OPTOELECTRONICS PLASTIC SILICON INFRARED PHOTOSENSORS + 052 (1.32) _l [032 (.082) 208 3) (va? 27) 018 (46) ib SQ 2 PLCS: cw] (3.94) rl EMITTER 100 Le 54) Reception lceo/Vce Part Angie @ Icon) VIL aa] Teal et=ig 1/2 Sensitivity min max units max Phototransistor QSC112 +8 1.00 4.00 mA 30 100/10 1 QSC113 +8 2.40 9.60 mA 30 100/10 1 Qsc114 +8 4.00 - mA 30 100/10 1 Photodarlington QS8C133 +8 8.00 - mA 30 100/10 3, 6,7 020.51) SQ 2 PLCS 020 (51) RADIUS T-1 3/4 7 = Reception lceo/VceE 5mm Part Angle @ Ic(an) try Uae) & Number aT ART Sah ihah ay max units max PE OREACES Phototransistor aN L tr + QSD122 +12 1.00 6.00 mA 30 100/10 1 (20.3) 040 (4.02) NOM MIN QSD123 +12 4.00 16.0 mA 30 100/10 1 EMITTER QSD124 +12 6.00 - mA 30 100/10 1 csonas | te woremnon Oso i08 +12 6.00 - mA 30 100/10 1,6 - ; in 240 (6.10) sozrics] 215 (5.45) __ | 10-18 oes | Reception P= tA dol 3 178 (4. 45) 20 Angle Vn vat TCR! eT (nA)i(V) REFERENCE Fie 654) Number 1/2 Sensitivity max units WT Ps Phototransistor { & Qsp722 +20 0.60 3.80 mA 30 100/10 1 EMITTER ee QSD723 +20 250 10.00 mA 30 100/10 1 .050 (1.27) meso NOM QSD724 +20 3.50 - mA 30 100/10 1 215 (5.46) NOM| | | Photodarlington QSD733 +20 5.00 - mA 30 100/10 5,7 35OPTOELECTRONICS PLASTIC SILICON INFRARED PHOTOSENSORS Sidelooker a [~ 7, tet Td Col Iceo/Vce (0707) | oA Yes Angle @ Ic(on) (nA)/(V) 1) GY | U Number 1/2 Sensitivity min max units i Mar b.4 "| , Phototransistor ie ll I I L14Q1 * +35 100 - mA 30 100/25 4 _- Photodarlington meee LL gh L14R1 * +35 5.00 - mA 30 100/25 2 (28) ho 4 ea) T 2 =| Sidelooker Ler ge Reception IcEo/VcE (.050") Part Angle @ (nA)/(V) a * Ze Number Paik i max cm + Phototransistor es) Z| I & QSE113 25 0.25 150 mA 30 100/10 1 _ ( ( in QSE114 +25 1.00 - mA 30 100/10 1 sake QSE122 +25 3.00 120 mA 30 100/10 1 eae Photodarlington Ga lt 2 5 QSE133 +35 9.00 - mA 30 100/10 3 Tp a> Notes (Applies to all components on pages 35 and 36.) 1. On-State Collector Current @ E, = 0.5 mW/cm? (AlGaAs), Vcep = 5 V 2. On-State Collector Current @ E, = 0.3 mWicm? (GaAs), Vog = 1.5 V 3. On-State Collector Current @ E, = 0.25 mW/cm? (AlGaAs), Voge = 5 V 4, On-State Collector Current @ E, = 1.5 mW/cm? (GaAs), Vog = 5 V 5. On-State Collector Current @ E, = 0.125 mW/cm (AlGaAs), Voge = 5 V 6. Reverse Polarity 7. Orange stripe on the flange Maximum Ratings Table B (Applies to all components on pages 35 and 36.) Storage Temperature -40 to +100 C Operating Temperature -40 to +100 C Soldering: Lead Temperature (Iron) 240 C for 5s Lead Temperature (Flow) 260 C for 10s Collector-Emitter Breakdown Voltage 30 V Emitter-Collector Breakdown Voltage (L14R, QSE133) 6.0V (QSX, L14Q) 5.0V Power Dissipation 150 mW Derate linearly at 2.00 mW/ C above 25 C www.qtopto.com 36