May 2008 Rev 1 1/10
STTH3R04
Ultrafast recovery diode
Features
Negligible switching losses
Low forward and reverse recovery times
High junction temperature
Description
The STTH3R04 series uses ST's new 400 V
planar Pt doping technology. The STTH3R04 is
specially suited for switching mode base drive and
transistor circuits.
Packaged in axial and surface mount packages,
this device is intended for use in low voltage, high
frequency inverters, free wheeling and polarity
protection.
Table 1. Device summary
IF(AV) 3 A
VRRM 400 V
Tj (max) 175 °C
VF (typ) 0.9 V
trr (typ) 18 ns
KA
DO-15
STTH3R04Q
DO-201AD
STTH3R04
SMB
STTH3R04U
SMC
STTH3R04S
Band indicates cathode side.
www.st.com
Characteristics STTH3R04
2/10
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.9 x IF(AV) + 0.083 x IF2(RMS)
Table 2. Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 400 V
IF(AV) Average forward current, δ = 0.5
DO-15 Tlead = 70 °C
3.0 A
DO-201AD Tlead = 80 °C
SMB Tlead = 70 °C
SMC Tlead = 100 °C
IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 60 A
Tstg Storage temperature range -65 to +175 °C
TjMaximum operating junction temperature(1)
1. On infinite heatsink with 10 mm lead length
175 °C
Table 3. Thermal parameters
Symbol Parameter Value Unit
Rth(j-l) Junction to lead Lead length = 10 mm
on infinite heatsink
DO-15 25
°C/W
DO-201AD 22
Rth(j-l) Junction to lead SMB 25
SMC 17
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min Typ Max Unit
IR(1)
1. Pulse test: tp = 5 ms, δ < 2 %
Reverse leakage current Tj = 25 °C VR = VRRM
5µA
Tj = 125 °C 5 50
VF(2)
2. Pulse test: tp = 380 µs, δ < 2 %
Forward voltage drop
Tj = 25 °C
IF = 3.0 A
1.5
VTj = 100 °C 1.0 1.25
Tj = 150 °C 0.9 1.15
STTH3R04 Characteristics
3/10
Table 5. Dynamic characteristics (Tj = 25 °C unless otherwise stated)
Symbol Parameter Test conditions Min Typ Max Unit
trr Reverse recovery time
IF = 1 A, dIF/dt = -50 A/µs,
VR = 30 V, Tj = 25 °C 35
ns
IF = 1 A, dIF/dt = -100 A/µs,
VR = 30 V, Tj = 25 °C 18 25
IRM Reverse recovery current IF = 3.0 A, dIF/dt = -200 A/µs,
VR = 320 V, Tj = 125 °C 45.5 A
tfr Forward recovery time IF = 3.0 A dIF/dt = 100 A/µs
VFR = 1.1 x VFmax, Tj = 25 °C 75 ns
VFP Forward recovery voltage IF = 3.0 A dIF/dt = 100 A/µs 2.5 V
Figure 1. Conduction losses versus
average forward current
Figure 2. Forward voltage drop versus
forward current
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
P(W)
δ=0.05 δ=0.1 δ=0.2 δ=0.5 δ=1
T
δ=tp/T tp
IF(AV)(A)
0
5
10
15
20
25
30
35
40
45
50
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
I
FM
(A)
TJ=150°C
(Maximum values)
TJ=150°C
(Maximum values)
TJ=150°C
(Typical values)
TJ=150°C
(Typical values)
TJ=25°C
(Maximum values)
TJ=25°C
(Maximum values)
VFM(V)
Figure 3. Relative variation of thermal
impedance junction to lead versus
pulse duration, DO-15 (epoxy FR4,
copper thickness = 35 µm)
Figure 4. Relative variation of thermal
impedance junction to ambient
versus pulse duration, DO-201AD
(epoxy FR4, copper
thickness = 35 µm)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Z
th(j-l)
/R
th(j-l)
Single pulse
DO-15
Lleads=10mm
tP(s)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Z
th(j-a)
/R
th(j-a)
Single pulse
DO-201AD
Lleads=10mm
tP(s)
Characteristics STTH3R04
4/10
Figure 5. Relative variation of thermal
impedance junction to ambient
versus pulse duration, SMB (epoxy
FR4, copper thickness = 35 µm)
Figure 6. Relative variation of thermal
impedance junction to ambient
versus pulse duration, SMC
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Z
th(j-a)
/R
th(j-a)
Single pulse
SMB
SCu=1cm²
tP(s)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Z
th(j-a)
/R
th(j-a)
Single pulse
SMC
SCu=1cm²
tP(s)
Figure 7. Junction capacitance versus
reverse voltage applied
(typical values)
Figure 8. Reverse recovery charges versus
dIF/dt (typical values)
1
10
100
1 10 100 1000
C(pF)
F=1MHz
VOSC=30mVRMS
Tj=25°C
VR(V)
0
10
20
30
40
50
60
70
80
90
100
10 100 1000
Q
RR
(nC)
IF= 3 A
VR=320 V
Tj=125 °C
Tj=25 °C
dIF/dt(A/µs)
Figure 9. Reverse recovery time versus
dIF/dt (typical values)
Figure 10. Peak reverse recovery current
versus dIF/dt (typical values)
0
10
20
30
40
50
60
70
80
90
100
10 100 1000
t
RR
(ns)
IF= 3 A
VR=320 V
Tj=125 °C
Tj=25 °C
dIF/dt(A/µs)
0
1
2
3
4
5
6
7
8
10 100 1000
I
RM
(A)
IF= 3 A
VR=320 V
Tj=125 °C
Tj=25 °C
dIF/dt(A/µs)
STTH3R04 Characteristics
5/10
Figure 11. Relative variations of dynamic
parameters versus junction
temperature
Figure 12. Transient peak forward voltage
versus dIF/dt (typical values)
Figure 13. Forward recovery time versus
dIF/dt (typical values)
Figure 14. Thermal resistance versus
lead length, DO-15
Figure 15. Thermal resistance junction to
ambient versus copper surface
under each lead, DO-201AD (epoxy
FR4, copper thickness = 35 µm)
Figure 16. Thermal resistance versus lead
length, DO-201AD
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25 50 75 100 125 150
Q
RR
;I
RM
[T
j
]/Q
RR
;I
RM
[T
j
=125°C]
IRM
QRR
IF= 3 A
VR=320 V
Tj(°C)
0
5
10
15
20
25
0 50 100 150 200 250 300 350 400 450 500
V
Fp
(V)
IF=3 A
Tj=125 °C
dIF/dt(A/µs)
0
10
20
30
40
50
60
70
80
90
100
110
120
130
0 50 100 150 200 250 300 350 400 450 500
t
FR
(ns)
IF=3 A
Tj=125 °C
dIF/dt(A/µs)
0
20
40
60
80
100
120
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
R
th(j-a)
(°C/W)
DO-15
Lleads(mm)
0
10
20
30
40
50
60
70
80
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
R
th(j-a)
(°C/W)
DO-201AD
SCu(cm²) 0
10
20
30
40
50
60
70
80
90
100
5 10152025
R
th
(°C/W)
DO-201AD
Rth(j-a)
Rth(j-l)
Lleads(mm)
Package information STTH3R04
6/10
Figure 17. Thermal resistance junction to ambient versus copper surface under
each lead, SMB, SMC (epoxy FR4, copper thickness = 35 µm)
2 Package information
Epoxy meets UL94, V0
Cooling method: by conduction (C)
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at www.st.com.
0
20
40
60
80
100
120
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
R
th(j-a)
(°C/W)
SMB
SMC
SCU(cm²)
Table 6. DO201AD dimensions
Ref.
Dimensions
Millimeters Inches
Min. Max. Min. Max.
A 9.50 0.374
B 25.40 1.000
C 5.30 0.209
D 1.30 0.051
E 1.25 0.049
Notes 1 - The lead diameter ø D is not
controlled over zone E
2 - The minimum length which must stay
straight between the right angles after
bending is 0.59"(15mm)
ØC
ØD
A
EE
Note 2
Note 1 Note 1
BB
STTH3R04 Package information
7/10
Figure 18. Footprint, dimensions in mm (inches)
Table 7. DO-15 dimensions
Ref.
Dimensions
Millimeters Inches
Min. Max. Min. Max.
A 6.05 6.75 0.238 0.266
B 2.95 3.53 0.116 0.139
C 26 31 1.024 1.220
D 0.71 0.88 0.028 0.035
Table 8. SMB dimensions
Ref.
Dimensions
Millimeters Inches
Min. Max. Min. Max.
A1 1.90 2.45 0.075 0.096
A2 0.05 0.20 0.002 0.008
b 1.95 2.20 0.077 0.087
c 0.15 0.40 0.006 0.016
D 3.30 3.95 0.130 0.156
E 5.10 5.60 0.201 0.220
E1 4.05 4.60 0.159 0.181
L 0.75 1.50 0.030 0.059
D
B
A
CC
E
C
L
E1
D
A1
A2
b
2.60
5.84
1.62
2.18
1.62
(0.064) (0.102)
(0.300)
(0.064)
(0.086)
Package information STTH3R04
8/10
Figure 19. Footprint, dimensions in mm (inches)
Table 9. SMC dimensions
Ref.
Dimensions
Millimeters Inches
Min. Max. Min. Max.
A1 1.90 2.45 0.075 0.096
A2 0.05 0.20 0.002 0.008
b 2.90 3.20 0.114 0.126
c 0.15 0.40 0.006 0.016
D 5.55 6.25 0.218 0.246
E 7.75 8.15 0.305 0.321
E1 6.60 7.15 0.260 0.281
E2 4.40 4.70 0.173 0.185
L 0.75 1.50 0.030 0.059
E
CLE2
E1
D
A1
A2
b
8.19
1.545.111.54
(0.061) (0.201)
(0.322)
(0.124)
(0.061)
3.14
STTH3R04 Ordering information
9/10
3 Ordering information
4 Revision history
Table 10. Ordering information
Order code Marking Package Weight Base qty Delivery mode
STTH3R04 STTH3R04 DO-201AD 1.16 g 600 Ammopack
STTH3R04RL STTH3R04 DO-201AD 1.16g 1900 Tape and reel
STTH3R04Q STTH3R04Q DO-15 0.4 g 1000 Ammopack
STTH3R04QRL STTH3R04Q DO-15 0.4 g 6000 Tape and reel
STTH3R04S R4S SMC 0.243 g 2500 Tape and reel
STTH3R04U 3R4U SMB 0.12 g 2500 Tape and reel
Table 11. Document revision history
Date Revision Description of changes
30-May-2008 1 First issue
STTH3R04
10/10
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2008 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com