Product Specification www.jmnic.com
Silicon PNP Power Transistors 2SA1075 2SA1076
DESCRIPTION
·With MT-200 package
·Complement to type 2SC2525,2SC2526
·Fast switching speed
·Excellent safe operating area
APPLICATIONS
·High frequency power amplifiers
·Audio power amplifiers
·Switching regulators
·DC-DC converters
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Collector;connected to
mounting base
3 Emitter
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
2SA1075 -120 V
VCBO Collector-base voltage 2SA1076 Open emitter -160 V
2SA1075 -120 V
VCEO Collector-emitter voltage 2SA1076 Open base -160 V
VEBO Emitter-base voltage Open collector -7 V
IC Collector current -12 A
PC Collector power dissipation TC=25℃ 120 W
Tj Junction temperature 150 ℃
Tstg Storage temperature -65~150 ℃
JMnic
Product Specification www.jmnic.com
JMnic
Silicon PNP Power Transistors 2SA1075 2SA1076
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
2SA1075 -120
V(BR)CEO Collector-emitter
breakdown voltage 2SA1076 IC=-1mA ;RBE=∞ -160 V
2SA1075 -120
V(BR)CBO Collector-base
breakdown voltage 2SA1076 IC=-50μA; IE=0 -160 V
V(BR)EBO Emitter-base breakdown voltage IE=-50μA; IC=0 -7 V
VCEsat Collector-emitter saturation voltage IC=-5A;IB=-0.5A -1.8 V
VBE Base-emitter voltage IC=-5A;VCE=-5V -1.7 V
2SA1075 VCB=-120V; IE=0
ICBO Collector cut-off current 2SA1076 VCB=-160V; IE=0 -50 μA
2SA1075 VCE=-120V; IB=0
ICEO Collector cut-off current 2SA1076 VCE=-160V; IB=0 -1 mA
IEBO Emitter cut-off current VEB=-7V; IC=0 -50 μA
hFE-1 DC current gain IC=-1A ; VCE=-5V 60 200
hFE-2 DC current gain IC=-7A ; VCE=-5V 40
Cob Output capacitance IE=0 ; VCB=-10V 300 pF
fT Transition frequency IC=-1A ; VCE=-10V 45 MHz
Switching times
tr Rise time -0.15 μs
ts Storage time -0.50 μs
tf Fall time
IC=- 7.5A;RL=4Ω
IB1=- IB2=-0.75A
-0.11 μs
Product Specification www.jmnic.com
JMnic
Silicon PNP Power Transistors 2SA1075 2SA1076
PACKAGE OUTLINE
Fig.2 outline dimensions
