© 2009 IXYS All rights reserved 1 - 3
DSEP 29-12A
20091012a
IXYS reserves the right to change limits, test conditions and dimensions.
IFAV =30A
VRRM = 1200 V
trr =40ns
VRSM VRRM Type
V V
1200 1200 DSEP 29-12A
Symbol Conditions Maximum Ratings
IFRMS 35 A
IFAVM TC = 115°C; rectangular, d = 0.5 30 A
IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 200 A
EAS TVJ = 25°C; non-repetitive 14 mJ
IAS = 11.5 A; L = 180 µH
IAR VA = 1.25·VR typ.; f = 10 kHz; repetitive 1.2 A
TVJ -55...+175 °C
TVJM 175 °C
Tstg -55...+150 °C
Ptot TC = 25°C 165 W
Mdmounting torque 0.4...0.6 Nm
Weight typical 2 g
Symbol Conditions Characteristic Values
typ. max.
IRVR = VRRM;T
VJ = 25°C 250 µA
TVJ = 150°C 1 mA
VFIF = 30 A; TVJ = 150°C 1.81 V
TVJ = 25°C 2.75 V
RthJC 0.9 K/W
RthCH 0.5 K/W
trr IF = 1 A; -di/dt = 200 A/µs; 40 ns
VR = 30 V; TVJ = 25°C
IRM VR = 100 V; IF = 50 A; -diF/dt = 100 A/µs 8.5 11.4 A
TVJ = 100°C
HiPerFREDTM Epitaxial Diode
with soft recovery
Features
• International standard package
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low IRM-values
• Soft recovery behaviour
• Epoxy meets UL 94V-0
Applications
• Antiparallel diode for high frequency
switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Avalanche voltage rated for reliable
operation
• Soft reverse recovery for low EMI/RFI
• Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0%
Pulse Width = 300 µs, Duty Cycle < 2.0%
Data according to IEC 60747 and per diode unless otherwise specified.
C
A
A = Anode, C = Cathode, TAB = Cathode
C
A
TO-220 AC
C (TAB)
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© 2009 IXYS All rights reserved 2 - 3
DSEP 29-12A
20091012a
IXYS reserves the right to change limits, test conditions and dimensions.
C
G
D
J
K
HF
B
A
M
N
L
Q
E
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© 2009 IXYS All rights reserved 3 - 3
DSEP 29-12A
20091012a
IXYS reserves the right to change limits, test conditions and dimensions.
200 600 10000400800
120
140
160
180
200
220
0.00001 0.0001 0.001 0.01 0.1 1
0.001
0.01
0.1
1
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
0 200 400 600 800 1000
0
20
40
60
80
100
120
0.0
0.2
0.4
0.6
0.8
1.0
1.2
200 600 10000400800
0
10
20
30
40
50
60
100 1000
0
1
2
3
4
5
01234
0
10
20
30
40
50
60
70
K
f
T
VJ
[°C]
t [s]
V
FR
[V] I
RM
[A]
Q
r
[µC]
I
F
[A]
V
F
[V] -di
F
/dt [A/µs]
t
rr
[ns]
Z
thJC
[K/W]
-di
F
/dt [A/µs]
-di
F
/dt [A/µs] -di
F
/dt [A/µs]
V
FR
t
rr
Fig. 1 Forward current I
F
vs. V
F
Fig. 2 Typ. reverse recovery charge Q
r
versus -di
F
/dt
Fig. 3 Typ. peak reverse current I
RM
versus -di
F
/dt
Fig. 4 Dynamic parameters Q
r
, I
RM
versus T
VJ
Fig. 5 Typ. recovery time t
rr
vs. -di
F
/dt Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
Fig. 7 Transient thermal impedance junction to case
t
fr
[µs]
T
VJ
= 150°C
100°C
25°C I
F
= 60 A
30 A
15 A
T
VJ
= 100°C
V
R
= 600 V
I
F
= 60 A
30 A
15 A
T
VJ
= 100°C
V
R
= 600 V
I
RM
Q
R
I
F
= 60 A
30 A
15 A
T
VJ
= 100°C
V
R
= 600 V T
VJ
= 100°C
I
F
= 30 A
Constants for Z
thJC
calculation:
i R
thi
(K/W) t
i
(s)
1 0.502 0.0052
2 0.193 0.0003
3 0.205 0.0162
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