Z0109MA412 - NXP SEMICONDUCTORS - Datasheet.Directory

Z0109MA

4Q Triac

17 September 2018 Product data sheet

1. General description

Planar passivated sensitive gate four quadrant triac in a SOT54 (TO-92) plastic package intended

for use in applications requiring direct interfacing to logic ICs and low power gate drivers.

2. Features and benefits

•Direct interfacing to logic level ICs

•Direct interfacing to low power gate drive circuits

•High blocking voltage capability

•Planar passivated for voltage ruggedness and reliability

•Sensitive gate in four quadrants

•Triggering in all four quadrants

3. Applications

•General purpose low power motor control

•Home appliances

•Industrial process control

•Low power AC Fan controllers

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDRM repetitive peak off-

state voltage

- - 600 V

IT(RMS) RMS on-state current full sine wave; Tlead ≤ 45 °C; Fig. 1;

Fig. 2; Fig. 3

- - 1 A

full sine wave; Tj(init) = 25 °C;

tp = 20 ms; Fig. 4; Fig. 5

- - 8 AITSM non-repetitive peak on-

state current

full sine wave; Tj(init) = 25 °C;

tp = 16.7 ms

- - 8.5 A

Tjjunction temperature - - 125 °C

Static characteristics

VD = 12 V; IT = 0.1 A; T2+ G+;

Tj = 25 °C; Fig. 7

- - 10 mA

VD = 12 V; IT = 0.1 A; T2+ G-;

Tj = 25 °C; Fig. 7

- - 10 mA

IGT gate trigger current

VD = 12 V; IT = 0.1 A; T2- G-;

Tj = 25 °C; Fig. 7

- - 10 mA

WeEn Semiconductors Z0109MA

4Q Triac

Product data sheet 17 September 2018 2 / 13

Symbol Parameter Conditions Min Typ Max Unit

VD = 12 V; IT = 0.1 A; T2- G+;

Tj = 25 °C; Fig. 7

- - 10 mA

IHholding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 10 mA

VTon-state voltage IT = 1 A; Tj = 25 °C; Fig. 10 - 1.3 1.6 V

Dynamic characteristics

dVD/dt rate of rise of off-state

voltage

VDM = 402 V; Tj = 110 °C; (VDM = 67%

of VDRM); exponential waveform; gate

open circuit; Fig. 12

50 - - V/µs

dVcom/dt rate of change of

commutating voltage

VD = 400 V; Tj = 110 °C; dIcom/

dt = 0.44 A/ms; IT = 1 A; gate open

circuit

2 - - V/µs

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 T2 main terminal 2

2 G gate

3 T1 main terminal 1

123

TO-92 (SOT54)

sym051

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

Z0109MA TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54

WeEn Semiconductors Z0109MA

4Q Triac

Product data sheet 17 September 2018 3 / 13

7. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDRM repetitive peak off-state

voltage

- 600 V

IT(RMS) RMS on-state current full sine wave; Tlead ≤ 45 °C; Fig. 1; Fig. 2;

Fig. 3

- 1 A

full sine wave; Tj(init) = 25 °C; tp = 20 ms;

Fig. 4; Fig. 5

- 8 AITSM non-repetitive peak on-

state current

full sine wave; Tj(init) = 25 °C; tp = 16.7 ms - 8.5 A

I2t I2t for fusing tp = 10 ms; SIN - 0.32 A²s

- 50 A/µs

-50 A/µs

dIT/dt rate of rise of on-state

current

IG = 20 mA; T2+ G+

-20 A/µs

IGM peak gate current - 1 A

PGM peak gate power - 2 W

PG(AV) average gate power over any 20 ms period - 0.1 W

Tstg storage temperature -40 150 °C

Tjjunction temperature - 125 °C

003aac264

-50

0 1

(

)

(

)

(

)

Fig. 1. RMS on-state current as a function of lead

temperature; maximum values

f977

-2

-1

surge

(

)

(

)

(

)

f = 50 Hz; Tlead = 45 °C

Fig. 2. RMS on-state current as a function of surge

duration; maximum values

IG = 20 mA; T2+ G-

IG = 20 mA; T2- G-

IG = 20 mA; T2- G+

WeEn Semiconductors Z0109MA

4Q Triac

Product data sheet 17 September 2018 4 / 13

003aac259

(

)

(

)

(

)

conduction

angle,

(degrees)

form

factor

120

180

2.816

1.967

1.570

1.329

1.110

α = conduction angle

a = form factor = IT(RMS) / IT(AV)

Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values

(

)

TSM

j(init)

= 25

C max

1/f

f = 50 Hz

Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum

values

WeEn Semiconductors Z0109MA

4Q Triac

Product data sheet 17 September 2018 5 / 13

(

)

(

)

(

)

TSM

j(init)

= 25

C max

tp ≤ 20 ms

(1) dIT/dt limit

(2) T2- G+ quadrant limit

Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values

WeEn Semiconductors Z0109MA

4Q Triac

Product data sheet 17 September 2018 6 / 13

8. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-lead) thermal resistance

from junction to lead

full cycle; Fig. 6 - - 60 K/W

Rth(j-a) thermal resistance

from junction to

ambient free air

full cycle; printed-circuit board

mounted; lead length = 4 mm

- 150 - K/W

10-1

10-2

Zth(j-lead)

(K/W)

tp (s)

10-5 1 10

10-1

10-2

10-4 10-3

102003aac206

Fig. 6. Transient thermal impedance from junction to lead as a function of pulse width

WeEn Semiconductors Z0109MA

4Q Triac

Product data sheet 17 September 2018 7 / 13

9. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

VD = 12 V; IT = 0.1 A; T2+ G+;

Tj = 25 °C; Fig. 7

- - 10 mA

VD = 12 V; IT = 0.1 A; T2+ G-;

Tj = 25 °C; Fig. 7

- - 10 mA

VD = 12 V; IT = 0.1 A; T2- G-;

Tj = 25 °C; Fig. 7

- - 10 mA

IGT gate trigger current

VD = 12 V; IT = 0.1 A; T2- G+;

Tj = 25 °C; Fig. 7

- - 10 mA

VD = 12 V; IG = 0.1 A; T2+ G+;

Tj = 25 °C; Fig. 8

- - 15 mA

VD = 12 V; IG = 0.1 A; T2+ G-;

Tj = 25 °C; Fig. 8

- - 25 mA

VD = 12 V; IG = 0.1 A; T2- G-;

Tj = 25 °C; Fig. 8

- - 15 mA

ILlatching current

VD = 12 V; IG = 0.1 A; T2- G+;

Tj = 25 °C; Fig. 8

- - 15 mA

IHholding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 10 mA

VTon-state voltage IT = 1 A; Tj = 25 °C; Fig. 10 - 1.3 1.6 V

VD = 12 V; IT = 0.1 A; Tj = 25 °C - - 1 VVGT gate trigger voltage

VD = 600 V; IT = 0.1 A; Tj = 125 °C;

Fig. 11

0.2 - - V

IDoff-state current VD = 600 V; Tj = 125 °C - - 0.5 mA

Dynamic characteristics

dVD/dt rate of rise of off-state

voltage

VDM = 402 V; Tj = 110 °C; (VDM = 67%

of VDRM); exponential waveform; gate

open circuit; Fig. 12

50 - - V/µs

dVcom/dt rate of change of

commutating voltage

VD = 400 V; Tj = 110 °C; dIcom/

dt = 0.44 A/ms; IT = 1 A; gate open

circuit

2 - - V/µs

WeEn Semiconductors Z0109MA

4Q Triac

Product data sheet 17 September 2018 8 / 13

Tj(°C)

-50 1501000 50

003aaa205

IGT(25°C)

IGT

(1)

(2)

(3)

(4)

(1) T2- G+

(2) T2- G-

(3) T2+ G-

(4) T2+ G+

Fig. 7. Normalized gate trigger current as a function of

junction temperature

Tj(°C)

-50 1501000 50

003aaa203

IL(25°C)

Fig. 8. Normalized latching current as a function of

junction temperature

Tj(°C)

-50 1501000 50

003aaa204

IH(25°C)

Fig. 9. Normalized holding current as a function of

junction temperature

003aac258

0.4

0.8

1.2

1.6

0 0.4 0.8 1.2 1.6 2

(V)

(A)

(1) (2) (3)

Vo = 1.13 V

Rs = 0.31 Ω

(1) Tj = 125 °C; typical values

(2) Tj = 125 °C; maximum values

(3) Tj = 25 °C; maximum values

Fig. 10. On-state current as a function of on-state

voltage

WeEn Semiconductors Z0109MA

4Q Triac

Product data sheet 17 September 2018 9 / 13

Tj (°C)

-50 1501000 50

003aaa209

0.8

0.4

1.2

1.6

VGT(25°C)

VGT

Fig. 11. Normalized gate trigger voltage as a function of

junction temperature

1.6

1.2

0.8

0.4

0 50 100 150

Tj(°C)

003aaa208

Fig. 12. Normalized critical rate of rise of off-state

voltage as a function of junction temperature; typical

values

WeEn Semiconductors Z0109MA

4Q Triac

Product data sheet 17 September 2018 10 / 13

10. Package outline

Fig. 13. Package outline TO-92 (SOT54)

WeEn Semiconductors Z0109MA

4Q Triac

Product data sheet 17 September 2018 11 / 13

11. Legal information

Data sheet status

Document

status [1][2]

Product

status [3]

Definition

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Product

[short] data

sheet

Production This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.ween-semi.com.

Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. WeEn Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences

of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is

intended for quick reference only and should not be relied upon to contain

detailed and full information. For detailed and full information see the

relevant full data sheet, which is available on request via the local WeEn

Semiconductors sales office. In case of any inconsistency or conflict with the

short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

WeEn Semiconductors and its customer, unless WeEn Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the WeEn Semiconductors product

is deemed to offer functions and qualities beyond those described in the

Product data sheet.

Disclaimers

Limited warranty and liability — Information in this document is believed

to be accurate and reliable. However, WeEn Semiconductors does not

give any representations or warranties, expressed or implied, as to the

accuracy or completeness of such information and shall have no liability for

the consequences of use of such information. WeEn Semiconductors takes

no responsibility for the content in this document if provided by an information

source outside of WeEn Semiconductors.

In no event shall WeEn Semiconductors be liable for any indirect, incidental,

punitive, special or consequential damages (including - without limitation -

lost profits, lost savings, business interruption, costs related to the removal

or replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, WeEn Semiconductors’ aggregate and cumulative liability

towards customer for the products described herein shall be limited in

accordance with the Terms and conditions of commercial sale of WeEn

Semiconductors.

Right to make changes — WeEn Semiconductors reserves the right to

make changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Suitability for use — WeEn Semiconductors products are not designed,

authorized or warranted to be suitable for use in life support, life-critical

or safety-critical systems or equipment, nor in applications where failure

or malfunction of an WeEn Semiconductors product can reasonably

be expected to result in personal injury, death or severe property or

environmental damage. WeEn Semiconductors and its suppliers accept no

liability for inclusion and/or use of WeEn Semiconductors products in such

equipment or applications and therefore such inclusion and/or use is at the

customer’s own risk.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. WeEn Semiconductors makes

no representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and operation of their applications

and products using WeEn Semiconductors products, and WeEn

Semiconductors accepts no liability for any assistance with applications or

customer product design. It is customer’s sole responsibility to determine

whether the WeEn Semiconductors product is suitable and fit for the

customer’s applications and products planned, as well as for the planned

application and use of customer’s third party customer(s). Customers should

provide appropriate design and operating safeguards to minimize the risks

associated with their applications and products.

WeEn Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default

in the customer’s applications or products, or the application or use by

customer’s third party customer(s). Customer is responsible for doing all

necessary testing for the customer’s applications and products using WeEn

Semiconductors products in order to avoid a default of the applications

and the products or of the application or use by customer’s third party

customer(s). WeEn does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific WeEn Semiconductors product is automotive

qualified, the product is not suitable for automotive use. It is neither qualified

nor tested in accordance with automotive testing or application requirements.

WeEn Semiconductors accepts no liability for inclusion and/or use of non-

automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards,

customer (a) shall use the product without WeEn Semiconductors’ warranty

of the product for such automotive applications, use and specifications, and

(b) whenever customer uses the product for automotive applications beyond

WeEn Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies WeEn Semiconductors for

any liability, damages or failed product claims resulting from customer

design and use of the product for automotive applications beyond WeEn

Semiconductors’ standard warranty and WeEn Semiconductors’ product

specifications.

WeEn Semiconductors Z0109MA

4Q Triac

Product data sheet 17 September 2018 12 / 13

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

Trademarks

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

WeEn Semiconductors Z0109MA

4Q Triac

Product data sheet 17 September 2018 13 / 13

12. Contents

1. General description......................................................1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Quick reference data....................................................1

5. Pinning information......................................................2

6. Ordering information....................................................2

7. Limiting values............................................................. 3

8. Thermal characteristics............................................... 6

9. Characteristics.............................................................. 7

10. Package outline........................................................ 10

11. Legal information..................................................... 11

For more information, please visit: http://www.ween-semi.com

For sales office addresses, please send an email to: salesaddresses@ween-semi.com

Date of release: 17 September 2018