1N3212 thru 1N3214R Silicon Standard Recovery Diode VRRM = 50 V - 600 V IF = 15 A Features * High Surge Capability * Types up to 600 V VRRM DO-5 Package Maximum ratings, at Tj = 25 C, unless otherwise specified Parameter Symbol ("R" devices have leads reversed) Conditions 1N3212 (R) 1N3213 (R) 1N3214 (R) Unit Repetitive p p peak reverse voltage g VRRM 400 500 600 V RMS reverse voltage VRMS 280 350 420 V DC blocking voltage VDC 400 500 600 V Continuous forward current IF TC 150 C 15 15 15 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 C, tp = 8.3 ms 297 297 297 A Operating temperature Storage temperature Tj Tstg -65 to 175 -65 to 175 -65 to 175 -65 to 175 -65 to 175 -65 to 175 C C Electrical characteristics, at Tj = 25 C, unless otherwise specified Parameter Diode forward voltage Reverse current Symbol VF IR Conditions 1N3212 (R) 1N3213 (R) 1N3214 (R) Unit IF = 15 A, Tj = 25 C VR = 50 V, Tj = 25 C VR = 50 V, Tj = 150 C 1.5 10 10 1.5 10 10 1.5 10 10 A mA 0.65 0.65 0.65 C/W V Thermal characteristics Thermal resistance, junction - ca www.genesicsemi.com RthJC 1 1N3212 thru 1N3214R www.genesicsemi.com 2