ambient Operating Junction and Storage Temperature Range Lead Temperature (1.6mm from case for 10s) IAR dv / dt RJC RJA TJ , TSTG TL 1) 2) @ VGS = 10V , TC = 25C @ VGS = 10V , TC = 100C 20V 18A 11A 72A 125W 1.0W / C 18 5.0V / ns 1.0C / W 48C / W -55 to 150C 300C VDD = 50V , Starting TJ = 25C , L 1.3mH , VGS = 10V , Peak IL = 18A ISD 18A , di/dt 150A / S , VDD 200V , TJ 150C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 4145 Issue 1 IRFM240 2N7219 ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise stated) Parameter BVDSS Test Conditions STATIC ELECTRICAL RATINGS Drain - Source Breakdown Voltage BVDSS Temperature Coefficient of TJ RDS(on) VGS = 0 ID = 1mA Min. Typ. Max. V 200 Reference to 25C V / C 0.29 Breakdown Voltage ID = 1mA Static Drain - Source On-State VGS = 10V ID = 11A 0.18 VGS = 10V ID = 18A 0.25 VDS = VGS ID = 250A 2.0 VDS 15V IDS = 11A 6.1 VGS = 0 Resistance 2 VGS(th) Gate Threshold Voltage 2 4.0 V () S( VDS = 160V 25 TJ = 125C 250 A gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS Forward Gate - Source Leakage VGS = 20V 100 IGSS Reverse Gate - Source Leakage VGS = -20V -100 Ciss DYNAMIC CHARACTERISTICS Input Capacitance VGS = 0 1300 Coss Output Capacitance VDS = 25V 400 Crss Reverse Transfer Capacitance f = 1MHz 130 Qg Total Gate Charge VGS = 10V Qgs Gate - Source Charge ID = 18A 10.6 Qgd Gate - Drain ("Miller") Charge VDS = 100V 37.6 td(on) Turn- On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time nA pF 60 nC 20 VDD = 100V ID = 18A Unit 105 VGS = 10V 58 RG = 9.1 ns 67 SOURCE - DRAIN DIODE CHARACTERISTICS IS Continuous Source Current 18 1 ISM Pulse Source Current VSD Diode Forward Voltage 2 trr Reverse Recovery Time 2 72 IS = 18A TJ = 25C VGS = 0 IF = 18A 2 TJ = 25C di / dt 100A/s VDD 50V Qrr Reverse Recovery Charge ton Forward Turn-On Time LD PACKAGE CHARACTERISTICS Internal Drain Inductance Measured from drain lead (6mm / 0.25in from package) to 4.0 LS Internal Source Inductance 4.0 A 1.5 V 500 ns 5.3 C Negligible source lead (6mm / 0.25in from package). nH 1) Repetitive Rating - Pulse width limited by Maximum Junction Temperature 2) Pulse Test: Pulse Width 300s, 2%. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 4145 Issue 1