Document Number 4145
Issue 1
IRFM240
2N7219
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
VGS Gate – Source Voltage
IDContinuous Drain Current @ VGS = 10V , TC = 25°C
@ VGS = 10V , TC = 100°C
IDM Pulsed Drain Current
PDMax. Power Dissipation @ TC = 25°C
Linear Derating Factor
IAR Avalanche Current 1
dv / dt Peak Diode Recovery 2
RθJC Thermal Resistance Junction – Case
RθJA Thermal Resistance Junction – Ambient
TJ, TSTG Operating Junction and Storage Temperature Range
TLLead Temperature (1.6mm from case for 10s)
±20V
18A
11A
72A
125W
1.0W / °C
18
5.0V / ns
1.0°C / W
48°C / W
–55 to 150°C
300°C
MECHANICAL DATA
Dimensions in mm (inches)
123
13.59 (0.535)
13.84 (0.545)
3.53 (0.139)
3.78 (0.149) Dia.
6.32 (0.249)
6.60 (0.260) 1.02 (0.040)
1.27 (0.050)
30.35 (1.195)
31.40 (1.235)
16.89 (0.665)
17.40 (0.685)
13.59 (0.535)
13.84 (0.545)
20.07 (0.790)
20.32 (0.800)
3.81 (0.150)
BSC
0.89 (0.035)
1.14 (0.045) 3.81 (0.150)
BSC
TO–254AA – Isolated Metal Pac k age
Pin 1 Drain Pin 2 Source Pin 3 Gate
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
1) VDD = 50V , Starting TJ= 25°C , L 1.3mH , VGS = 10V , Peak IL= 18A
2) ISD 18A , di/dt 150A / µS , VDD 200V , TJ150°C
N–CHANNEL
POWER MOSFET
FEATURES
• N–CHANNEL MOSFET
• HIGH VOLTAGE
• HERMETIC ISOLATED TO-254 PACKAGE
• ELECTRICALLY ISOLATED
VDSS 200V
ID(cont) 18A
RDS(on) 0.18
Document Number 4145
Issue 1
IRFM240
2N7219
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter Test Conditions Min. Typ. Max. Unit
VGS = 0 ID= 1mA
Reference to 25°C
ID= 1mA
VGS = 10V ID= 11A
VGS = 10V ID= 18A
VDS = VGS ID= 250µA
VDS 15V IDS = 11A
VGS = 0 VDS = 160V
TJ= 125°C
VGS = 20V
VGS = 20V
VGS = 0
VDS = 25V
f = 1MHz
VGS = 10V
ID= 18A
VDS = 100V
VDD = 100V
ID= 18A VGS = 10V
RG= 9.1
IS= 18A TJ= 25°C
VGS = 0
IF= 18A TJ= 25°C
di/ dt100A/µsV
DD 50V
ELECTRICAL CHARACTERISTICS (TJ= 25°C unless otherwise stated)
Drain Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain Source OnState
Resistance 2
Gate Threshold Voltage
Forward Transconductance 2
Zero Gate Voltage Drain Current
Forward Gate
Source Leakage
Reverse Gate
Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain (Miller) Charge
Turn On Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Continuous Source Current
Pulse Source Current 1
Diode Forward Voltage 2
Reverse Recovery Time 2
Reverse Recovery Charge 2
Forward TurnOn Time
200
0.29
0.18
0.25
2.0 4.0
6.1 25
250
100
100
1300
400
130 60
10.6
37.6
20
105
58
67
18
72
1.5
500
5.3
Negligible
4.0
4.0
V
V/°C
V
S(
µA
nA
pF
nC
ns
A
V
ns
µC
nH
BVDSS
BVDSS
TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
IGSS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
Qrr
ton
LD
LS
STATIC ELECTRICAL RATINGS
1) Repetitive Rating Pulse width limited by Maximum Junction Temperature
2) Pulse Test: Pulse Width 300µs, δ≤2%.
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
Internal Drain InductanceMeasured from drain lead (6mm / 0.25in from package) to
Internal Source Inductance source lead (6mm / 0.25in from package).
PACKAGE CHARACTERISTICS
()