NTE5550 thru NTE5558
Silicon Controlled Rectifiers
Description:
The NTE5550 thru NTE5558 SCR’s are designed primarily for half–wave AC control applications,
such as motor controls, heating controls and power supply crowbar circuits.
Features:
DGlass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability.
DSmall, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation
and Durability.
DBlocking Voltage to 800 Volts
D300A Surge Current Capability
Absolute Maximum Ratings:
Peak Reverse Blocking Voltage (Note 1), VRRM
NTE5550 50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5552 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5554 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5556 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5558 800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Current (TC = +85°C), IT(RMS) 25A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(All Conduction Angles), IT(AV) 16A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Non–Repetitive Surge Current (8.3ms), ITSM 300A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(1/2 Cycle, Sine Wave, 1.5ms) 350A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Peak Gate Power, PGM 20W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Average Gate Power, PG(AV) 0.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Peak Gate Current, IGM 2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ–40° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, RthJC 1.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. VRRM for all types can be applied on a continuous dc basis without incurring damage.
Ratings apply for zero or negative gate voltage. Devices should not be tested for block-
ing capability in a manner such that the voltage supplied exceeds the rated blocking
voltage.
Electrical Characteristics: (TC = +25°C unless otherwise noted.)
Parameter Symbol Min Typ Max Unit
Peak Forward Blocking Voltage, (TJ = +125°C)
NTE5550
NTE5552
NTE5554
NTE5556
NTE5558
VDRM 50
200
400
600
800
–
–
–
–
–
–
–
–
–
–
V
Peak Forward or Reverse Blocking Current,
(Rated VDRM or VRRM)T
J = +25°C
TJ = +125°C
IDRM, IRRM –
––
–10
2µA
mA
Forward “ON” Voltage, (ITM = 50A, Note 2) VTM – – 1.8 V
Gate Trigger Current (Continuous DC), TC = +25°C
(Anode Voltage = 12Vdc, RL = 100Ω) TC = –40°CIGT –
––
25 40
75 mA
Gate Trigger Voltage (Continuous DC)
(Anode Voltage = 12Vdc, RL = 100Ω, TC = –40°C) VGT –1 1.5 V
Gate Non–Trigger Voltage
(Anode Voltage = Rated VDRM, RL =100Ω, TJ = +125°C) VGD 0.2 – – V
Holding Current
(Anode Voltage = 12Vdc, TC = –40°C) IH–35 40 mA
Turn–On Time
(ITM = 25A, IGT = 50mAdc) tgt –1.5 2 µs
Turn–Off Time (VDRM = rated voltage)
(ITM =25A, IR = 25A)
(ITM =25A, IR = 25A, TJ = +125°C)
tq–
–15
35 –
–
µs
Critical Rate of Rise of Off–State Voltage
(Gate Open, Rated VDRM, Exponential Waveform) dv/dt –50 –V/µs
Note 2. Pulse Test: Pulse Width ≤300µs, Duty Cycle ≤ 2%.
.250 (6.35)
Max
.500
(12.7)
Max
.500
(12.7)
Min
.110 (2.79)
.420 (10.67)
Max
.070 (1.78) Max
Cathode
.100 (2.54) Anode/Tab
Gate
.147 (3.75)
Dia Max
