1165910 Silicon power transistors. The MJ15024 powerbase power transistors designed for high power audio, disk head positioners and other linear applications. Features: * * * (TO-3) High safe operating area (100% tested) - 2A at 80V. High DC current gain - hFE = 15 (minimum) at IC = 8A dc. Pb-free packages. Dimensions A Maximum 1.550 (39.37) Reference B - 1.050 (26.67) C 0.250 (6.35) 0.335 (8.51) D 0.038 (0.97) 0.043 (1.09) E 0.055 (1.40) 0.070 (1.77) G 0.430 (10.92) BSC H 0.215 (5.46) BSC K Style 1: Pin 1. Base 2. Emitter Collector (Case) Minimum L 0.440 (11.18) 0.665 (16.89) BSC - 0.830 (21.08) Q 0.151 (3.84) 0.165 (4.19) V (TO-3) Case 1-07 Style 1 0.480 (12.19) N U 16 Amperes Silicon Power Transistors 200 - 250 Volts, 250 Watts 1.187 (30.15) BSC 0.131 (3.33) 0.188 (4.77) Dimensions : Inches (Millimetres) http://www.farnell.com http://www.newark.com http://www.cpc.co.uk Page <1> 22/10/08 V1.1 1165910 Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage MJ15024 VCEO 250 Collector-Base Voltage MJ15024 VCBO 400 Emitter-Base Voltage VEBO 5 Collector - Emitter Voltage VCEX 400 Collector Current - Continuous - Peak (Note 1) IC 16 30 Base Current - Continuous IB 5 Total Device Dissipation at TC = 25C Derate above 25C PD 250 1.43 W W/C TJ, Tstg -65 to +200 C Symbol Maximum Unit RJC 0.70 C/W V dc Operating and Storage Junction Temperature Range A dc Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Case Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse test: pulse width = 5ms, duty cycle 10%. Electrical Characteristics (TC = 25C unless otherwise noted) Characteristic Symbol Minimum Maximum Unit - Off Characteristics Collector-Emitter Sustaining Voltage (Note 2) (lC = 100mA dc, lB = 0) MJ15024 VEO (sus) 250 - Collector Cut off Current (VCE = 250V dc, VBE (off) = 1.5V dc) MJ15024 ICEX - 250 Collector Cut off Current (VCE = 200V dc, IB = 0) MJ15024 ICEO - Emitter Cut off Current (VCE = 5V dc IB = 0 ) A dc 500 IEBO - IS/b 5 2 Second Breakdown Second Breakdown Collector Current with Base Forward Biased (VCE = 50V dc, t = 0.5s (Non-repetitive)) (VCE = 80V dc, t = 0.5s (non-repetitive)) - A dc http://www.farnell.com http://www.newark.com http://www.cpc.co.uk Page <2> 22/10/08 V1.1 1165910 Electrical Characteristics (TC = 25C unless otherwise noted) Characteristic Symbol Minimum Maximum Unit hFE 15 5 60 - - Collector-Emitter Saturation Voltage (lC = 8A dc, IB = 0.8A dc) (lC = 16A dc, IB = 3.2A dc) VCE (sat) - 1.4 4.0 Base-Emitter On Voltage (lC = 8A dc, VCE = 4V dc) VBE (on) - 2.2 fT 4 - MHz Cob - 500 pF On Characteristic DC Current Gain (lC = 8A dc, VCE = 4V dc) (lC = 16A dc, VCE = 4V dc) V dc Dynamic Characteristics Current-Gain - Bandwidth Product (lC = 1A dc, VCE = 10V dc, ftest = 1MHz) Output Capacitance (VCB = 10V dc, IE = 0, ftest = 1MHz) 2. Pulse Test : Pulse Width = 300s, Duty Cycle 2%. Active - Region Safe Operating Area IC, Collector Current (Amperes) There are two limitation on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data is based on TJ (PK) = 200C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be handled to values Ion than the limitations imposed by second breakdown. VCE, Collector-Emitter Voltage (Volts) http://www.farnell.com http://www.newark.com http://www.cpc.co.uk Page <3> 22/10/08 V1.1 1165910 Typical Characteristics Capacitances C, Capacitance (pF) fT, Current-Gain - Bandwidth Product (MHz) Current-Gain - Bandwidth Product VR, Reverse Voltage (Volts) IC, Collector Current (Amperes) DC Current Gain V, Voltage (Volts) hFE, DC Current Gain "On" Voltage IC, Collector Current (Amperes) IC, Collector Current (Amperes) Collector Saturation Region Description Part Number Transistor, NPN, TO-3 MJ15024 VCE, Collector-Emitter Voltage (Volts) Part Number Table IB, Base Current (Amperes) Disclaimer This data sheet and its contents (the "Information") belong to the Premier Farnell Group (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. SPC Multicomp is the registered trademark of the Group. 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