Jan. 2009
MITSUBISHI IGBT MODULES
CM100RX-12A
HIGH POWER SWITCHING USE
CM100RX-12A
¡IC ...................................................................100A
¡VCES ............................................................600V
¡7pack (3-phase Inverter + Brake)
¡Flatbase Type / Insulated Package /
Copper (non-plating) base plate
¡RoHS Directive compliant
APPLICATION
General purpose Inverters, Servo Amplifiers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
22
39
14
6.5
(3) (5.4)
12.5
(SCREWING DEPTH)
17
+1
-0.5
12
17
13.5 20.71 22.86 22.86 22.86
6-M5 NUTS
A
12 17
68.5
12
66
17
13.64
(21.14)
6.5
(21.14)
4-φ5.5 MOUNTING HOLES
121.7
110
±0.5
0.8
3.5
＊
114.06
＊
54.2
＊
34.52
＊
30.72
＊
15.48
＊
11.66
0
(110)
(102.25)
＊
95
＊
91.2
＊
79.76
＊
75.96
＊
64.52
＊
60.72
＊
49.28
＊
45.48
＊
34.04
＊
30.24
＊
18.8
＊
15
(7.75)
(20.5)
0
50
±0.5
77.1
62
0.8
57.5
39
99
94.5
136.9
LABEL
34
35
36
33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13
TERMINAL t = 0.8
(20.5)
(50)
7
SECTION A
(7.4)
1.2
1.5
12.5
φ2.5
φ4.3
φ2.1
(3.81)
1.15
0.65
12
11
10
9
8
7
6
5
12 43
17
13
GuN(30)
EuN(29)
EB(5)
GB(6)
P(35)
B(4)
N(36)
GuP(34)
EuP(33)
U(1)
GvN(22)
EvN(21)
GvP(26)
EvP(25)
V(2)
GwN(14)
EwN(13)
GwP(18)
EwP(17)
W(3)
TH2(10)
TH1(11)
NTC
＊Pin positions
with tolerance
φ0.5
CIRCUIT DIAGRAM
Toleranceotherwisespecified
Division of Dimension
0.5 to 3
over 3 to 6
over 6 to 30
over 30 to 120
over 120 to 400
Tolerance
±0.2
±0.3
±0.5
±0.8
±1.2
Jan. 2009
2
MITSUBISHI IGBT MODULES
CM100RX-12A
HIGH POWER SWITCHING USE
ABSOLUTE MAXIMUM RATINGS (T
j
= 25°C, unless otherwise specified)
INVERTER PART
Symbol Parameter Conditions Rating Unit
V
CES
V
GES
I
C
I
CRM
P
C
I
E (Note.3)
I
ERM(Note.3)
Collector-emitter voltage
Gate-emitter voltage
Collector current
Maximum collector dissipation
Emitter current
(Free wheeling diode forward current)
G-E Short
C-E Short
DC, T
C
= 75°C
Pulse
T
C
= 25°C
T
C
= 25°C
Pulse
600
±20
100
200
400
100
200
V
A
W
A
(Note. 1)
(Note. 4)
(Note. 1, 5)
(Note. 1)
(Note. 4)
BRAKE PART
Rating Unit
V
CES
V
GES
I
C
I
CRM
P
C
V
RRM(Note.3)
I
F (Note.3)
I
FRM(Note.3)
Collector-emitter voltage
Gate-emitter voltage
Collector current
Maximum collector dissipation
Repetitive peak reverse voltage
Forward current
G-E Short
C-E Short
DC, T
C
= 97°C
Pulse
T
C
= 25°C
T
C
= 25°C
Pulse
600
±20
50
100
280
600
50
100
V
A
W
V
A
(Note. 1)
(Note. 4)
(Note. 1, 5)
(Note. 1)
(Note. 4)
Symbol Parameter Conditions
MODULE
Rating Unit
T
j
T
stg
V
iso
Junction temperature
Storage temperature
Isolation voltage
Base plate flatness
Torque strength
Torque strength
Weight
Terminals to base plate, f = 60Hz, AC 1 minute
On the centerline X, Y
Main terminals
Mounting
(Typical)
(Note. 8)
–40 ~ +150
–40 ~ +125
2500
±0 ~ +100
2.5 ~ 3.5
2.5 ~ 3.5
330
°C
Vrms
μm
N·m
g
Note. 8: The base plate flatness measurement points are in the following figure.
—
—
—
—
Symbol Parameter Conditions
M5 screw
M5 screw
+
–
X
Y
–
+
Heatsinkside
Heatsinkside
+：convex
–：concave
Jan. 2009
3
MITSUBISHI IGBT MODULES
CM100RX-12A
HIGH POWER SWITCHING USE
ELECTRICAL CHARACTERISTICS (T
j
= 25°C, unless otherwise specified)
INVERTER PART
Limits Unit
Min. Typ. Max.
I
CES
V
GE(th)
I
GES
V
CE(sat)
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
t
rr (Note.3)
Q
rr (Note.3)
V
EC(Note.3)
R
th(j-c)Q
R
th(j-c)R
R
Gint
R
G
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Collector-emitter saturation
voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Thermal resistance
(Junction to case)
Internal gate resistance
External gate resistance
V
CE
= V
CES
, V
GE
= 0V
I
C
= 10mA, V
CE
= 10V
±V
GE
= V
GES
, V
CE
= 0V
I
C
= 100A, V
GE
= 15V
I
C
= 100A, V
GE
= 15V
V
CE
= 10V
V
GE
= 0V
V
CC
= 300V, I
C
= 100A, V
GE
= 15V
V
CC
= 300V, I
C
= 100A
V
GE
= ±15V, R
G
= 6.2Ω
Inductive load
(I
E
= 100A)
I
E
= 100A, V
GE
= 0V
I
E
= 100A, V
GE
= 0V
per IGBT
per free wheeling diode
T
C
= 25°C, per switch
—
6
—
1.7
1.9
1.6
—
—
—
270
—
—
—
—
—
4.8
2.0
1.95
1.9
—
—
0
—
1
7
0.5
2.1
—
—
13.3
1.4
0.45
—
100
100
300
600
200
—
2.8
—
—
0.31
0.59
—
62
—
5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6
mA
V
μA
V
nF
nC
ns
μC
V
K/W
Ω
T
j
= 25°C
T
j
= 125°C
Chip
(Note. 6)
(Note. 1)
(Note. 6)
T
j
= 25°C
T
j
= 125°C
Chip
(Note. 6)
Symbol Parameter Conditions
BRAKE PART
Limits Unit
Min. Typ. Max.
ICES
VGE(th)
IGES
VCE(sat)
Cies
Coes
Cres
QG
I
RRM(Note.3)
VFM(Note.3)
Rth(j-c)Q
Rth(j-c)R
RGint
RG
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Collector-emitter saturation
voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Repetitive peak reverse current
Forward voltage drop
Thermal resistance
(Junction to case)
Internal gate resistance
External gate resistance
VCE = VCES, VGE = 0V
IC = 5mA, VCE = 10V
±VGE = VGES, VCE = 0V
IC = 50A, VGE = 15V
IC = 50A, VGE = 15V
VCE = 10V
VGE = 0V
VCC = 300V, IC = 50A, VGE = 15V
VR = VRRM
IF = 50A
IF = 50A
per IGBT
per Clamp diode
TC = 25°C
—
6
—
1.7
1.9
1.6
—
—
—
200
—
2.0
1.95
1.9
—
—
0
—
1
7
0.5
2.1
—
—
9.3
1.0
0.3
—
1
2.8
—
—
0.44
0.85
—
130
—
5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
13
mA
V
μA
V
nF
nC
mA
V
K/W
Ω
Tj = 25°C
Tj = 125°C
Chip
(Note. 6)
(Note. 1)
(Note. 6)
Tj = 25°C
Tj = 125°C
Chip
(Note. 6)
Symbol Parameter Conditions
Jan. 2009
4
MITSUBISHI IGBT MODULES
CM100RX-12A
HIGH POWER SWITCHING USE
Note.1: Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. (Refer to the figure of the chip location.)
2: Typical value is measured by using thermally conductive grease of λ = 0.9W/(m·K).
3: IE, IERM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
IF, IFRM, VF, VRRM and IRRM represent ratings and characteristics of the Clamp diode of Brake part.
4: Pulse width and repetition rate should be such that the device junction temperature (Tj) dose not exceed Tjmax rating.
5: Junction temperature (Tj) should not increase beyond 150°C.
6: Pulse width and repetition rate should be such as to cause negligible temperature rise.
(Refer to the figure of the test circuit for VCE(sat) and VEC)
7:
NTC THERMISTOR PART
Limits Unit
Min. Typ. Max.
R
ΔR/R
B
(25/50)
P
25
Zero power resistance
Deviation of resistance
B constant
Power dissipation
T
C
= 25°C
T
C
= 100°C, R
100
= 493Ω
Approximate by equation
T
C
= 25°C
5.00
—
3375
—
5.15
+7.8
—
10
4.85
–7.3
—
—
kΩ
%
K
mW
(Note. 7)
Symbol Parameter Conditions
Chip Location (Top view) Dimensions in mm (tolerance: ±1mm)
MODULE
Limits Unit
Min. Typ. Max.
R
th(c-f)
Contact t
hermal resistance
(Case to fin)
Thermal grease applied
per 1 module 0.015 —
—K/W
(Note. 1) (Note. 2)
Symbol Parameter Conditions
(121.7)
(110)
(136.9)
22.2
31.7
41.2
50.7
78.8
79.4
88.4
96.8
99.5
(50)
(62)
0
0
(77.1)
24.8
29.4
32.2
36.8
0
21.3
30.4
41.2
LABEL SIDE
34
35
36
33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13
12
11
10
9
8
7
6
5
12 43
T
Ur
P
D
Ui
P
D
Bi
r
D
W
i
P
D
Vi
P
T
Ur
N
D
Ui
N
D
W
i
N
D
Vi
N
Th
T
Vr
P
T
Br
r
T
W
r
P
T
Vr
N
r
T
W
N
Each mark points the center position of each chip. Tr**: IGBT, Di**: FWDi (DiBr: Clamp diode), Th: NTC thermistor
R
25
: resistance at absolute temperature T
25
[K]; T
25
= 25 [°C]+273.15 = 298.15 [K]
R
50
: resistance at absolute temperature T
50
[K]; T
50
= 50 [°C]+273.15 = 323.15 [K]
B
(25/50)
= In( )/( )
R
25
R
50
1
T
25
1
T
50
Jan. 2009
5
MITSUBISHI IGBT MODULES
CM100RX-12A
HIGH POWER SWITCHING USE
trr, Qrr test waveform
t
I
E
t
rr
I
rr
1/2
✕
I
rr
Q
rr
= 1/2
✕
I
rr
✕
t
rr
0A
Switching time test circuit and waveforms
V
CC
+
I
C
V
CE
I
E
Arm
R
G
–
V
GE
+
V
GE
–
V
GE
Load
0V
V
GE
V
GE
I
C
t
d(on)
t
d(off)
t
r
t
f
90%
10%
0V
0A
90%
0%
P side Inverter part T
r
(example of U arm)
V
GE
= 0V(GvP-EvP, GwP-EwP, GvN-EvN,
GwN-EwN, GB-EB)
N side Inverter part T
r
(example of U arm)
V
GE
= 0V(GvP-EvP, GwP-EwP, GvN-EvN,
GwN-EwN, GB-EB)
V
CE(sat)
test circuit
B
r
T
r
V
GE
= 0V(GuP-EuP, GvP-EvP, GwP-EwP,
GuN-EuN, GvN-EvN, GwN-EwN)
P side Inverter part D
i
(example of U arm)
V
GE
= 0V(GvP-EvP, GwP-EwP, GvN-EvN,
GwN-EwN, GB-EB)
N side Inverter part D
i
(example of U arm)
V
GE
= 0V(GvP-EvP, GwP-EwP, GvN-EvN,
GwN-EwN, GB-EB)
B
r
D
i
V
GE
= 0V(GuP-EuP, GvP-EvP, GwP-EwP,
GuN-EuN, GvN-EvN, GwN-EwN)
V
EC
/V
FM
test circuit
IC
VGE = 15V
P
U
N
VGE = 0V
GuP
EuP
GuN
EuN
V
IC
VGE = 15V
P
U
N
VGE = 0V
GuP
EuP
GuN
EuN
VIC
VGE = 15V
P
B
N
GB
EB
V
IE
VGE = 0V
P
U
N
VGE = 0V
GuP
EuP
GuN
EuN
V
IE
VGE = 0V
P
U
N
VGE = 0V
GuP
EuP
GuN
EuN
V
IF
VGE = 0V
P
B
N
GB
EB
V
Jan. 2009
6
MITSUBISHI IGBT MODULES
CM100RX-12A
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
0
50
100
150
200
100246813579
Tj = 25°C
VGE =
20V
15
0
0.5
1
1.5
2
2.5
3
3.5
050 100 150 200
Tj = 25°C
Tj = 125°C
VGE = 15V
10
0
2
4
6
8
206 8 10 12 14 16 18
Tj = 25°C
IC = 200A
IC = 40A
10
2
10
1
5
7
2
3
00.5 11.5 22.5 33.5 4
10
3
5
7
2
3
10
1
10
2
23 57 10
3
23 57
Conditions:
V
CC = 300V
VGE = ±15V
RG = 6.2Ω
Tj = 125°C
Inductive load
12
13
11
10
9
8
10
0
7
5
3
2
10
1
7
5
3
2
10
2
7
5
3
2
10
3
7
5
3
2
10
4
td(off)
td(on)
tf
tr
IC = 100A
10
–1
210
0
357 2 10
1
357 210
2
357
10
–2
7
5
3
2
10
–1
7
5
3
2
10
0
7
5
3
2
10
1
7
5
3
2
10
2
Cies
VGE = 0V
Coes
Cres
Tj = 25°C
Tj = 125°C
OUTPUT CHARACTERISTICS
(TYPICAL) Inverter part
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL) Inverter part
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL) Inverter part
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL) Inverter part
EMITTER-COLLECTOR VOLTAGE VEC (V)
CAPACITANCE CHARACTERISTICS
(TYPICAL) Inverter part
CAPACITANCE (nF)
COLLECTOR-EMITTER VOLTAGE VCE (V)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)
EMITTER CURRENT IE (A)
SWITCHING TIME (ns)
Jan. 2009
7
MITSUBISHI IGBT MODULES
CM100RX-12A
HIGH POWER SWITCHING USE
10
0
10
0
10
–1
10
1
5
7
10
2
2
3
5
7
2
3
5
7
2
3
10
1
57
10
2
23 5723
Eoff
Eon
Err
10
3
10
2
10
1
2
3
5
7
2
3
5
7
10
0
10
1
57
10
2
23 5723
10
1
10
0
10
–1
Conditions:
VCC = 300V
VGE = ±15V
RG = 6.2Ω
Tj = 125°C
Inductive load
2
3
5
7
2
3
5
7
10
1
10
2
57
10
3
23 5723
Eoff
Eon
Err
10
3
10
2
10
1
Conditions:
VCC = 300V
VGE = ±15V
RG = 6.2Ω
Tj = 25°C
Inductive load
2
3
5
7
2
3
5
7
10
1
10
2
57
10
3
23 5723
trr
Irr
td(off)
td(on)
tr
tf
0 100 200 300 400
0
5
10
15
20
VCC = 200V
VCC = 300V
IC = 100A
10
–3
10
0
7
5
3
2
10
–2
7
5
3
2
10
–1
7
5
3
2
10
–5
23 57
10
–4
23 57
10
–3
23 57
10
–2
23 57
10
–1
23 57
10
0
23 57
10
1
Inverter IGBT part : Per unit base = R
th(j–c)
= 0.31K/W
Inverter FWDi part : Per unit base = R
th(j–c)
= 0.59K/W
Brake IGBT part : Per unit base = R
th(j–c)
= 0.44K/W
Brake Clamp-Di part : Per unit base = R
th(j–c)
= 0.85K/W
Conditions:
VCC = 300V
VGE = ±15V
IC = 100A
Tj = 125°C
Inductive load
Conditions:
VCC = 300V
VGE = ±15V
IC, IE = 100A
Tj = 125°C
Inductive load
Single pulse
TC = 25°C
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
SWITCHING LOSS (mJ/pulse)
GATE RESISTANCE RG
(Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
SWITCHING TIME (ns)
GATE RESISTANCE RG
(Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
SWITCHING LOSS (mJ/pulse) lrr
(A), trr
(ns)
COLLECTOR CURRENT IC
(A)
EMITTER CURRENT IE
(A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE WHEELING DIODE
(TYPICAL) Inverter part
EMITTER CURRENT IE
(A)
GATE CHARGE CHARACTERISTICS
(TYPICAL) Inverter part
GATE-EMITTER VOLTAGE VGE (V)
GATE CHARGE QG (nC)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j–c)
TIME (s)
Jan. 2009
8
MITSUBISHI IGBT MODULES
CM100RX-12A
HIGH POWER SWITCHING USE
100
101
2
3
5
102
7
2
3
5
7
0 0.5 1 1.5 2 2.5 3 3.5 4
T
j
= 25°C
T
j
= 125°C
0
0.5
1
1.5
2
2.5
3
3.5
010
20 30 40 50 60 70 80 90 100
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL) Brake part
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)
COLLECTOR CURRENT IC (A)
CLAMP DIODE
FORWARD CHARACTERISTICS
(TYPICAL) Brake part
FORWARD CURRENT I
F
(A)
FORWARD VOLTAGE VF (V)
