SPECIFICATION
Device Name ：
Type Name ：
Spec. No. ：
D A T E
APPROVED
N A M E
DRAWN
CHECKED
DWG.NO.
H04-004-07b
MS5D3032 1/12
Fuji Electric Device Technology Co.,Ltd.
CHECKED
This material and the
information herein is the property of
Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied
,
lent,
or disclosed in any way
whatsoever for the use of any
third party nor used
for the manufacturing purposes with out
the express written consent of
Fuji Electric Device Technology Co.,Ltd.
JAN.-25-‘07
JAN.-25-‘07
JAN.-25-‘07
SILICON DIODE
TP802C04RF192
MS5D3032
DWG.NO.
H04-004-06b
Revised Records
DWG.NO.
MS5D3032 2/12Fuji Electric Device Technology Co.,Ltd.
This material and the information herein is the property of
Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,
lent,
or disclosed in any way whatsoever for the use of any
third party nor used
for the manufacturing purposes without
the express written consent of
Fuji Electric Device Technology Co.,Ltd.
Date Classi-
fication Ind. Content Applied
date Drawn Checked Approved
JAN.-25
-2007 Enactment ― ―――――― Issued
date
DWG.NO.DWG.NO.
MS5D3032 3/12
H04-004-03a
Fuji Electric Device Technology Co.,Ltd.
This material and the information herein is the property of
Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,
lent,
or disclosed in any way whatsoever for the use of any
third party nor used
for the manufacturing purposes without
the express written consent of
Fuji Electric Device Technology Co.,Ltd.
1. SCOPE
This specification provides the ratings and the test requirement for FUJI SILICON DIODE
TP802C04RF192
2. OUT VIEW, MARKING, MOLDING RESIN, FORMING,CHARACTERISTICS
(1) Out view is shown MS5D3032 8/12
(2) Marking is shown MS5D3032 8/12
It is marked to type name or abbreviated type name, polarity and Lot No.
(3) Molding resin
Epoxy resin UL:V-0
(4) Forming is shown MS5D3032 9/12
(5) Characteristics is shown MS5D3032 10/12～12/12
Bar Code Label of EIAJ C-3 Specification. Indispensable description items are shown as below.
(1) Type Name
(2) Production Code
(3) Quantity
(4) Lot №(Date code)
(5) Company Code
3. RATINGS
3.1 MAXIMUM RATINGS (at Ta=25℃unless otherwise specified.)
ITEM SYMBOL CONDITIONS RATINGS UNITS
Repetitive peak surge reverse voltage VRSM tw=500ns,duty=1/40 48 V
Repetitive peak reverse voltage VRRM 40 V
Average output current Io 50Hz Square wave duty =1/2
T
c
=
116
℃10 * A
Non-repetitive forward surge current** IFSM Sine wave, 10ms 1shot 120 A
Operating junction temperature Tj 150 ℃
Storage temperature Tstg -40～＋150 ℃
*Out put current of center tap full wave connection.
**Rating per element
3.2 ELECTRICAL CHARACTERISTICS (at Ta=25℃unless otherwise specified.)
ITEM SYMBOL CONDITIONS MAXIMUM UNITS
Forward voltage *** VFIF= 4 A 0.55 V
Reverse current *** IRVR= VRRM 5 mA
Thermal resistance Rth(j-c) Junction to case 3 ℃/W
*** Rating per element
3.3 MECHANICAL CHARACTERISTICS
Approximate mass 1.6 g
DWG.NO.DWG.NO.
MS5D3032 4/12
H04-004-03a
Fuji Electric Device Technology Co.,Ltd.
This material and the information herein is the property of
Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,
lent,
or disclosed in any way whatsoever for the use of any
third party nor used
for the manufacturing purposes without
the express written consent of
Fuji Electric Device Technology Co.,Ltd.
4. TEST AND INSPECTION
4.1 STANDARD TEST CONDITION
Standard test condition is Ta=25℃、65%R.H.
If judgment is no doubt, the test condition is possible to test in normal condition
Ta=5～35℃、48～85%R.H.
4.2 STRUCTURE INSPECTION
It inspect with eye and measure, Item 2 shall be satisfied.
4.3 FORWARD AND REVERSE CHARACTERISTICS
It inspect on the standard condition, Item 3.2 shall be satisfied.
4.4 TEST
Test
No.
Test
Items Testing methods and Conditions
Reference
Standard
EIAJ
ED4701
Sampling
number Acceptance
number
1 Terminal
Strength
(Tensile)
Pull force : 10N
Force maintaining duration :10±1s EIAJ
ED4701/401
method 1 5
2 Terminal
Strength
(Bending)
Load force : 5N
Number of times : 2times(90deg./time) EIAJ
ED4701/401
method 3 5
3 Vibration Frequency : 100Hz to 2kHz
Acceleration : 100m/s2
Sweeping time : 4min./1 cycle
4times for each X, Y&Z directions.
EIAJ
ED4701/403
test code D 5
4 Shock Peak amplitude : 15km/s2
Duration time : 0.5ms
3times for each X, Y&Z directions.
EIAJ
ED4701/404
test code D 5
Solder ability 1 Solder : Sn-37Pb
Solder temp. : 235±5℃
Immersion time : 5±0.5s
Apply to flux
5
5
Solder ability 2 Solder : Sn-3Ag-0.5Cu
Solder temp. : 245±5℃
Immersion time : 5±0.5s
Apply to flux
EIAJ
ED4701/303
test code A
5
6 Resistance to
Soldering
Heat
Solder temp. : 260±5°C
Immersion time : 10±1s
Number of times : 1times
EIAJ
ED4701/302
test code A 5
(0 : 1)
DWG.NO.DWG.NO.
MS5D3032 5/12
H04-004-03a
Fuji Electric Device Technology Co.,Ltd.
This material and the information herein is the property of
Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,
lent,
or disclosed in any way whatsoever for the use of any
third party nor used
for the manufacturing purposes without
the express written consent of
Fuji Electric Device Technology Co.,Ltd.
Test
No.
Test
Items Testing methods and Conditions
Reference
Standard
EIAJ ED4701
Sampling
number
Acceptance
number
1 High Temp.
Storage Temperature :Ｔstg max
Test duration : 1000h
EIAJ
ED4701/201 22
2 Low Temp.
Storage Temperature :Ｔstg min
Test duration : 1000h
EIAJ
ED4701/202 22
3 Temperature
Humidity
Storage
Temperature : 85±2°C
Relative humidity : 85±5%
Test duration : 1000h
EIAJ
ED4701/103
test code C 22
4 Temperature
Humidity
Bias
Temperature : 85±2°C
Relative humidity : 85±5%
Bias Voltage : VRRM× 0.8
Test duration : 1000h
EIAJ
ED4701/103
test code C 22
5 Unsaturated
Pressurized
Vapor
Temperature : 130±2°C
Relative humidity : 85±5%
Vapor pressure : 230kPa
Test duration : 48h
EIAJ
ED4701/103
test code F 22
6 Temperature
Cycle
High temp. side : Tstg max
Room temp. : 5～35℃
Low temp. side : Tstg min
Duration time : HT 30min,RT 5min LT 30min
Number of cycles : 100 cycles
EIAJ
ED4701/105 22
7 Thermal
Shock
Fluid : pure water(running water)
High temp. side : 100+0/-5°C
Low temp. side : 0+5/-0°C
Duration time : HT 5min,LT 5min
Number of cycles : 100 cycles
EIAJ
ED4701/307
test code A 22
8 Steady state
Operating
life
Ta=25±5°C
Rated load
Test duration : 1000h
22
9 Intermittent
Operating
life
Tj=Tjmax ～50℃
3min ON, 3min OFF
Test duration : 10000cycles
EIAJ
ED4701/106 22
Endurance test
10 High Temp.
Reverse
Bias
Temperature : Ta=100 °C
Bias Voltage : VR=VRRM duty=1/2
Test duration : 1000h
EIAJ
ED4701/101 22
(0 : 1)
IR≦USL x 2 USL : Upper specification LimitFailure Criteria
VF≦USL x 1.1
DWG.NO.DWG.NO.
MS5D3032 6/12
H04-004-03a
Fuji Electric Device Technology Co.,Ltd.
This material and the information herein is the property of
Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,
lent,
or disclosed in any way whatsoever for the use of any
third party nor used
for the manufacturing purposes without
the express written consent of
Fuji Electric Device Technology Co.,Ltd.
5.Cautions
・Although Fuji Electric is continually improving product quality and reliability, a small percentage of
semiconductor products may become faulty. When using Fuji Electric semiconductor products in your
equipment, you are requested to take adequate safety measures to prevent the equipment from
causing physical injury, fire, or other problem in case any of the products fail. It is recommended to
make your design fail-safe, flame retardant, and free of malfunction.
・The products described in this specification are intended for use in the following electronic and
electrical equipment which has normal reliability requirements.
・Computers ・OA equipment ・Communications equipment (Terminal devices)
・Measurement equipment ・Machine tools ・AV equipment
・Electrical home appliances ・Personal equipment ・Industrial robots etc.
・The products described in this Specification are not designed or manufactured to be used in equipment
or systems used under life-threatening situations. If you are considering using these products in the
equipment listed below, first check the system construction and required reliability, and take adequate
safety measures such as a backup system to prevent the equipment from malfunctioning.
・Transportation equipment (automobiles, trains, ships, etc.)
・Backbone network equipment ・Traffic-signal control equipment
・Gas alarms, leakage gas auto breakers ・Submarine repeater equipment
・Burglar alarms, fire alarms, emergency equipment ・Medical equipment
・Nuclear control equipment etc.
・Do not use the products in this Specification for equipment requiring strict reliability such as (but not
limited to):
・Aerospace equipment ・Aeronautical equipment
6.Warnings
・The Diodes should be used in products within their absolute maximum rating (voltage, current,
temperature, etc. ). The diodes may be destroyed if used beyond the rating.
・The equipment containing Diodes should have adequate fuses or circuit breakers to prevent the
equipment from causing secondary destruction (ex. fire, explosion etc…).
・Use the Diodes within their reliability and lifetime under certain environments or conditions.
The Diodes may fail before the target lifetime of your products if used under certain reliability
conditions.
・You must design the Diodes to be operated within the specified maximum ratings (voltage, current,
temperature, etc. ) to prevent possible failure or destruction of devices.
・Consider the possible temperature rise not only for the junction and case, but also for the outer leads.
・Do not directly touch the leads or package of the Diodes while power is supplied or during operation, to
avoid electric shock and burns.
・The Diodes are made of incombustible material. However, if a Diode fails, it may emit smoke of flame.
Also, operating the Diodes near any flammable place or material may cause the Diodes to emit smoke
or flame in case the Diodes become even hotter during operation.
Design the arrangement to prevent the spread of fire.
・The Diodes should not used in an environment in the presence of acid, organic matter, or corrosive gas.
(hydrogen sulfide, sulfurous acid gas.)
・The Diodes should not used in an irradiated field since they are not radiation proof.
DWG.NO.DWG.NO.
MS5D3032 7/12
H04-004-03a
Fuji Electric Device Technology Co.,Ltd.
This material and the information herein is the property of
Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,
lent,
or disclosed in any way whatsoever for the use of any
third party nor used
for the manufacturing purposes without
the express written consent of
Fuji Electric Device Technology Co.,Ltd.
Installation
・Soldering involves temperatures which exceed the device storage temperature rating. To avoid
device damage and to ensure reliability, observe the following guidelines from the quality
assurance standard.
Table 1: Solder temperature and duration
Method Solder
temperature Duration
Flow 260±5℃10±1sec
Soldering iron 350±10℃3.5±0.5sec
・The immersion depth of the lead should basically be up to the lead stopper and the distance
should be a maximum of 1.5mm from the device.
・When flow-soldering, be careful to avoid immersing the package in the solder bath.
Storage
・The Diodes must be stored at a standard temperature of 5 to 35℃and relative humidity of 45
to 75%.If the storage area is very dry, a humidifier may be required. In such a case, use only
deionized water or boiled water, since the chlorine in tap water may corrode the leads.
・The Diodes should not be subjected to rapid changes in temperature to avoid condensation on
the surface of the Diodes. Therefore, store the Diodes in a place where the temperature is
steady.
・The Diodes should not be stored on top of each other, since this may cause excessive external
force on the case.
・The Diodes should not be stored with the lead terminals remaining unprocessed. Rust may
cause presoldered connections to go fail during later processing.
・The Diodes should be stored in antistatic containers or shipping bags.
7.Appendix
・This products does not contain PBBs (Polybrominated Biphenyl) or PBDEs (Polybrominated
Diphenyl Ether ) , substances.
・This products does not contain Class-I ODS and Class-II ODS substances set force by ‘Clean Air
Act of US’law.
・If you have any questions about any part of this Specification, please contact Fuji Electric Device
Technology or its sales agent before using the product
・Neither Fuji nor its agents shall be held lia
ble for any injury caused by using the products not in
accordance with the instructions.
・
The application examples described in this specification are merely typical uses of Fuji Electric
DeviceTechnology products.
This specification does not confer any in
dustrial property rights or other rights, nor constitute a
license for such rights.
DWG.NO.DWG.NO.
MS5D3032 8/12
H04-004-03a
Fuji Electric Device Technology Co.,Ltd.
This material and the information herein is the property of
Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,
lent,
or disclosed in any way whatsoever for the use of any
third party nor used
for the manufacturing purposes without
the express written consent of
Fuji Electric Device Technology Co.,Ltd.
Sn-Cu dipping(Pb＜1000ppm)
DWG.NO.DWG.NO.
MS5D3032 9/12
H04-004-03a
Fuji Electric Device Technology Co.,Ltd.
This material and the information herein is the property of
Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,
lent,
or disclosed in any way whatsoever for the use of any
third party nor used
for the manufacturing purposes without
the express written consent of
Fuji Electric Device Technology Co.,Ltd.
DWG.NO.DWG.NO.
MS5D3032 10/12
H04-004-03a
Fuji Electric Device Technology Co.,Ltd.
This material and the information herein is the property of
Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,
lent,
or disclosed in any way whatsoever for the use of any
third party nor used
for the manufacturing purposes without
the express written consent of
Fuji Electric Device Technology Co.,Ltd.
0 1 2 3 4 5 6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Square wave =180°
Sine wave =180°
Square wave =120°
Per 1element
DC
Square wave =60°
Forward Power Dissipation (max.)
WF Forward Power Dissipation (W)
Io Average Output Current (A)
0 5 10 15 20 25 30 35 40 45 50
0
1
2
3
4
5
6
PR Reverse Power Dissipation (W)
VR Reverse Voltage (V)
=180°
Reverse Power Dissipation (max.)
DC
λ
360
°
I0
α
360°
VR
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Tj=25°C
Tj=100°C
Tj=125°C
Tj=150°C
Forward Characteristic (typ.)
IF Forward Current (A)
VF Forward Voltage (V)
0 10 20 30 40 50
10-3
10-2
10-1
100
101
102
Tj=25°C
Tj=100°C
Tj=125°C
Tj=150°C
Reverse Characteristic (typ.)
IR Reverse Current (mA)
VR Reverse Voltage (V)
DWG.NO.DWG.NO.
MS5D3032 11/12
H04-004-03a
Fuji Electric Device Technology Co.,Ltd.
This material and the information herein is the property of
Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,
lent,
or disclosed in any way whatsoever for the use of any
third party nor used
for the manufacturing purposes without
the express written consent of
Fuji Electric Device Technology Co.,Ltd.
0 2 4 6 8 10 12 14 16
70
80
90
100
110
120
130
140
150
160
Square wave =60°
Square wave =120°
Square wave =180°
Sine wave =180°
Tc Case Temperature (°C)
Io Average Output Current (A)
:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
DC
Current Derating (Io-Tc) (max.)
λ
360
°
I0
VR=20V
V
10 100
100
1000 Junction Capacitance Characteristic (typ.)
Cj Junction Capacitance (pF)
VR Reverse Voltage (V)
1 10 100
10
100
1000
Surge Capability (max.)
IFSM Peak Half - Wave Current (A)
Number of Cycles at 50Hz
DWG.NO.DWG.NO.
MS5D3032 12/12
H04-004-03a
Fuji Electric Device Technology Co.,Ltd.
This material and the information herein is the property of
Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,
lent,
or disclosed in any way whatsoever for the use of any
third party nor used
for the manufacturing purposes without
the express written consent of
Fuji Electric Device Technology Co.,Ltd.
10-3 10-2 10-1 100101102
10-1
100
101
102
T Time (sec)
Transient Thermal Impedance (°C/W)
Rth j-c:3.0°C/W
Transient Thermal Impedance (max.)