BSS138W
Document number: DS30206 Rev. 10 - 2 1 of 5
www.diodes.com January 2011
© Diodes Incorporated
BSS138W
N-CHANNEL ENHAN CEMENT MODE MOSFET
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Lead Free/RoHS Compliant (Note 1)
• "Green" Device (Notes 2 and 3)
Mechanical Data
• Case: SOT-323
• Case Material: Molded Plastic, "Green" Molding Compound,
Note 6. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.006 grams (approximate)
Ordering Information (Note 3 & 4)
Part Number Case Packaging
BSS138W -7-F SOT-323 3000/Tape & Reel
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012
Code J K L M N P R S T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT-323
Top View Equivalent Circuit To
p
View
GS
D
K38 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
Source
Gate
Drain
K38
YM
BSS138W
Document number: DS30206 Rev. 10 - 2 2 of 5
www.diodes.com January 2011
© Diodes Incorporated
BSS138W
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 50 V
Drain-Gate Voltage (Note 5) VDGR 50 V
Gate-Source Voltage Continuous VGSS ±20 V
Drain Current (Note 6) Continuous ID 200 mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 6) PD 200 mW
Thermal Resistance, Junction to Ambient R
θ
JA 625 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS 50 75 ⎯ V VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 0.5 µA
VDS = 50V, VGS = 0V
Gate-Body Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS
(
th
)
0.5 1.2 1.5 V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance RDS
(
ON
)
⎯ 1.4 3.5 Ω V
GS = 10V, ID = 0.22A
Forward Transconductance gFS 100 ⎯ ⎯ mS VDS = 25V, ID = 0.2A, f = 1.0KHz
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ⎯ ⎯ 50 pF
VDS = 10V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss ⎯ ⎯ 25 pF
Reverse Transfer Capacitance Crss ⎯ ⎯ 8.0 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD
(
ON
)
⎯ ⎯ 20 ns
VDD = 30V, ID = 0.2A,
RGEN = 50Ω
Turn-Off Delay Time tD
(
OFF
)
⎯ ⎯ 20 ns
Notes: 5. RGS ≤ 20KΩ.
6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com.
7. Short duration pulse test used to minimize self-heating effect.
BSS138W
Document number: DS30206 Rev. 10 - 2 3 of 5
www.diodes.com January 2011
© Diodes Incorporated
BSS138W
0
0.1
0.2
0.3
0.4
0.5
0.6
1
032 5
47
68910
I, D
R
AI
N
-S
O
U
R
C
E
C
U
R
R
E
N
T
(A)
D
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Drain-Source Current vs. Drain-Source Voltage
DS
T = 25 C
j
°
0
V , GATE-SOURCE VOLTAGE (V)
Fig. 2 Transfer Characteristics
GS
0.1
0.2
0.3
0.5
0.4
0.6
0.7
0.8
01
1.50.5 2 3.5 44.52.5 3
I, D
R
AIN-S
O
U
R
C
E
C
U
R
R
EN
T
(A)
D
-55 C
°
150 C
°
25 C
°
V = 1V
DS
0.65
T, JUNCTION TEMPERATURE (°C)
Fig. 3 Drai n- S ource On Re sistance vs. Junction Te m p erature
j
0.85
1.05
1.25
1.65
1.45
1.85
2.05
2.25
2.45
-55 -5 45 95 145
V = 10V
GS
V = 4.5V
GS
I = 0.5A
D
I = 0.075A
D
R , NORMALIZED DRAIN-SOURCE
ON RESIS TANCE ( )
DS(ON)
Ω
0
0.2
0.4
0.6
0.8
1
1.4
1.2
2
1.8
1.6
-55 5-25 35 9565 125 155
V,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(th)
T, JUNCTION TEMPERATURE (°C)
Fig. 4 Gate Threshold Voltage vs. Junction Temperature
j
I = 1.0mA
D
0
I , DRAIN CURRENT (A)
Fig. 5 Drain-Source On Resistance vs. Drain Current
D
1
2
3
4
5
6
7
8
00.02 0.04 0.06 0.08 0.160.140.120.1
150 C
°
-55 C
°
25 C
°
V = 2.5V
GS
R , STATIC DRAIN-SOURCE
ON RESISTANCE ( )
DS(ON)
Ω
0
I , DRAIN CURRENT (A)
Fig. 6 Drai n- S ource On Re sista n ce vs. Drai n C u r rent
D
1
2
3
5
4
6
7
8
9
00.05 0.1 0.2
0.15 0.25
150 C
°
-55 C
°
25 C
°
V = 2.75V
GS
R
, S
T
A
T
I
C
D
R
AIN-S
O
U
R
C
E
ON RESISTANCE ( )
DS(ON)
Ω
BSS138W
Document number: DS30206 Rev. 10 - 2 4 of 5
www.diodes.com January 2011
© Diodes Incorporated
BSS138W
0
1
2
3
4
5
6
00.1 0.2 0.3 0.4 0.5
V , DRAIN-SOURCE VOLT AGE (V)
Fig . 7 Drain-So urce On Res istance vs. Drain Cu r r ent
DS
150 C
°
-55 C
°
25 C
°
V = 4.5V
GS
R
, S
T
A
T
I
C
D
R
AI
N
-S
O
U
R
C
E
ON RESISTANCE ( )
DS(ON)
Ω
0
0.5
1
1.5
2
2.5
3
3.
5
00.1 0.2 0.3 0.4 0.5
I , DRAIN CURRENT (A)
Fig . 8 Drain-S ource On Resistance vs. D r ain Curre nt
D
150 C
°
-55 C
°
25 C
°
V = 10V
GS
R
, S
T
A
T
I
C
D
R
AIN-S
O
U
R
C
E
ON RESIST ANCE ( )
DS(ON)
Ω
I, DI
O
DE
C
U
R
R
EN
T
(A )
D
0.001
0.01
0.1
1
V , DIODE FORWARD VOLTAGE (V)
Fig. 9 Body Diode Current vs. Body Diode Voltage
SD
00.20.4
0.6 0.8 1 1.2
150 C
°
-55 C
°
25 C
°
C
,
C
A
P
A
C
I
T
AN
C
E (
p
F
)
1
10
100
V , DRAI N SOURCE VOLTAG E (V)
Fig. 10 Capacitance vs. Drain Source V oltage
DS
0 5 10 15 20 25 30
V = 0V
f = 1MHz
GS
C
rss
C
oss
C
iss
Package Outline Dimensions
SOT-323
Dim Min Max Typ
A 0.25 0.40 0.30
B 1.15 1.35 1.30
C 2.00 2.20 2.10
D - - 0.65
G 1.20 1.40 1.30
H 1.80 2.20 2.15
J 0.0 0.10 0.05
K 0.90 1.00 1.00
L 0.25 0.40 0.30
M 0.10 0.18 0.11
α 0° 8° -
All Dimensions in mm
A
M
JL
D
BC
H
K
G
BSS138W
Document number: DS30206 Rev. 10 - 2 5 of 5
www.diodes.com January 2011
© Diodes Incorporated
BSS138W
Suggested Pad Layout
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated p roducts for any unintended or una uthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign p atents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
www.diodes.com
Dimensions Value (in mm)
Z 2.8
X 0.7
Y 0.9
C 1.9
E 1.0
XE
Y
C
Z
