FQA47P06SMD2
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
3.60 (0.142)
Max.
3.68 (0.145)
3.43 (0.135)
3.68 (0.145)
3.43 (0.135)
1.27
(0.050)
min.
4.11 (0.162)
3.87 (0.152)
12.19 (0.480)
11.94 (0.470)
11.30 (0.445)
11.05 (0.435)
13.46 (0.530)
13.21 (0.520)
17.65 (0.695)
17.40 (0.685)
0.50 (0.020)
0.26 (0.010)
0.89
(0.035)
min.
13
2
VDSS Drain – Source Voltage
IDContinuous Drain Current (VGS = 0 , Tcase = 25°C)
IDContinuous Drain Current (VGS = 0 , Tcase = 100°C)
IDM Pulsed Drain Current 1
PDPower Dissipation @ Tcase = 25°C
Linear Derating Factor
EAS Single Pulse Avalanche Energy 2
IAR Avalanche Current 1
EAR Repetitive Avalanche Energy 1
dv/dt Peak Diode Recovery 3
TJ, Tstg Operating and Storage Temperature Range
TLLead Temperature 1.6mm (0.63”) from case for 10 sec.
MECHANICAL DATA
Dimensions in mm (inches) P–CHANNEL
POWER MOSFET
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
FEATURES
• HERMETICALLY SEALED SMD2
CERAMIC PACKAGE
• SIMPLE DRIVE REQUIREMENTS
• SCREENING OPTIONS AVAILABLE
SMD2 (TO276-AC) Ceramic Package
PAD 1 – Source PAD 2 – Drain PAD 3 – Gate
Notes
1) Repetitive Rating – Pulse width limited by maximum junction temperature.
2) @ VDD = –25V , L =0.315mH , RG= 25Ω, IAS = –55A , Starting TJ= 25°C
3) @ ISD ≤–47A , di/dt ≤–300A/µs , VDD ≤BVDSS , TJ≤25°C
VDSS –60V
ID(cont) –55A
RDS(on) 0.026ΩΩ
–60V
–55A
–38.9A
–220A
150W
1.0W/°C
820mJ
–55A
21.4mJ
–7.0V/ns
–55 to +175°C
300°C
Document Number 5684
Issue 1
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter Test Conditions Min. Typ. Max. Unit
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance 1
Gate Threshold Voltage
Forward Transconductance1
Zero Gate Voltage Drain Current
(VGS = 0)
Forward Gate
– Source Leakage
Reverse Gate
– Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current 2
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
FQA47P06SMD2
Document Number 5684
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
–60
–0.06
0.021 0.026
–2 –4
22 –1
–10
–100
100
2800
1300
320
84 110
18
44
50 110
450 910
100 210
195 400
–55A
–220A
–4.0
130
0.55
VGS = 0 ID= –250µA
Reference to 25°C
ID= –250µA
VGS = –10V ID= –27.5A
VDS = VGS ID= –250µA
VDS = –30V IDS = –27.5A
VDS = –60V
VDS = –48V TC= 125°C
VGS = –25V
VGS = 25V
VGS = 0
VDS = – 25V
f = 1MHz
VGS = –10V
ID= –47A
VDS = –48V
VDD = –30V
ID= –23.5A
RG= 25Ω
IS= –55A VGS = 0
VGS = 0
IF= –47A di/dt = 100A/µs
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
V
V/°C
Ω
V
S
µA
nA
pF
nC
ns
A
V
ns
µC
BVDSS
∆BVDSS
∆TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
IGSS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
Qrr
STATIC ELECTRICAL RATINGS
Notes 1) Pulse Test: Pulse Width ≤300µs, δ≤2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
