GENERAL DIODE CORP SILICON DIODES . .. cont'd Case Style DO-7 TYPE 1IN462A 1N463 IN463A 1N464 IN464A 1N482 1N482A 1N482B 1N483 IN483A 1N483B* 1N484 1N4s4A 1N4848 1N4a5 IN485A IN485B* IN486 TN486A 1N486B* 1N487 IN487A 1N48 TN488A , 1N625 1IN626 - IN627 ING28 1N629 IN643* ING45* . ING48 1N647 1N648 ING49 ING58* INGS9 1ING60* . INGG1* TN662* INGE3* 1ING73 IN676 1N677 ING78 4NG79 iNest IN682 1IN683 1NGa4 - , INGES IN68S 1N687 1N6e89 aw te S iat 2 0 100 150 200 ~ 200 275%2),. 360 (25 480(2) 600 (2) 720 (2) 120 5 110 220, 100 100 350 415 115 230 230 340 340 455 455 565 565 . 680. 680 awe 1.0 31 1.0 1 10 15 15 15 Da kik heh it at ah het at tek kt te tt tt 400 10 100 250 200 . * 400 200 400 200 -, 400 200 . 400 . 200 400 200 400 3869720 GENERAL DIODE CORP 86D 00338 D T= 0/- 07 8b DE fp 3869720 oo00338 3 i 2 5 3 bs) bas} ea ea - RS BS o 6 3 6 5 30 5 30 5 30 5 30 5 30 225 30 . 025 15 025 5 25 30 .025 15 025 5 25 30 3025 15 025 5 "25 30 025 15. 025 5 25 50 05, 25 05 10 25 50 al 25 * 25 50 ol 25 1.0 30 1.0 +30. 1,0 30 1.0, 30 10 30 025 - q@) a2 4s (2) 2 15 (2) 2 20 (2) 2 20 (2) 2 25 (2) 05 25 5 25 (1) 5 50 (1) 10 100 (1) 1 20 (1) 5 50 (1) 1 ' 10_ ~_ 1.0 - _ 1,0 1.0 _ 1.0 1.0 1.0 1.0 ~ _ 10 = 1.0 _ 10 1.0 ~~ a 30 \ -300., ~ 380 - 380 ~ 20 _ 35 ~ 75 - 125 ~ 175 _ 10 - 275 - 360 _ 480 600 - 720 ~ 50 - 3 50 - 3 100 _ 3 200 - 3 _ 10 = 5 75 _ 300 -_ 115 - 115 - 230 - 230 340 340 TIiltle 455 455 565 - S65 _ 680 _ 680 Notes: * Avatlable in mil. version (A) Silicon alloy construction (P) Silicon planar construction (1) 4-125C (2) 4+-100C 60 Eames Street __FramIngham, MA 01701 ae 250 (A) 250 (A) 250 (A) 250 (A) 250 (A) 250 (A) . 250 (AY 250 (A) 250 (A) ~ 250 (A). 250 (A) yA 250 (A) 250 (A) 250 (A) - 250 (A) | 250 (A) "250 (A) 250 (A) -| 250 (A) - 200(P) - 200(P) - - 200 (P) 200 (P) 200 (P) 200 (P) 400 (A) 400 (A) 400 (A) 400 (A) 400 (A) 200 (P) 200 (P) 200 (P) 200 (P) ~ 200 (P) 200 (P) 400 (A) 400 (A) 400 (A) 400 (A)- 400 (A) 400 (A) 400 (A) 400 (A) 400 (A) 400 (A): 400 (A) 400 (A) 400 (A) a GENERAL DIODE CORPORATION3869720 GENERAL DIODE CORP . 86D 00339 D T-Ol-0F9 GENERAL DIODE CORP 8b DE fj 3ab9720 0000339 5 i SILICON DIODES .. . cont'd , ) . Case StyleDO-7. mn . . . ? - a B % B J 2 na ZB oD Qo 3 * 8 2% \%\a\ & at 2 2 2 S Zz 7. o 2 mn Be S G 2 Zo. ar, % \ te a a \& \ 2 \ 42 ale e8 \agez $% @\e\ & \ 2 28 ee A \33 33 2\a\e\ 3 C am eT. , A ZS 2% @ 3. 3, 3, g % 3S TYPE @, ee & aA - e o> \ & = INGSB 40. 1 10 015 20 20 _ 005 250 (P) 1N697 120 1 250 1 800 60 25 .100 250 (P) 1N806 110 1.0 4 5 50 (1) 100 3 200 (P) 1N807 200 10 4 5 50 (1) 175 , 3 200 (P) 1N811 20 1.0 1 1.0 10 (1) 10 = 125 150 (P) 4N812 * 30 1.0 2 al 10 (1) 10 ~ 125 150 (P) 1N813 15 1.0 5 5 10 () 5 _ 25 150 (P) 1N814 40 1.0 2 a 10 (1) 20 25 "| 150(P) anets 15 1.5 100 5 10 (1) 125 _ 150 (P) *1NB1E* _ 0.64 + 10% 1 J - 4 _ " | . 280(A) 1N846 50 1 200 20 - 35 , _ 400 (A) 1N847 100 1 200 20 _- 70 _ - 400 (A) 1Ne48 200 1 200 20 _ 140 ", = 400 (A) 1N849 300 1 200 | 20 =_ 210 _ _ 400 (A) 1N850 400 1 200 "|" 20 _ 280 _ _ 400 (A) 1NQ51 500 1 200 20 _ 350 - _ 400 (A) 1N852 600 1 200 20.. _ 420 - a 400 (A) - |. 1N853 700 1 200 20 _ 490 __ _ 400 (A) 1Nes4 800 1 200 20 _ 560 ~ | 400 (A) ~ 4N855 900 ry 200 20 _ 630 = _ 400 (A) 4N856~ 1000 1 200 20 - +700 _ _ * 400 (A) , 1N8S7 | 50 1. 150 20 oo 35 - = 400 (A) 1N858. 100 i 150 20 _ 70 ~ _ -400 (A) 1N859 200 1 150 - 20 _ 40 _ _ 400 (A) 1N860 "300 1 150 20 210 _ _ 400 (A) 1N661 400 1 _ 150 20 : _ 280 - -_ 400 (A) 1Ne62 a 300 1 150 20 _ 350 _ _- 400 (A) 1N863 600 1 150 20 420 - - 400 (A) IN864 700 1 150 20 -_ 490 _ =_ 400 (A) INess 800 1 150 20 _ 560 _ _ 400 (A) 1N866 900 1 150 20 - 630 _- |, 400(A) 1N867 1000 1 150 20 - 700 _ - 400 (A) 1Ne08 50 1 t 150 20 - 35 _ -_ 400 (A) 1Ne69 100 1 100 20 100 ~~ _ 400 (A) 14N870 200 1 100 20 ~ 140 =_ - 400 (A) 1N872 400:@ 20n8 1 300 _ _= _ _ 400 (A) 1N873 500 1 100 20 ~ 350 - _ 400 (A) 1N874 - 1 100 100. - - 600 _ _ 400 (A) 1N675 700 @ 20 i: 100 ~ _ ~ __ _ 400 (A) 1N878 800 1 : 100 | (20 - 560 _- _ 400 (A) 1N877 900 1 100 20 _ 630 _ 400 (A) 1N878 - 1000 1 100 20 ~_ 700 _ ~, 400 (A) 1N879 | _ 1. 200 20 _ 50 = _ 400 (A) 1N880 100 2". 80 20 - 70 - _ 400 (A) 1N88] 200 1. a) 20 _ 140 ~- _ 400 (A) 1N882 300 1 . 0 20 _ 210 _ 400 (A) , _ 1N883 400 oi, a) 20 - 280 _ - 400 (A) . 1Ns84 500 1 50 20 - 350 -_ 2. 400 (A) 1N8868 5 1 200 20 ~ 700 _ 400 (A) 1NG87 800 4 50 20 _ 560 _ _ 400 (A) 1Ne88 900 @ 20za 1 200 ~ ~ _ ~ 400 (A) 1Ne89 1000 1 400 |= 20 _ 700 - _ 400 (A) Notes: * Available in mit. version (A) Silicon alloy construction (P) Silicon planar construction (1) {-125C a a * 90 Eames Street : oo _ __ Framingham, MA 01701 __(617) 879-0880-1-2 GENERAL DIODE CORPORATION3869720 GENERAL DIODE CORP e6eD 00340 D0 T-Or-09 GENERAL DIODE CORP Ab DEB 3449720 oo00340 4 i SILICON DIODES ...contd Case Stylepo0-7 a 3 a 2 3 < % 4 F % 3 ee \ & Za\te ta #3\ % \ ae\ ce mo Ba 2B 2 2 2 ou\ 8 Z2o\ 2B . Z ne B2\35 85 8\ % \ Se\ "3: = Zz oan < 2 rsa) TPE ee 2% 2-\"& "3 % Ss \ e@\ 3. ; : 7m Be od %.\ 2 @ Zz. 1N891 60 1 50 a 25 (3) 50 10 3 250 (P) 1N803 _ 1 10 a 10 (2) 40 _ 4 250 (P) INSO3A _ 1 20 al 10 (2) 40 _ 4 250 (P) Neos - 1 10 a 10 (2) 30 1 004 | 250 (P) TNSO4A 40 1 20 a 10 (2) 30 1 004 | 250 (P) 1N908 _ 1 10 a 10 (2) 20 1 .004 250 (P) INS0SA 30 1 20 1 10 (2) 20 1 .004 250 (P) 1N908 -_ 1 10 a 10 (2) , 20 2.5 004 | 250(P) INSOGA _ 1 20 a 10 (2) 20 25 .004 250 (P) 1NS07 ~ 1 10 a 10 (2) 30 25 004 | 250 (P) INSO7A 1 : 20 a 10 (2) 30 2.5 004 | 250 (P) 1N908 , 1 10 - J 10 (2) 40 2.5 004 250 (P) ANGO8A _ 1 20 al 10 (2) 40 2.5 004 | 250 (P) 1No14 100 1 10 025 50 , 20 4 004 | 250 (P) INST4A 100 1 20 025 50 * 20 4 004 | 250(P) 1Ns14B - 100 1 100 025 50 20 4 004, | 250(P) - ineie F ] 109 1 10 025 50 20 2 004 | 250 (P) | INS16A 100 1 20 025 50 20 2 (004 | 250 (P) 1N916B 75 1 20 .025 50 20 2 004 | 250 (P) 1N819 200 1 100 5 25 (2) 150 _ By 200 (P) 1N925 40 1 5 1 20 (2) 10 4 15 250(P). 1N926 40 1 5 1 10 (2) 10 4 15 250(P)- 1N827 . 65 1 10 A 10 (2) 10 4 15 | 250 (P) tNO28 _ 1 10 dl - 10 (2) 10/100 _ 15" | -250(P) Neds 40 15 100 25 20 a) .f 2 - | 250(P) _ IN893 . 8 15 10 1 - 6 | oo 50 (P) . 1N3062 75 @ Sua 1 20 Bi 100 50 1 .002 | ~ 250 (P) : 1N3063 75@ Sua } .505 min./.575 max. 25 1 100 50 2 004 j 250 (P) ~ 550 min./.650 max, 1 - | - _ 610 min.A710 mak, 52, | = _ - - - - 2700 min./.850 max. 10 ~ _ _ _ - 1N3084* 75 @Sua | - 1 10 1 100 59 2 004 | 250 (P) 1N3065 75@ Sua | 460 min/.s30max, + ot a" | 100 - 50 15 004 | 250 (P} . 7 a 4] 570 min./.670 max. 1 _ ~ 2 | .730 min./.880 max, 10 ~ _ _ - -_ IN3065 <] .800min/1.00 max.- 20 _ _- - _ - - 1N3066 75 @ Sua 1 10 a 100 50 1 002 | 250 (P) 1N3067 . 30@ Sha 1 5 a 100 20 4 004 | 250(P) $N3063 30 @ Sua 1 5 a 100 20 6 .050 250 (P) 1N309 |], 65 @ Sua 1 a 100 50 6 050 | 250 (P) 1N3070 200 1 "100 a 100 175 5 050 | 250 (P) 1N3071 206 ~.| 530 min./,630 max, 1 al 100 150 5 050 | 250 (P) | .640 min./.740 max, 10 =- = _ - _ -760 min./,920 max, 50 _ _ _ _ _ .800 min./1,00 max, 100 _ ~ _ _ ~ 1N2257 100 1 : 30 025 25 20/50 2 003 | 250 (P) 1N3258 100 : 1 * 100 025 25 20/50 004 | 250 (P) TN3600* - 54 min./62max, . 1 a 100 50 2.5 004 | 250 (P) . - 66 min./.74 max, ~ 10 _ _ _ _~ ~_ 76 min./.86 max. ~* 50 _ - ~ ~ _ - 82 min./.92 max. , 100 _ _ _- _ _ ~ : - 87 min./1.0 max, 200 . ~_ _ ~ _ _ _, " 1N3804 75 @ Sua 1 . 50 05 50 50 2 094 | 250 (P) rf a, * 4N3605 ~ 40 @ Sua | .490 min./.550 max, al 05 50 30 2 004 |* 250 (P) ee .530 min./.590 max. 125 - ~ _ _ - _ _ 590 min./.670 max, 1 _ _ - -~ _ , | 620 min./.700 max, 2 - ~ _ - ~_ - ~ | 700 min./.810 max, 10 ~ - _ _ _ _ Notes: * Available fn milf. version (A) Silicon alloy construction (P) Silicon planar construction (2) -+100C (3) -+50C eo. 80 Eames Street _ __ Framingham, MA 01701 _ (617) 879-0880-1-2 GENERAL DIODE CORPORATION3869720 GENERAL DIODE CORP 86D 00341 D 7-O/-O9F - Ab DE fj 3869720 Qooos41 43 GENERAL DIODE CORP SILICON DIODES ... cont'd Case Style DO-7 2 2 2 2 <2 ~ [any 3%, a Ss % C 2 : ee. ae Za\te ta %e\ % \ acl e Se eS 62\58 22 838\ 2.\ #3\ 23 S ~S 2% 2 a O y, aN 33 alee 38 2% \ &'.\ 93\ eee TYPE | S$ Zi .. @ g, 3 S * - .750 min,/.860 max. 20 - - en ~ _ . 2 1IN3608 75 @Sya | .490 min./,550 max, a 05 50 50 2 .004 250 (P) _ 530 min./.590 max, 25 _- _ _ _ _ _ - -590 min./.670 max. 1 -_ -_ _ _ _ +620 min./.700 max, 2 _ -, ~ _ _ : ~ +700 min./.810 max. 10 _ _. _ _ - == -740 min./.880 max, 20 - -_ _ _- 1N3653 100 1 400 .025 25 75 4 004 | 250 (P) 1N373t ~_ i 100 05 "50 50 2 003 250 (P) 1N4009 35.@ 5ya 1 30 a 100 25 4 004 | 250(P) 1N4087 .700 mjn./.750 max, 5 .09 100 50 _ 18 030 | 250 (P} . _ 975 max. 30 _ _ _ oN _- ~ IN4092 50 @ 10ya 1. 5 1 _ 10 4410 - 250 (A) _ _ ~~ _ 5 (4) 20 - . - . SG22 _ 64 + 10% 1 a = 2 _ | 250.4) * 1 $G22 1 100 _ _ _~ _ - $8211 80 15 5 .25 20 (2) 60 _ 3.1 200(P) SG212, 150 15 - 5B. 25 20 (2) 125 _ 3 -]- 200(P) $6213 200 15 5 25 50 (2) 175 3 200 (P) SG215 40 15 5 25 20 (2) 30. tay | 1 200 (P) SG218 80 15 5 25 20 (2) 0 om 1 200 (P) $6217 150 15 5 - 25 = 20 (2) 125 - 1 200 (P) SG218 200 15 5 225 50 (2) ~ 175 _ 1 200 (P) $G221- 80 15 30 25 20 (2) 60 - 5 200 (P) $G222 150 15 30 25, 20 (2). 125 ~ 5 200 (P) $6223 . 200 15 30 25 so @y 175 = 5 200 (P) SG225 - 40 . 18 100 .25 20 (2) 30 - 1 200 (P) SG226 80 "oS 100 125 20 (2) 60 _ 2 =] 200 (P) , G227 - 150 15 100 .25 20 (2) 125 _ 1 _ 200 (P) 86228 200 1. 100 25., 50 (2) 175 fa. 200 (P) sascoo =|. 100 @ Sua a 200 25 100 75 2 004 | 400(P) . 47 min,/.53 max. 2} _ _ - er _ 52 min./,.60 max. 1 - ~_ _ ~ _ 64 min./.72 max. 10 _~ _ _ _ _ _ . tm OE 67 min/77 max. 20 _ _~ _ _ $G5100 * 60 @ Sua 1 _ 400 25 100 30 4 004 | 400 (P) 7 A7 min./.53 max. 2] of _ _ _ ~ | - _ -52 min./.60 max. 1 _ _ _ _~ _ _ 64 min./.72 max, 10 =_ _ a _ - 67 min./.77,max. 20 _ _* _ s@s5200 75 @ Sua a4 400 25 100 50 4 004 | 400 (P) _- 47 min, /.53 max, 25 ~_ _ ~ _ _ _ are 52 min./.60 max. 1 _ ~ _ i 664 min./.72 max. 10 - _ ed 67 min./.77 max, 20 _ _ _ -_ SG5250 50 @ Sua 90 100 > 025 100 20 6 .004 200 (P) SG5260 75 @ 5a "90 100 - 025 100 20 6 2004 | 200 (P) $G5270 100 @ Sza 905, 100 16 100 75 6 008 | 200 (P) SG5300 100 @ Sua 1 300 25 100 75 2 004 | 400 (P) "| .47min.53 max. i a _ _ _ _ _ 52 min./.60-max, 1 ~ - -_ _ _ _ . _ 64 min./.72 max. 10 _ _ _. ~ _ 67 min./.77 max. 20 _ _ _ _ s$as400 150 @ Sza 2 + 200 .25 100 100 2 1004. | 400 (P) , _ <7 min. /.53 max. 25 a _ _ _ 4 _ . . - 52 min./,60 max. 1 - _ _ _ _ ~ - . - 64 min./.72 max. 10 - _ | _ _ - 67 min./.77 max, 20 _ ~ ~ _ SGS5800 30 @ Sua | .89 min/14 max, 50 1 50ue 50ua 15 75 700/sec| 200mwWw - 81 min./ .95 max. 20 - ~ - _ _ -~ -76 min./ .88 max, 10 - _~ ~ - _ _ 64 mind .74 max, 1 _ _ _ ~ 52 min./ 61 max, oh - - =_ - ~ _ - 42 min .50 max, 01 - = _ - - _ Notes: (A) Silicon alloy construction (P) Sillcon planar construction (2) --100 f 60 Eames Street _ | - _ Framingham, MA 01701 (617) 879-0800-1-2_ GENERAL DIODE CORPORATION86D 00342 GENERAL DIODE CORP SILICON DIODES .. . cont'd D 7-01-09 &b DEB 3869720 go00034e 5 T Case Style Do-35 Whiskerless 2 a -% of: a2 . 2 2 Zz Z 9 oe, . a Z2a\ % B S G B on aS m BF 2, 2 BS, a2\ S32 3e eS S 38 se 83/33 83 3)\ % ee, 2% @\ a% a@ 6m \ 8 TYPE a Ze ~ 4 ZB. c %, IN4148 100 1 10 025 50 20 4 1N4149 100 1 10 025 50 20 2 1N4150 0 54 min./.62 max, 1 al 100 - "50 25 .66 min,/.74 max. 10 -_ -_ ~ 7. 76 min./.86 max, 50 _ - _ ~ .82 min,/.92 max, 100 _ _ _ -~ . 87 min./1.0 max, 200 - _ _ ~ $N4151 75 1 50 .05 50 56 2 IN4152 40 490 min./.550 max, al 05 50 30 2 530 min./,.590 miax. 225 _ _ - - 6590 min./.670 max, 1 ~_ - - - 620 min./.700 max. 2 _ - _ _ -700 min,/,810 max, 10 _ - - . 740 min./.880 max, 20 - _ _ 1N4153." 75 -490 min./.550 max, a .05 50 50 2 530 min,/,590 max, 25 - - - - s590 min./.670 max, 1 - - - - +620 min./.700 max, 2 ~ - - _ 3700 min./.810 max. 10 -~ - - -. -740 min./.880 max. - 20 _ - - 1 * IN4154 35 - i 30 ol 100 25 4 IN4305 . 75 505 min./.575 max, 25 ol . 100 . 50 2 -550 min./.650 max, 1 - - om ~ 4610 min./.710 max. 2 _ _ - . -700 min./.850 max. to _- ~ - - IN4446 100 10 20 (025 05 20 4.0 1N4447 100 10 20 .025 50 20 2.0 1N4448 100 1.0 100 . 025 50 20 4.0 1N4448 100 1.0 30 -, 025 50 20 2.0 1N4454 75 @ Sua 1.0 10 a 100 80 2.0 1N4606 85 @ 100ua 11 250 . 25@100C 50 25 Notes: (A) Slilcon alloy construction (P) Silicon planar construction (4) +-oC * . Case Style Do-35 $G9150 30 1.0 "4,10 1.0 100 25 10 $G9200 100 10 200 25 100 30 2 - $G9210 +80 - 1.0 400 25 100 715 4 $G9220 1 1.0 400 .25 100 80 4 $G9230 100 1.0 300 125 100 45 2 $G9240 150 1.0 200 25 _ 100 100 2 $G9600 50 87 min./1.0 max, 200 al "foo 50 2.5 4 Case Style Do-34 Whiskerless , 1N4531 100 10-1? 025 50 20 4 1N4532 75 1.0 ma 10 al 100 50 2 1N4533 40 7 min./,81 max, 10 05 50 30 2 1N4534 75 7 min/.81 max. 10 05 50 50 -" 2 1N4536 35 1.0 30 el 100 25 4 1N5317 80 Ml 300 z _ 100 55 2.5 1N5318 75 1.0 200 ol 100 50 25 IN5319 40 1.0 100 ll 100* 25 3.5 * Measured at 100C .? $ 90 Eames Street Framingham, MA 01701 (617) 879-0880-1-2 i TALEESEE ES] O10 ,004 008 004 004 004 004 004 | *.004 004 .004 004 004 004 004 250 500 250 400 400 400 400 400- 600 250. 250 250 250 250 400 400 400 GENERAL DIODE CORPORATION