T4-LDS-0305, Rev. 1 (7/30/13) ©2013 Microsemi Corporation Page 1 of 6
2N5415 – 2N5416
Compliant
PNP Silicon Low-Power Transistor
Qualified per MIL-PRF-19500/485
Qualified Levels:
JAN, JANT X, JANTXV
and JANS
DESCRIPTION
This family of 2N5415 and 2N5416 epitaxial planar transistors are military qualified up to a
JANS level for high-reliabil it y applic at ions. These devices are also available in TO-39 and low
profile U4 and UA packaging.
TO-5 Package
Also available in:
TO-205AD (TO-39)
package
(short-leaded)
2N5415S – 2N5416S
U4 package
(surface mount)
2N5415U4 – 2N5416U4
UA package
(surface mount)
2N5415UA – 2N5416UA
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N5415 through 2N5416 series
• JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/485.
(See part nomenclature for all available options.)
• RoHS compliant
APPLICATIONS / BENEFITS
• General purpo se tr an si stors for low power applications requiring high frequency switching.
• Low pac k age profile
• Military and other high-reli ability applications
MAXIMUM RATINGS @ TA = +25 ºC unless otherwise noted
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters / Test Conditions Symbol 2N5415 2N5416 Unit
Collector-Emitter Voltage VCEO 200 300 V
Collector-Base Voltage VCBO 200 350 V
Emitter-Base Voltage VEBO 6.0 6.0 V
Collector Current IC 1.0 1.0 A
Operating & Storage Junction Temperature Range
TJ, Tstg
-65 to +200
°C
Thermal Resi stan ce Jun cti on-to-Ambient RӨJA 234
o
C/W
Thermal Resi stan ce Jun cti on-to-Case RӨJC 17.5
o
C/W
Total Power Dissipation
@ TA = +2 5 °C (1)
@ TC = +25 °C (2) PT 0.75
10 W
Notes: 1. Derate linearly 4.29 mW/°C for TA > +25 °C
2. Derate linearly 57.2 mW/°C for TC > +25 °C
T4-LDS-0305, Rev. 1 (7/30/13) ©2013 Microsemi Corporation Page 2 of 6
2N5415 – 2N5416
MECHANICAL and PACKAGING
• CASE: Hermetically sealed, kovar base, nickel cap
• TERMINALS: Leads are gold plated kovar (Solder dip (Sn63/Pb37) is available upon special request. NOTE: Solder dipping will
eliminate RoHS compliance.)
• MARKING: Part number, date code, manufacturer’s ID
• POLARITY: NPN
• WEIGHT: Approximately 1.14 grams
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 2N5415
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
SYMBOLS & DEFINITIONS
Symbol
Definition
Cobo
Common-base open-circuit output capacitance
ICEO
Collector cutoff current, base open
ICEX
Collector c ut of f cur rent, circuit bet ween bas e and emitter
IEBO
Emitter cutoff current, collector open
hFE
Common-emitter static forward current transfer ratio
VCEO
Collector-emitter voltage, base open
VCBO
Collector-emitter voltage, emitter open
VEBO
Emitter-base voltage, collector open
T4-LDS-0305, Rev. 1 (7/30/13) ©2013 Microsemi Corporation Page 3 of 6
2N5415 – 2N5416
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted
OFF CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Collector-Emitter Breakdown Voltage
V(BR)CEO
200
300
V
I
C
= 50 mA, I
B
= 5 mA,
L = 25 mH; f = 30 – 60 H z
2N5415
2N5416
Emitter-Base Cutoff Current
VEB = 6.0 V
IEBO 20 µA
Collector-Emitter Cutoff Current
ICEX 50 µA
V
CE
= 200 V, V
BE
= 1.5 V
VCE = 300 V, VBE = 1.5 V
2N5415
2N5416
Collector-Emitter Cutoff Current
ICEO1 50 µA
V
CE
= 150 V
VCE = 250 V
2N5415
2N5416
Collector-Emitter Cutoff Current
ICEO2 1 mA
V
CE
= 200 V
VCE = 300 V
2N5415
2N5416
Collector-Base Cutoff Current
ICBO1 50 µA
V
CB
= 175 V
VCB = 280 V
2N5415
2N5416
V
CB
= 200 V
VCB = 350 V
2N5415
2N5416
ICBO2 500 µA
V
CB
= 175 V, T
A
= +150 ºC
VCB = 280 V, TA = +150 ºC
2N5415
2N5416
ICBO3 1 mA
ON CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Forward-Current Transfer Ratio
IC = 50 mA, VCE = 10 V
IC = 1 mA, VCE = 10 V
I
C
= 50 mA, V
CE
= 10 V, T
A
= +150 ºC
hFE
30
15
15
120
Collector-Emitter Saturation Voltage
IC = 50 mA, IB = 5 mA
VCE(sat) 2.0 V
Base-Emitter Voltage Non-Saturation
IC = 50 mA, VCE = 10 V
VBE 1.5 V
DYNAMIC CHA RACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Magnitude of Common Emitter Small-Signal Short-
|hfe| 3 15
Circuit Forward Current Transfer Ratio
I
C
= 10 mA, V
CE
= 10 V, f = 5 MHz
Small-signal short Circuit Forward-Current
hfe
25
Transfer Ratio
I
C
= 5 mA, V
CE
= 10 V, f ≤ 1 kHz
Output Capac ita nc e
VCB = 10 V, IE = 0, 100 kHz ≤ f ≤ 1 MHz
Cobo 15 pF
T4-LDS-0305, Rev. 1 (7/30/13) ©2013 Microsemi Corporation Page 4 of 6
2N5415 – 2N5416
ELECTRICAL CHARACTERISTICS @ TA = +25 °C unless otherwise noted. (continued)
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Turn-On Time
VCC = 200 V, IC = 50 mA, IB1 = 5 mA
ton
1 µs
Turn-Off Time
VCC = 200 V, IC = 50 mA, IB1 = IB2 = 5 mA
toff
10 µs
SAFE OPERATING AREA
(See SOA graph below and MIL-STD-750, method 3053)
DC Tests
TC = +25 °C, tP = 0.4 s, 1 Cycle
Test 1
VCE = 10 V, IC = 1 A
Test 2
VCE = 100 V, IC = 100 mA
Test 3
VCE = 200 V, IC = 24 mA (2N5415 only)
Test 4
VCE = 300 V, IC = 10 mA (2N5416 only)
VCE – COLLECTOR – EMITTER VOLTAGE – V
Maximum Safe Operating Area (TJ = 200 ºC)
I
C
– COLLECTOR CURRE NT - A
T4-LDS-0305, Rev. 1 (7/30/13) ©2013 Microsemi Corporation Page 5 of 6
2N5415 – 2N5416
GRAPHS
Time (s)
FIGURE 1
Thermal impedance graph ( RӨJA)
Time (s)
FIGURE 2
Thermal impedance graph (RӨJA)
Theta (oC/W)
Theta (oC/W)
T4-LDS-0305, Rev. 1 (7/30/13) ©2013 Microsemi Corporation Page 6 of 6
2N5415 – 2N5416
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for information only.
3. Symbol TL is measured from HD maximum.
4. Details of outline in this zone are optional.
5. Symbol CD shall not vary more than 0.010 (0.25 mm) in zone P. This zone is controlled for automatic handling.
6. Leads at gauge plane 0.054 inch (1.37 mm) +0.001 inch (0.03 mm) -0.000 inch (0.00 mm) below seating plane shall
be within 0.007 inch (0.18 mm) radius of true position (TP) relative to tab. Device may be measured by direct
methods or by gauge.
7. Symbol LD applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Lead diameter shall not
exceed 0.042 inch (1.07 mm) within L1 and beyond LL minimum.
8. Lead designation, shall be as follows: 1 - emitter, 2 - base, 3 - collector.
9. Lead number thr ee is electr i ca lly connected t o case.
10. Beyond r maximum, TW shall be held for a minimum length of 0.011 inch (0.28 mm).
11. Symbol r applied to both inside corners of tab.
12. For transi stor t y pes 2N5415 and 2N5416, dimension LL sha l l be 1.5 inches (38.1 mm) minimum and 1.75 inch (44.4
mm) max i mum.
13. All three leads.
14. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
Dimensions
Symbol
Inch
Millimeters
Note
Min
Max
Min
Max
CD
0.305
0.335
7.75
8.51
CH
0.240
0.260
6.10
6.60
HD
0.335
0.370
8.51
9.40
LC
0.200 TP
5.08 TP
6
LD
0.016
0.021
0.41
0.53
7
LL
See notes 7, 12 and 13
LU
0.016
0.019
0.41
0.48
7, 13
L1
-
0.050
-
1.27
13
L2
0.250
-
6.35
-
13
P
0.100
-
2.54
-
5
Q
-
0.050
-
1.27
4
TL
0.029
0.045
0.74
1.14
3
TW
0.028
0.034
0.71
0.86
10, 11
r
-
0.010
-
0.25
11
α
45° TP
45° TP
6
