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Silicon power transistors.
The MJ15024 powerbase power transistors designed for high power audio, disk
head positioners and other linear applications.
Features:
•High safe operating area (100% tested) - 2A at 80V.
•High DC current gain - hFE = 15 (minimum) at IC= 8A dc.
•Pb-free packages.
(TO-3)
Style 1:
Pin 1. Base
2. Emitter
Collector (Case)
16 Amperes
Silicon Power Transistors
200 - 250 Volts, 250 Watts
(TO-3)
Case 1-07
Style 1
Dimensions Minimum Maximum
A1.550 (39.37) Reference
B - 1.050 (26.67)
C 0.250 (6.35) 0.335 (8.51)
D0.038 (0.97) 0.043 (1.09)
E0.055 (1.40) 0.070 (1.77)
G0.430 (10.92) BSC
H0.215 (5.46) BSC
K0.440 (11.18) 0.480 (12.19)
L0.665 (16.89) BSC
N - 0.830 (21.08)
Q0.151 (3.84) 0.165 (4.19)
U1.187 (30.15) BSC
V0.131 (3.33) 0.188 (4.77)
Dimensions : Inches (Millimetres)
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Rating Symbol Value Unit
Collector-Emitter Voltage MJ15024 VCEO 250
V dc
Collector-Base Voltage MJ15024 VCBO 400
Emitter-Base Voltage VEBO 5
Collector - Emitter Voltage VCEX 400
Collector Current - Continuous
- Peak (Note 1) IC
16
30 Adc
Base Current - Continuous IB5
Total Device Dissipation at TC= 25°C
Derate above 25°C PD250
1.43
W
W/°C
Operating and Storage Junction Temperature Range TJ, Tstg -65 to +200 °C
Maximum Ratings
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual
stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional
operation is not implied, damage may occur and reliability may be affected.
1. Pulse test: pulse width = 5ms, duty cycle ≤10%.
Characteristics Symbol Maximum Unit
Thermal Resistance, Junction-to-Case RθJC 0.70 °C/W
Thermal Characteristics
Electrical Characteristics (TC= 25°C unless otherwise noted)
Characteristic Symbol Minimum Maximum Unit
Off Characteristics
Collector-Emitter Sustaining Voltage (Note 2)
(lC = 100mA dc, lB= 0) MJ15024 VEO (sus) 250 - -
Collector Cut off Current
(VCE = 250V dc, VBE (off) = 1.5V dc) MJ15024 ICEX - 250
µAdc
Collector Cut off Current
(VCE = 200V dc, IB = 0) MJ15024 ICEO -
500
Emitter Cut off Current
(VCE = 5V dc IB= 0 ) IEBO -
Second Breakdown
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50V dc, t = 0.5s (Non-repetitive))
(VCE = 80V dc, t = 0.5s (non-repetitive))
IS/b 5
2
-Adc
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Electrical Characteristics (TC= 25°C unless otherwise noted)
Characteristic Symbol Minimum Maximum Unit
On Characteristic
DC Current Gain
(lC= 8A dc, VCE = 4V dc)
(lC= 16A dc, VCE = 4V dc)
hFE 15
5
60
-
-
Collector-Emitter Saturation Voltage
(lC= 8A dc, IB= 0.8A dc)
(lC= 16A dc, IB= 3.2A dc)
VCE (sat) - 1.4
4.0 V dc
Base-Emitter On Voltage
(lC= 8A dc, VCE = 4V dc) VBE (on) - 2.2
Dynamic Characteristics
Current-Gain - Bandwidth Product
(lC= 1A dc, VCE = 10V dc, ftest = 1MHz) fT4 - MHz
Output Capacitance
(VCB = 10V dc, IE= 0, ftest = 1MHz) Cob - 500 pF
2. Pulse Test : Pulse Width = 300µs, Duty Cycle ≤2%.
VCE, Collector-Emitter Voltage (Volts)
Active - Region Safe Operating Area
IC, Collector Current (Amperes)
There are two limitation on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate IC - VCE limits of the transistor
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than curves indicate.
The data is based on TJ (PK) = 200°C; TCis variable depending on
conditions. At high case temperatures, thermal limitations will
reduce the power that can be handled to values Ion than the
limitations imposed by second breakdown.
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Typical Characteristics
C, Capacitance (pF)
Capacitances
VR, Reverse Voltage (Volts)
fT, Current-Gain - Bandwidth
Product (MHz)
Current-Gain - Bandwidth Product
IC, Collector Current (Amperes)
hFE, DC Current Gain
DC Current Gain
IC, Collector Current (Amperes)
V, Voltage (Volts)
“On” Voltage
IC, Collector Current (Amperes)
VCE, Collector-Emitter Voltage
(Volts)
Collector Saturation Region
IB, Base Current (Amperes)
Part Number Table
Description Part Number
Transistor, NPN, TO-3 MJ15024
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