2N5415 - 2N5416 Qualified Levels: JAN, JANTX, JANTXV and JANS PNP Silicon Low-Power Transistor Compliant Qualified per MIL-PRF-19500/485 DESCRIPTION This family of 2N5415 and 2N5416 epitaxial planar transistors are military qualified up to a JANS level for high-reliability applications. These devices are also available in TO-39 and low profile U4 and UA packaging. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * JEDEC registered 2N5415 through 2N5416 series * JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/485. TO-5 Package (See part nomenclature for all available options.) * RoHS compliant Also available in: TO-205AD (TO-39) package (short-leaded) 2N5415S - 2N5416S APPLICATIONS / BENEFITS * * * General purpose transistors for low power applications requiring high frequency switching. Low package profile Military and other high-reliability applications U4 package (surface mount) 2N5415U4 - 2N5416U4 UA package (surface mount) 2N5415UA - 2N5416UA MAXIMUM RATINGS @ T A = +25 C unless otherwise noted Parameters / Test Conditions Symbol 2N5415 2N5416 Unit Collector-Emitter Voltage V CEO 200 300 V Collector-Base Voltage V CBO 200 350 V Emitter-Base Voltage V EBO 6.0 6.0 V IC 1.0 1.0 A Collector Current Operating & Storage Junction Temperature Range T J , T stg -65 to +200 Thermal Resistance Junction-to-Ambient R JA 234 o C/W Thermal Resistance Junction-to-Case R JC 17.5 o C/W PT 0.75 10 Total Power Dissipation (1) @ T A = +25 C (2) @ T C = +25 C Notes: 1. Derate linearly 4.29 mW/C for TA > +25 C 2. Derate linearly 57.2 mW/C for T C > +25 C C W MSC - Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC - Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0305, Rev. 1 (7/30/13) (c)2013 Microsemi Corporation Page 1 of 6 2N5415 - 2N5416 MECHANICAL and PACKAGING * * * * * * CASE: Hermetically sealed, kovar base, nickel cap TERMINALS: Leads are gold plated kovar (Solder dip (Sn63/Pb37) is available upon special request. NOTE: Solder dipping will eliminate RoHS compliance.) MARKING: Part number, date code, manufacturer's ID POLARITY: NPN WEIGHT: Approximately 1.14 grams See Package Dimensions on last page. PART NOMENCLATURE JAN 2N5415 Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level JANS = JANS level Blank = Commercial Symbol C obo I CEO I CEX I EBO h FE V CEO V CBO V EBO JEDEC type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Definition Common-base open-circuit output capacitance Collector cutoff current, base open Collector cutoff current, circuit between base and emitter Emitter cutoff current, collector open Common-emitter static forward current transfer ratio Collector-emitter voltage, base open Collector-emitter voltage, emitter open Emitter-base voltage, collector open T4-LDS-0305, Rev. 1 (7/30/13) (c)2013 Microsemi Corporation Page 2 of 6 2N5415 - 2N5416 ELECTRICAL CHARACTERISTICS @ T A = +25 C, unless otherwise noted OFF CHARACTERISTICS Parameters / Test Conditions Collector-Emitter Breakdown Voltage I C = 50 mA, I B = 5 mA, L = 25 mH; f = 30 - 60 Hz Emitter-Base Cutoff Current V EB = 6.0 V Collector-Emitter Cutoff Current V CE = 200 V, V BE = 1.5 V V CE = 300 V, V BE = 1.5 V Collector-Emitter Cutoff Current V CE = 150 V V CE = 250 V Collector-Emitter Cutoff Current V CE = 200 V V CE = 300 V Collector-Base Cutoff Current V CB = 175 V V CB = 280 V V CB = 200 V V CB = 350 V V CB = 175 V, T A = +150 C V CB = 280 V, T A = +150 C 2N5415 2N5416 Symbol Min. V (BR)CEO 200 300 Max. Unit V I EBO 20 A 2N5415 2N5416 I CEX 50 A 2N5415 2N5416 I CEO1 50 A 2N5415 2N5416 I CEO2 1 mA 2N5415 2N5416 2N5415 2N5416 2N5415 2N5416 I CBO1 50 A I CBO2 500 A I CBO3 1 mA Min. Max. Unit 30 15 15 120 ON CHARACTERISTICS Parameters / Test Conditions Forward-Current Transfer Ratio I C = 50 mA, V CE = 10 V I C = 1 mA, V CE = 10 V I C = 50 mA, V CE = 10 V, T A = +150 C Collector-Emitter Saturation Voltage I C = 50 mA, I B = 5 mA Base-Emitter Voltage Non-Saturation I C = 50 mA, V CE = 10 V Symbol h FE V CE(sat) 2.0 V V BE 1.5 V Unit DYNAMIC CHARACTERISTICS Parameters / Test Conditions Magnitude of Common Emitter Small-Signal ShortCircuit Forward Current Transfer Ratio I C = 10 mA, V CE = 10 V, f = 5 MHz Small-signal short Circuit Forward-Current Transfer Ratio I C = 5 mA, V CE = 10 V, f 1 kHz Output Capacitance V CB = 10 V, I E = 0, 100 kHz f 1 MHz T4-LDS-0305, Rev. 1 (7/30/13) Symbol Min. Max. |h fe | 3 15 h fe 25 C obo (c)2013 Microsemi Corporation 15 pF Page 3 of 6 2N5415 - 2N5416 ELECTRICAL CHARACTERISTICS @ T A = +25 C unless otherwise noted. (continued) SWITCHING CHARACTERISTICS Parameters / Test Conditions Turn-On Time V CC = 200 V, I C = 50 mA, I B1 = 5 mA Turn-Off Time V CC = 200 V, I C = 50 mA, I B1 = I B2 = 5 mA Symbol Min. Max. Unit t on 1 s t off 10 s IC - COLLECTOR CURRENT - A SAFE OPERATING AREA (See SOA graph below and MIL-STD-750, method 3053) DC Tests T C = +25 C, t P = 0.4 s, 1 Cycle Test 1 V CE = 10 V, I C = 1 A Test 2 V CE = 100 V, I C = 100 mA Test 3 V CE = 200 V, I C = 24 mA (2N5415 only) Test 4 V CE = 300 V, I C = 10 mA (2N5416 only) V CE - COLLECTOR - EMITTER VOLTAGE - V Maximum Safe Operating Area (T J = 200 C) T4-LDS-0305, Rev. 1 (7/30/13) (c)2013 Microsemi Corporation Page 4 of 6 2N5415 - 2N5416 o Theta ( C/W) GRAPHS Time (s) o Theta ( C/W) FIGURE 1 Thermal impedance graph (R JA ) Time (s) FIGURE 2 Thermal impedance graph (R JA ) T4-LDS-0305, Rev. 1 (7/30/13) (c)2013 Microsemi Corporation Page 5 of 6 2N5415 - 2N5416 PACKAGE DIMENSIONS CD Min 0.305 Dimensions Millimeters Max Min Max 0.335 7.75 8.51 CH 0.240 0.260 6.10 6.60 HD 0.335 0.370 8.51 9.40 Symbol Inch LC LD 0.200 TP 0.016 LL 0.021 5.08 TP 0.41 Note 6 0.53 7 See notes 7, 12 and 13 LU 0.016 0.019 0.41 0.48 7, 13 L1 L2 0.250 0.050 - 6.35 1.27 - 13 13 P 2.54 - 5 4 0.100 - Q - 0.050 - 1.27 TL 0.029 0.045 0.74 1.14 3 TW 0.028 0.034 0.71 0.86 10, 11 r - 0.010 - 0.25 11 45 TP 45 TP 6 NOTES: 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. Dimensions are in inches. Millimeters are given for information only. Symbol TL is measured from HD maximum. Details of outline in this zone are optional. Symbol CD shall not vary more than 0.010 (0.25 mm) in zone P. This zone is controlled for automatic handling. Leads at gauge plane 0.054 inch (1.37 mm) +0.001 inch (0.03 mm) -0.000 inch (0.00 mm) below seating plane shall be within 0.007 inch (0.18 mm) radius of true position (TP) relative to tab. Device may be measured by direct methods or by gauge. Symbol LD applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Lead diameter shall not exceed 0.042 inch (1.07 mm) within L1 and beyond LL minimum. Lead designation, shall be as follows: 1 - emitter, 2 - base, 3 - collector. Lead number three is electrically connected to case. Beyond r maximum, TW shall be held for a minimum length of 0.011 inch (0.28 mm). Symbol r applied to both inside corners of tab. For transistor types 2N5415 and 2N5416, dimension LL shall be 1.5 inches (38.1 mm) minimum and 1.75 inch (44.4 mm) maximum. All three leads. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. T4-LDS-0305, Rev. 1 (7/30/13) (c)2013 Microsemi Corporation Page 6 of 6