Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 1 of 4 February 2009
ECG006B
InGaP HBT Gain Block
Product Features
• DC – 4.5 GHz
• 15.2 dB Gain @ 1 GHz
• +15.5 dBm P1dB @ 1 GHz
• +32 dBm OIP3 @ 1 GHz
• 3.7 dB Noise Figure
• Internally matched to 50 Ω
• Robust 1000V ESD, Class 1C
• Lead-free/RoHS-compliant SOT-
89 Package
Applications
• Mobile Infrastructure
• CATV / FTTX
• WLAN / ISM
• RFID
• WiMAX / WiBro
Product Description
The ECG006B is a general-purpose buffer amplifier that
offers high dynamic range in a low-cost surface-mount
package. At 1000 MHz, the ECG006B typically provides
15.2 dB of gain, +32 dBm Output IP3, and +15.5 dBm
P1dB.
The ECG006B consists of a Darlington-pair amplifier using
the high reliability InGaP/GaAs HBT process technology
and only requires DC-blocking capacitors, a bias resistor,
and an inductive RF choke for operation. The device is
ideal for wireless applications and is available in low-cost,
surface-mountable plastic lead-free/RoHS-compliant SOT-
89 packages. All devices are 100% RF and DC tested.
The broadband MMIC amplifier can be directly applied to
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, and W-CDMA. In addition,
the ECG006B will work for other various applications
within the DC to 4.5 GHz frequency range such as CATV
and mobile wireless.
Functional Diagram
RF IN GND
RF OUT
GND
1
2
3
4
Function Pin No.
Input 1
Output/Bias 3
Ground 2, 4
Specifications (1)
Parameter Units Min Typ Max
Operational Bandwidth MHz DC 4500
Test Frequency MHz 1000
Gain dB 15.2
Output P1dB dBm +15.5
Output IP3 (2) dBm +32
Test Frequency MHz 2000
Gain dB 13.3 14.6 17.2
Input Return Loss dB 15
Output Return Loss dB 13
Output P1dB dBm +12 +15
Output IP3 (2) dBm +32
Noise Figure dB 4.0
Device Voltage V 3.5 3.9 4.3
Device Current mA 45
1. Test conditions unless otherwise noted: 25º C, Supply Voltage = +5 V, Rbias = 24.3 Ω, 50 Ω System.
2. 3OIP measured with two tones at an output power of +2 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter Rating
Storage Temperature -55 to +150 °C
Device Current 150 mA
RF Input Power (continuous) +12 dBm
Thermal Resistance 131 °C/W
Junction Temperature +160 °C
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance (1)
Parameter Units Typical
Frequency MHz 500 900 1900 2140
S21 dB 15.6 15.3 14.6 14.5
S11 dB -16 -16 -15 -15
S22 dB -14 -14 -13 -13
Output P1dB dBm +15.8 +15.4 +15 +15
Output IP3 (2) dBm +32 +32 +30 +30
Noise Figure dB 3.7 3.7 3.7 3.7
Ordering Information
Part No. Description
ECG006B-G InGaP HBT Gain Block
(lead-free/RoHS-compliant SOT-89 package)
ECG006B-PCB 700 – 2400 MHz Fully Assembled Eval. Board
Standard tape / reel size = 1000 pieces on a 7” reel.
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 2 of 4 February 2009
ECG006B
InGaP HBT Gain Block
Typical Device RF Performance
Supply Bias = +5 V, Rbias = 24.3 Ω
ΩΩ
Ω, Icc = 45 mA
Frequency MHz 100 500 900 1900 2140 2400 3500 4500
S21 dB 15.8 15.6 15.3 14.6 14.5 14.4 13.7 12.7
S11 dB -16 -16 -16 -15 -15 -15 -14 -12
S22 dB -14 -14 -14 -13 -13 -13 -12 -9
Output P1dB dBm +15.8 +15.4 +15.2 +15.0 +14.9 +14.6 +14
Output IP3 dBm +31 +31.5 +32 +30 +30 +29.6
Noise Figure dB 3.8 3.7 3.6 3.6 3.6 3.6
1. Test conditions: T = 25º C, Supply Voltage = +5 V, Device Voltage = +3.9 V, Rbias = 24.3 Ω, Icc = 45 mA typical, 50 Ω System.
2. 3OIP measured with two tones at an output power of +2 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.
Gain vs. Frequency
8
10
12
14
16
18
500 1000 1500 2000 2500 3000
Frequency (MHz)
Gain
+25C -40C +85C
S11, S22 vs. Frequency
-25
-20
-15
-10
-5
0
0123456
Frequency (GHz)
S11, S22 (dB)
S22
S11
Vde vs. Icc
0
10
20
30
40
50
60
70
80
90
3.00 3.20 3.40 3.60 3.80 4.00 4.20 4.40
Vde (V)
Icc (mA)
+25C
OIP3 vs. Frequency
15
20
25
30
35
500 1000 1500 2000 2500 3000
Frequency (MHz)
OIP3 (dBm)
+25°C -40°C
Noise Figure vs. Frequency
2
2.5
3
3.5
4
500 1000 1500 2000
Frequency (MHz)
NF (dB)
P1dB vs. Frequency
8
10
12
14
16
18
500 1000 1500 2000 2500 3000
Frequency (MHz)
P1dB (dBm)
+25°C -40°C
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 3 of 4 February 2009
ECG006B
InGaP HBT Gain Block
Recommended Application Circuit
Recommended Component Values
Reference Frequency (MHz)
Designator 50 500 900 1900 2200 2500 3500
L1 820 nH 220 nH 68 nH 27 nH 22 nH 18 nH 15 nH
C1, C2, C4 .018 µF 1000 pF 100 pF 68 pF 68 pF 56 pF 39 pF
1. The proper values for the components are dependent upon the intended frequency of operation.
2. The following values are contained on the evaluation board to achieve optimal broadband performance:
Ref. Desig. Value / Type Size
L1 39 nH wirewound inductor 0603
C1, C2 56 pF chip capacitor 0603
C3 0.018 µF chip capacitor 0603
C4 Do Not Place
R4 24.3Ω 1% tolerance 0805
Recommended Bias Resistor Values
Supply
Voltage R1 value Size
5 V 24.4 ohms 0805
6 V 46.7 ohms 0805
8 V 91 ohms 1210
9 V 113 ohms 1210
10 V 136 ohms 2010
12 V 180 ohms 2010
The proper value for R1 is dependent upon the supply
voltage and allows for bias stability over temperature.
WJ recommends a minimum supply bias of +5 V. A
1% tolerance resistor is recommended.
Typical Device S-Parameters
S-Parameters (Vdevice = +3.9 V, ICC = 45 mA, T = 25°C, calibrated to device leads)
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
50 -16.18 -2.18 15.76 178.02 -18.89 -0.38 -14.36 -2.29
500 -16.13 -22.13 15.57 160.12 -18.77 -2.87 -14.40 -26.41
1000 -15.97 -44.58 15.21 141.76 -18.46 -5.33 -14.15 -51.57
1500 -15.79 -68.38 14.80 124.56 -17.94 -9.45 -13.78 -77.30
2000 -15.34 -96.24 14.64 108.50 -17.29 -14.37 -13.23 -104.15
2500 -14.99 -124.42 14.34 91.11 -16.69 -21.48 -12.79 -131.75
3000 -14.73 -153.90 14.02 74.20 -16.16 -29.16 -12.22 -160.58
3500 -14.29 174.59 13.65 56.77 -15.76 -38.37 -11.63 170.65
4000 -13.38 141.41 13.22 39.56 -15.49 -47.75 -10.44 143.61
4500 -11.80 110.87 12.66 22.19 -15.29 -57.59 -9.04 117.68
5000 -9.66 85.53 12.00 5.48 -15.28 -68.56 -7.50 96.34
5500 -7.85 63.77 11.20 -10.89 -15.43 -79.10 -6.12 76.71
6000 -6.37 47.01 10.36 -26.75 -15.69 -89.87 -4.95 59.58
Device S-parameters are available for download from the website at: http://www.TriQuint.com
C1
Blocking
Capacitor
RF OUT
L1
RF Choke
C3
0.018 µF
R4
Bias
Resistor
RF IN
C4
Bypass
Capacitor
C2
Blocking
Capacitor
Vcc
Icc = 45 mA
ECG006
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Page 4 of 4 February 2009
ECG006B
InGaP HBT Gain Block
Mechanical Information
This package is lead-free/Green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free
(maximum 260 °C reflow temperature) and leaded (maximum 245 °C reflow temperature) soldering processes.
Outline Drawing
Land Pattern
Product Marking
A lot code (“XXXX-X”) is also marked below
the part designator on the top surface of the
package. Tape and reel specifications for this
part are located on the website in the
“Application Notes” section.
MSL / ESD Rating
ESD Rating: Class 1A
Value: Passes between 250 and 500V
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
MSL Rating: Level 3 at +260 °C convection reflow
Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper performance of this
device. Vias should use a .35mm (#80 / .0135”) diameter drill and
have a final plated thru diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer layers near the
part to ensure optimal thermal performance.
3. Mounting screws can be added near the part to fasten the board to a
heatsink. Ensure that the ground / thermal via region contacts the
heatsink.
4. Do not put solder mask on the backside of the PC board in the
region where the board contacts the heatsink.
5. RF trace width depends upon the PC board material and
construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are in degrees.
E006G
XXXX
-
X