TIP31, TIP32
High Power Bipolar Transistors
Page <1> 15/12/11 V1.1
www.element14.com
www.farnell.com
www.newark.com
Features:
•Collector - emitter sustaining voltage - VCEO (sus)
= 60 V (Minimum) - TIP31A, TIP32A
= 100 V (Minimum) - TIP31C, TIP32C
•Collector - emitter sustaining voltage - VCE (sat) = 1.2 V (Maximum) at IC= 3 A
•Current gain - bandwidth product fT= 3 MHz (Minimum) at IC= 500 mA
Dimensions : Millimetres
Dimensions Minimum Maximum
A 14.68 15.31
B 9.78 10.42
C 5.01 6.52
D 13.06 14.62
E 3.57 4.07
F 2.42 3.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
K 2.2 2.97
L 0.33 0.55
M 2.48 2.98
O 3.7 3.9
NPN PNP
TIP31A TIP32A
TIP32C TIP32C
3 Amperes
Complementary Silicon
Power Transistors
60 - 100 Volts
40 Watts
Characteristic Symbol TIP31A
TIP32A
TIP31C
TIP32C Unit
Collector - emitter voltage VCEO 60 100 V
Collector - base voltage VCBO
Emitter - base voltage VEBO 5
A
Collector current - continuous
- peak IC3
5
Base current IB1
Total power dissipation at tc = 25°C
derate above 25°C PD40
0.32
W
W/°C
Operating and storage junction temperature range TJ, TSTG -65 to +150 °C
Maximum Ratings
Characteristic Symbol Maximum Unit
Thermal resistance junction to case Rθjc 3.125 °C/W
Thermal Characteristics
Pin 1. Base
2. Collector
3. Emitter
4. Collector (Case)
TO-220
TIP31, TIP32
High Power Bipolar Transistors
Page <2> 15/12/11 V1.1
www.element14.com
www.farnell.com
www.newark.com
Characteristic Symbol Minimum Maximum Unit
OFF Characteristics
Collector - emitter sustaining voltage (1)
(IC= 30 mA, IB= 0) TIP31A, TIP32A
TIP31C, TIP32C
VCEO (SUS) 60
100
- V
Collector cut off current
(VCE = 30V, IB= 0) TIP31A, TIP32A
(VCE = 60V, IB= 0) TIP31C, TIP32C
ICEO - 0.3
mA
Collector cut off current
(VCE = 60 V, VEB = 0) TIP31A, TIP32A
(VCE = 100 V, VEB = 0) TIP31C, TIP32C
ICES - 0.2
Emitter cut off current
(VEB = 5 V, IC= 0) IEBO - 1
ON Characteristics (1)
DC current gain
(IC= 1 A, VCE = 4 V)
(IC= 3 A, VCE = 4 V)
hFE 25
15
-
50
-
Collector - emitter saturation voltage
(IC= 3 A, IB= 375 mA) VCE (sat) - 1.2
V
Base - emitter on voltage
(IC= 3 A, VCE = 4 V) VBE (on) - 1.8
Dynamic Characteristics
Current gain - bandwidth product (2)
(IC= 500 mA, VCE = 10 V, fTEST = 1 KHz) fT3 - MHz
Small - signal current gain
(IC= 500 A, VCE = 10 V, f = 1 kHz) hfe 20 - -
Electrical Characteristics (TC= 25°C Unless Otherwise Noted)
(1) Pulse Test : Pulse width ≤300 µs, duty cycle ≤2%
(2) fT= hFE• fTEST
Figure - 1 Power Derating
PD, Power Dissipation (Watts)
TC, Temperature (°C)
TIP31, TIP32
High Power Bipolar Transistors
Page <3> 15/12/11 V1.1
www.element14.com
www.farnell.com
www.newark.com
Figure - 2 Switching Time Equivalent Circuit Figure - 3 Turn-On Time
Figure - 4 DC Current Gain
t, Time (µs)
t, Time (µs)
IC, Collector Current (Amperes)
IC, Collector Current (Amperes)
IC, Collector Current (Amperes) hFE DE Current Gain
Figure - 6 Active Region Safe Operating Area
VCE, Collector Emitter Voltage (Volts)
Figure - 5 Turn-Off Time
IC, Collector Current (Amperes)
There are two limitations on the power handling ability of a
transistor: average junction temperature and second
breakdown safe operating area curves indicate IC-VCE
limits of the transistor that must be observed for reliable
operation i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure - 6 curve is based on TJ (PK) = 150°C;
TCis variable depending on power level. Second
breakdown pulse limits are valid for duty cycles to 10%
provided TJ (PK) = 150°C, At high case temperatures,
thermal limitation will reduce the power that can be
handled to values less than the limitations imposed by
second breakdown
TIP31, TIP32
High Power Bipolar Transistors
Page <4> 15/12/11 V1.1
www.element14.com
www.farnell.com
www.newark.com
Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of
it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces
all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use
made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted.
Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising)
is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. © Premier Farnell plc 2011.
Figure - 7 Collector Saturation Region
IC, Collector Current (Amperes)
IB Base Current (mA)
Figure - 9 “ON” Voltage Figure - 10 Collector Cut-off Region
Voltage (Volts)
VBE, Base Emitter Voltage (Volts)
IC, Collector Current (µA)
VCE, Reverse Volatage (Volts)
Figure - 8 Capacitances
C, Capacitance (pF)
Description Type Part Number
High Power Bipolar Transistor
NPN
TIP31A
High Power Bipolar Transistor TIP31C
High Power Bipolar Transistor
PNP
TIP32A
High Power Bipolar Transistor TIP32C
Part Number Table
VCE, Collector - Emitter Voltage (Volts)
