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MOS FIELD EFFECT TRANSISTOR
NP82N055ELE, NP82N055KLE
NP82N055CLE, NP82N055DLE, NP82N055MLE, NP82N055NLE
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D14098EJ6V0DS00 (6th edition)
Date Published October 2007 NS
Printed in Japan The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
1999, 2000, 2007
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER LEAD PLATING PACKING PACKAGE
NP82N055ELE-E1-AY Note1, 2
NP82N055ELE-E2-AY Note1, 2
TO-263 (MP-25ZJ) typ. 1.4 g
NP82N055KLE-E1-AY Note1
NP82N055KLE-E2-AY Note1
Pure Sn (Tin) Tape 800 p/reel
TO-263 (MP-25ZK) typ. 1.5 g
NP82N055CLE-S12-AZ Note1, 2 Sn-Ag-Cu TO-220 (MP-25) typ. 1.9 g
NP82N055DLE-S12-AY Note1, 2 TO-262 (MP-25 Fin Cut) typ. 1.8 g
NP82N055MLE-S18-AY Note1 TO-220 (MP-25K) typ. 1.9 g
NP82N055NLE-S18-AY Note1
Pure Sn (Tin)
Tube 50 p/tube
TO-262 (MP-25SK) typ. 1.8 g
Notes 1. Pb-free (This product does not contain Pb in the external electrode.)
2. Not for new design
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
R
DS(on)1 = 8.4 mΩ MAX. (VGS = 10 V, ID = 41 A)
R
DS(on)2 = 11 mΩ MAX. (VGS = 5.0 V, ID = 41 A)
R
DS(on)3 = 12 mΩ MAX. (VGS = 4.5 V, ID = 41 A)
• Low input capacitance
Ciss = 4400 pF TYP.
• Built-in gate protection diode
(TO-220)
(TO-262)
(TO-263)
<R>
Data Sheet D14098EJ6V0DS
2
NP82N055ELE, NP82N055KLE, NP82N055CLE, NP82N055DLE, NP82N055MLE, NP82N055NL
E
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 55 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) (TC = 25°C) Note1 ID(DC) ±82 A
Drain Current (Pulse) Note2 ID(pulse) ±300 A
Total Power Dissipation (TC = 25°C) PT 163 W
Total Power Dissipation (TA = 25°C) PT 1.8 W
Channel Temperature Tch 175 °C
Storage Temperature Tstg −55 to +175 °C
Single Avalanche Current Note3 IAS 72/50/17 A
Single Avalanche Energy Note3 EAS 51/250/289 mJ
Notes 1. Calculated constant current according to MAX. allowable channel temperature.
2. PW ≤ 10
μ
s, Duty cycle ≤ 1%
3. Starting Tch = 25°C, VDD = 28 V, RG = 25 Ω, VGS = 20 → 0 V (see Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance Rth(ch-C) 0.92 °C/W
Channel to Ambient Thermal Resistance Rth(ch-A) 83.3 °C/W
Data Sheet D14098EJ6V0DS 3
NP82N055ELE, NP82N055KLE, NP82N055CLE, NP82N055DLE, NP82N055MLE, NP82N055NL
E
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Zero Gate Voltage Drain Current IDSS VDS = 55 V, VGS = 0 V 10
μ
A
Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10
μ
A
Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = 250
μ
A 1.5 2.0 2.5 V
Forward Transfer Admittance | yfs | VDS = 10 V, ID = 41 A 24 50 S
RDS(on)1 VGS = 10 V, ID = 41 A 6.7 8.4 mΩ
RDS(on)2 VGS = 5.0 V, ID = 41 A 7.9 11 mΩ
Drain to Source On-state Resistance
RDS(on)3 VGS = 4.5 V, ID = 41 A 8.4 12 mΩ
Input Capacitance Ciss 4400 6600 pF
Output Capacitance Coss 550 830 pF
Reverse Transfer Capacitance Crss
VDS = 25 V,
VGS = 0 V,
f = 1 MHz 270 490 pF
Turn-on Delay Time td(on) 28 61 ns
Rise Time tr 16 39 ns
Turn-off Delay Time td(off) 92 180 ns
Fall Time tf
VDD = 28 V, ID = 41 A,
VGS = 10 V,
RG = 1 Ω
18 45 ns
Total Gate Charge QG1 ID = 82 A, VDD = 44 V, VGS = 10 V 80 120 nC
QG2 45 68 nC
Gate to Source Charge QGS 15 nC
Gate to Drain Charge QGD
VDD = 44 V,
VGS = 5.0 V,
ID = 82 A 24 nC
Body Diode Forward Voltage VF(S-D) IF = 82 A, VGS = 0 V 1.0 V
Reverse Recovery Time trr 47 ns
Reverse Recovery Charge Qrr
IF = 82 A, VGS = 0 V,
di/dt = 100 A/
μ
s 66 nC
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20 → 0 V
PG.
R
G
= 25 Ω
50 Ω
D.U.T. L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T. R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50 Ω
D.U.T. R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
τ = 1 μs
Duty Cycle ≤ 1%
τ
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10% 10%
Data Sheet D14098EJ6V0DS
4
NP82N055ELE, NP82N055KLE, NP82N055CLE, NP82N055DLE, NP82N055MLE, NP82N055NL
E
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
025 50 75 100 125 150 175 200
20
40
60
80
100
T
C
- Case Temperature - °C
0
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
C
- Case Temperature - °C
P
T
- Total Power Dissipation - W
025 50 75 100 125 150 175 200
175
150
125
100
75
50
25
0
Figure.3 FORWARD BIAS SAFE OPERATING AREA
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
1
0.1
10
100
1000
1 10 100
T
C
= 25°C
Single Pulse
I
D(pulse)
R
DS(on)
Limited
(V
GS
= 10 V )
I
D(DC)
PW = 10 μs
100 μs
1 ms
0.1
DC
Power Dissipation
Limited
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting T
ch
- Starting Channel Temperature - °C
E
AS
- Single Avalanche Energy - mJ
25 50 75 100 125 150 175
350
300
250
200
150
100
50
0
50 A
72 A
51 mJ
289 mJ
250 mJ I
AS
= 17 A
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
rth(t) - Transient Thermal Resistance - °C/W
10
0.01
0.1
1
100
1000
1 m 10 m 100 m 1 10 100 1000
Single Pulse
Rth(ch-A) = 83.3°C/W
10 100
Rth(ch-C) = 0.92°C/W
μ
μ
Data Sheet D14098EJ6V0DS 5
NP82N055ELE, NP82N055KLE, NP82N055CLE, NP82N055DLE, NP82N055MLE, NP82N055NL
E
Figure6. FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
Pulsed
14
23
1000
100
10
1
0.1 56
T
A
= 175°C
150°C
75°C
25°C
−55°C
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
4
300
250
200
150
100
50
02
Pulsed
03
1
V
GS
= 10 V
5.0 V
4.5 V
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
0.01 0.1 1
10
100
10 100
0.1
0.01
1
V
DS
= 10 V
Pulsed
25°C
75°C
175°C
T
A
=
−55°C
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
0510
10
15 20
Pulsed
20
I
D
= 41 A
0
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - mΩ
10
101
20
100 1000
Pulsed
0
5.0 V
10 V
VGS = 4.5 V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - °C
VGS(th) - Gate to Source Threshold Voltage - V
0.5
VDS = VGS
ID = 250 μA
1.0
1.5
2.0
2.5
3.0
−50 0 50 100 150
0
Data Sheet D14098EJ6V0DS
6
NP82N055ELE, NP82N055KLE, NP82N055CLE, NP82N055DLE, NP82N055MLE, NP82N055NL
E
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE v
s.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - °C
R
DS(on)
- Drain to Source On-state Resistance - mΩ
−50 050 100 150
I
D
= 41 A
18
16
14
12
10
8
6
4
2
0
Pulsed
5.0 V
10 V
V
GS
= 4.5 V
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1.0
I
F
- Diode Forward Current - A
01.5
V
F(S-D)
- Source to Drain Voltage - V
0.5
Pulsed
0.1
1
10
100
1000
V
GS
= 10 V
0 V
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
100
0.1
1000
10000
100000
11010
0
V
GS
= 0 V
f = 1 MHz
C
oss
C
rss
C
iss
Figure15. SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
10.1
1
10
1000
100
10 100
t
d(on)
t
d(off)
t
f
t
r
V
DD
= 28 V
V
GS
= 10 V
R
G
= 1 Ω
Figure16. REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
I
F
- Diode Forward Current - A
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A/μs
V
GS
= 0 V
0.1 1.0 10 100
1000
100
10
1
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
10 20 40 60
80
70
60
50
40
30
20
10
003050
16
14
12
10
8
6
4
2
0
I
D
= 82 A
70 80
V
GS
V
DS
V
DD
= 44 V
28 V
11 V
Data Sheet D14098EJ6V0DS 7
NP82N055ELE, NP82N055KLE, NP82N055CLE, NP82N055DLE, NP82N055MLE, NP82N055NL
E
PACKAGE DRAWINGS (Unit: mm)
1)TO-263 (MP-25ZJ) Note 2)TO-263 (MP-25ZK)
1.4 ± 0.2
1.0 ± 0.5
2.54 TYP. 2.54 TYP.
8.5 ± 0.2
123
5.7 ± 0.4
4
4.8 MAX. 1.3 ± 0.2
0.5 ± 0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.7 ± 0.2
10 TYP.
0.5R TYP.
0.8R TYP.
2.8 ± 0.2
10.0 ± 0.3
8.0 TYP.
2.54
0.75 ± 0.2
9.15 ± 0.3
2.54 ± 0.25
15.25 ± 0.5
1.35 ± 0.3
123
4
2.5
4.45 ± 0.2
1.3 ± 0.2
0.5 ± 0.2
0 to 8
ο
1.Gate
2.Drain
3.Source
4.Fin (Drain)
No plating 7.88 MIN.
0.025 to
0.25
0.25
3)TO-220 (MP-25) Note 4)TO-262 (MP-25 Fin Cut) Note
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
12 3
10.6 MAX.
10.0 TYP. 3.6 ± 0.2
4
3.0 ± 0.3
1.3 ± 0.2
0.75 ± 0.1
2.54 TYP. 2.54 TYP.
5.9 MIN.6.0 MAX.
15.5 MAX.12.7 MIN.
1.3 ± 0.2
0.5 ± 0.2 2.8 ± 0.2
φ
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
12 3
10 TYP.
1.3 ± 0.2
0.75 ± 0.3
2.54 TYP. 2.54 TYP.
8.5 ± 0.2
12.7 MIN.
1.3 ± 0.2
0.5 ± 0.2 2.8 ± 0.2
1.0 ± 0.5
4
Note Not for new design
<R>
Data Sheet D14098EJ6V0DS
8
NP82N055ELE, NP82N055KLE, NP82N055CLE, NP82N055DLE, NP82N055MLE, NP82N055NL
E
5)TO-220 (MP-25K) 6)TO-262 (MP-25SK)
4
2.8 ± 0.3
10.0 ± 0.2 3.8 ± 0.2
φ
6.3 ± 0.3
4.45 ± 0.2
1.3 ± 0.2
0.8 ± 0.1
0.5 ± 0.2 2.5 ± 0.2
1.27 ± 0.2
3.1 ± 0.2
15.9 MAX.
123
13.7 ± 0.3
2.54 TYP. 2.54 TYP. 1.Gate
2.Drain
3.Source
4.Fin (Drain)
4123
10.0 ± 0.2 4.45 ± 0.2
1.3 ± 0.2
13.7 ± 0.3
0.8 ± 0.1
1.27 ± 0.2
0.5 ± 0.2 2.5 ± 0.2
2.54 TYP. 2.54 TYP.
1.2 ± 0.38.9 ± 0.2
10.1 ± 0.3
3.1 ± 0.3
1.Gate
2.Drain
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Data Sheet D14098EJ6V0DS 9
NP82N055ELE, NP82N055KLE, NP82N055CLE, NP82N055DLE, NP82N055MLE, NP82N055NL
E
TAPE INFORMATION
There are two types (-E1, -E2) of taping depending on the direction of the device.
Reel sideDraw-out side
MARKING INFORMATION
82N055
Lot code
NEC
LE
Pb-free plating marking
Abbreviation of part number
RECOMMENDED SOLDERING CONDITIONS
These products should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method Soldering Conditions Recommended
Condition Symbol
Infrared reflow
MP-25ZJ, MP-25ZK
Maximum temperature (Package's surface temperature): 260°C or below
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220°C: 60 seconds or less
Preheating time at 160 to 180°C: 60 to 120 seconds
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
IR60-00-3
Wave soldering
MP-25, MP-25K, MP-25SK,
MP-25 Fin Cut
Maximum temperature (Solder temperature): 260°C or below
Time: 10 seconds or less
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
THDWS
Partial heating
MP-25ZJ, MP-25ZK,
MP-25K, MP-25SK
Maximum temperature (Pin temperature): 350°C or below
Time (per side of the device): 3 seconds or less
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
P350
Partial heating
MP-25, MP-25 Fin Cut
Maximum temperature (Pin temperature): 300°C or below
Time (per side of the device): 3 seconds or less
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
P300
Caution Do not use different soldering methods together (except for partial heating).
<R>
<R>
<R>
NP82N055ELE, NP82N055KLE, NP82N055CLE, NP82N055DLE, NP82N055MLE, NP82N055NL
E
The information in this document is current as of October, 2007. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
designated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
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•
•
•
•
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M8E 02. 11-1
(1)
(2)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
"Standard":
"Special":
"Specific":
