SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a plastic TO-92 package, intended for low-voltage, high-current LF applications. BC368/BC369 is the matched complementary pair suitable for class-B output stages up to 3 W. QUICK REFERENCE DATA Collector-emitter voltage (Vpe = 0) Collector-emitter voltage (open base} Collector current (peak value) Total power dissipation up to Tamb = 25 OC Junction temperature DC current gain --le = 500 mA: -Vcp=1V Transition frequency at f = 100 MHz l=10mA;-Vcge=5V MECHANICAL DATA -VcES max. 25 V -VCEQ max. 20 V lem max. 2A Prot max. 1 Ww Tj max. 150 C hee 85 to 375 fy min. 40 MHz Dimensions in mm Fig. 1 TO-92. Pinning 1 = base 2 = collector : 4 3 = emitter or Y o40 b 4 min MABOA e a 4.2 max al 4 6 * | * - .2max -- cai wee eee 12.7 MIN -- =| ' ie 0.48 4 0.40 48 poy I max --_}____. a) MBCOI4d - 1 Note (1) Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. September 1994 115 BC369 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (Vge = 0) VcES max, 25 Vv Collector-emitter voltage (open base} -VcEO max, 20 V Emitter-base voltage (open collector) ~VEBO max. 5 V Collector current (DC) l max. 1A Collector current (peak value) lcm max. 2A Base current (DC) lg max. 100 mA Base current (peak value) lBM max. 200 mA Total power dissipation at Tamb = 25 C (in free air} Prot max. 0,8 W up to Tamb = 25 C* Prot max. 1 Ww Storage temperature range Tstg 65 to + 150 C Junction temperature Tj max. 150 C THERMAL RESISTANCE From junction to ambient in free air Rthj-a = 156 K/W From junction to ambient* Rthj-a = 125 K/W From junction to case Rthj-c = 60 K/W * Transistor mounted on printed-circuit board, maximum lead length 4 mm, mounting pad for collector fead min. 10 mm x 10 mm, 116 September 1994 Silicon planar epitaxial transistor BC369 CHARACTERISTICS Tj = 25 C unless otherwise specified Collector cut-off current Ie = 0; -Vcg =25V Ie = 0; Vcg = 25 V; Tj = 150 C Emitter cut-off current Ic =0;-Vegp=5V Base-emitter voltage lc =5 mA; Vcg = 10 V -lc=1A;-Vce=1V Collector-emitter saturation voltage -lc =1A;-lp = 100 mA DC current gain -lc=5mA;Vcg = 10 V I = 500 mA; -VcE=1V BC369 BC369-10 lcBo 'cBo lEBO ~VBE ~VBE ~VCEsat hFeE FE hFE BC369-25 hFE -Ic=1A;-Vce=1V Collector capacitance at f = 450 kHz lp = le =0; -Vcogp=5V Transition frequency at f = 100 MHz I = 10mA;-VcE=5 V hFe Ce fT max. 10 pA max. 1 mA max. 10 pA max. 0.7 V max. TV max. 0.5 V min. 50 85 to 375 < 160 > 160 min. 60 max. 60 pF min. 40 MHz September 1994 \17 BC369 7272780 104 2th j-a (Kaw) tye: tp T c --T- 3 10 free in air 10 ' : : 10-5 10-4 10-3 1072 10 1 10 10? 403 104 tp (s) Fig. 2. T7727 84 104 2th j-a (K/W) 103 102 10 1075 10-4 10-3 10-2 1" 1 10 10? 103 104 tp (s) 118 September 1994