BSS138W N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data * * * * * * * * Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Lead Free/RoHS Compliant (Note 1) "Green" Device (Notes 2 and 3) Case: SOT-323 Case Material: Molded Plastic, "Green" Molding Compound, Note 6. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.006 grams (approximate) * * * * Drain SOT-323 D Gate G S Source Top View Top View Equivalent Circuit Ordering Information (Note 3 & 4) Part Number BSS138W -7-F Notes: Case SOT-323 Packaging 3000/Tape & Reel 1. 2. 3. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. 4. For packaging details, go to our website at http://www.diodes.com. K38 Date Code Key Year Code 1998 J 1999 K 2000 L 2001 M 2002 N YM Marking Information 2003 P K38 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) 2004 R 2005 S 2006 T 2007 U 2008 V 2009 W 2010 X 2011 Y 2012 Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D BSS138W Document number: DS30206 Rev. 10 - 2 1 of 5 www.diodes.com January 2011 (c) Diodes Incorporated BSS138W Maximum Ratings @TA = 25C unless otherwise specified Characteristic Drain-Source Voltage Drain-Gate Voltage (Note 5) Gate-Source Voltage Drain Current (Note 6) Thermal Characteristics Symbol VDSS VDGR VGSS ID Continuous Continuous Value 50 50 20 200 Units V V V mA Value 200 625 -55 to +150 Units mW C/W C @TA = 25C unless otherwise specified Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Symbol PD RJA TJ, TSTG Electrical Characteristics @TA = 25C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 50 75 0.5 100 V A nA VGS = 0V, ID = 250A VDS = 50V, VGS = 0V VGS = 20V, VDS = 0V VGS(th) RDS (ON) gFS 0.5 100 1.2 1.4 1.5 3.5 V mS VDS = VGS, ID = 250A VGS = 10V, ID = 0.22A VDS = 25V, ID = 0.2A, f = 1.0KHz Ciss Coss Crss 50 25 8.0 pF pF pF VDS = 10V, VGS = 0V, f = 1.0MHz tD(ON) tD(OFF) 20 20 ns ns VDD = 30V, ID = 0.2A, RGEN = 50 5. RGS 20K. 6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com. 7. Short duration pulse test used to minimize self-heating effect. BSS138W Document number: DS30206 Rev. 10 - 2 2 of 5 www.diodes.com January 2011 (c) Diodes Incorporated BSS138W 0.6 0.8 0.5 0.4 0.3 0.2 0.1 0 0 0.7 0.5 0.3 0.2 0.1 0 0 1 VGS(th), GATE THRESHOLD VOLTAGE (V) 2.05 1.85 VGS = 10V ID = 0.5A 1.65 1.45 1.25 VGS = 4.5V 1.05 ID = 0.075A 0.85 4.5 1.8 1.6 1.2 1 0.8 0.6 0.4 0.2 0 -55 45 145 -5 95 Tj, JUNCTION TEMPERATURE (C) Fig. 3 Drain-Source On Resistance vs. Junction Temperature -25 5 35 65 95 125 155 Tj, JUNCTION TEMPERATURE (C) Fig. 4 Gate Threshold Voltage vs. Junction Temperature 8 9 150 C VGS = 2.5V 3 -55C 2 1 150C 7 ON RESISTANCE () RDS(ON), STATIC DRAIN-SOURCE 25 C 4 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 ID, DRAIN CURRENT (A) Fig. 5 Drain-Source On Resistance vs. Drain Current Document number: DS30206 Rev. 10 - 2 6 5 25C 4 3 -55C 2 1 0 0 BSS138W VGS = 2.75V 8 6 5 ID = 1.0mA 1.4 0.65 -55 ON RESISTANCE () 2.5 0.5 1 1.5 2 3 3.5 4 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Transfer Characteristics 2 2.25 ON RESISTANCE () RDS(ON), NORMALIZED DRAIN-SOURCE 150C 0.4 2.45 RDS(ON), STATIC DRAIN-SOURCE 25C 0.6 5 6 9 10 2 3 4 7 8 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Drain-Source Current vs. Drain-Source Voltage 7 -55C VDS = 1V ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN-SOURCE CURRENT (A) Tj = 25C 3 of 5 www.diodes.com 0 0.1 0.15 0.25 0.2 ID, DRAIN CURRENT (A) Fig. 6 Drain-Source On Resistance vs. Drain Current 0 0.05 January 2011 (c) Diodes Incorporated BSS138W 3.5 6 VGS = 10V VGS = 4.5V 4 3 25C 2 -55C 1 150C 3 ON RESISTANCE () RDS(ON), STATIC DRAIN-SOURCE 5 ON RESISTANCE () RDS(ON), STATIC DRAIN-SOURCE 150C 2.5 2 25C 1.5 1 -55C 0.5 0 0 0 0.1 0.2 0.3 0.4 0.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 7 Drain-Source On Resistance vs. Drain Current 0.3 0.4 0.5 0.2 ID, DRAIN CURRENT (A) Fig. 8 Drain-Source On Resistance vs. Drain Current 0 0.1 100 1 VGS = 0V f = 1MHz C, CAPACITANCE (pF) ID, DIODE CURRENT (A) Ciss 150C 0.1 -55 C 25C 0.01 10 Coss Crss 0.001 0 0.2 0.4 0.8 1 1.2 0.6 VSD, DIODE FORWARD VOLTAGE (V) Fig. 9 Body Diode Current vs. Body Diode Voltage 1 0 30 5 10 15 20 25 VDS, DRAIN SOURCE VOLTAGE (V) Fig. 10 Capacitance vs. Drain Source Voltage Package Outline Dimensions A SOT-323 Dim Min Max Typ A 0.25 0.40 0.30 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 G 1.20 1.40 1.30 H 1.80 2.20 2.15 J 0.0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30 M 0.10 0.18 0.11 0 8 All Dimensions in mm B C G H K J M D BSS138W Document number: DS30206 Rev. 10 - 2 L 4 of 5 www.diodes.com January 2011 (c) Diodes Incorporated BSS138W Suggested Pad Layout Y Z Dimensions Value (in mm) Z 2.8 X 0.7 Y 0.9 C 1.9 E 1.0 C X E IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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