SEMICONDUCTOR Sa TECHNICAL DATA 2N3250A 2N3251A PNP Silicon Small-Signal Transistors .designed for general-purpose switching and amplifier applications CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, NY. 11778 (VEp = 3.0 Vde. Voge = 40 Vac) MAXIMUM RATINGS Rating Symbal Value Unit Coltector- Emitter Voltage VCEO 60 Vde Collector-Base Voltage VCBO 60 Vde Emitter-Base Vaitage VEBO 50 Vde Collector Current Is 200 mAdc Power Dissipation Pr @Ta=25C 0.36 Watts Derate above 25 C ; mw.'C Watts @1c=25C 69 ee Derate above 25-C CASE 22-03, STYLE 1 Operating Junction and Storage Ty. Tstg -65 to 200 G TO-206AA (TO-18) Temperature Range ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collectar-Emitter Breakdown Voltage!" : V(BR)CEO 60 - Vde {ig = 10 mAdc; Collector-Base Breakdown Valtage ViBR}CBO 60 a Vde tig = 10 Adc) Base-Emitter Voltage V(BRIEBO 5.0 _ Vde ile = 10 pAde) 4 Collector Cutoff Current ICEX i (VcE = 40 Vdc. VEBjoty = 3.0 Vdc! 20 nAdc (Voce = 40 Vde. Veg = 3.0 Vdc. Ta = 150 Ci - ae wAde Collector Cutoff Current icBO _ 20 nade (Vcop = 40 Vdc) Emitter Cuto# Currant IBEX = 50 nAdc WL Psad Pulse Width 256 Ic 350 us Duty Cycle 1 Otc ore veemnued2N3250AJAN, 2N3251 AJAN SERIES ELECTRICAL CHARACTERISTICS continued (Ta = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain NEE - (Ig = 0.1 mAdc, Vog = 1.0 Vdc) 2N3250A 40 - 2N3251A 80 _ (Ic = 1.0 mAdc) 2N3250A 45 - 2N3251A 90 aaa lig 2 10 mAde. Voge = 10 Vdey) 2N3250A 50 150 2N3251A 100 300 ilg = 50 mAdc. VE = 10 Vde)\") 2N3250A 15 _ 2N32514 30 _ tig = 1.0 mAde, VCE = 1.0 Vdc. Ta = -55 C) 2N3250A 20 _ 2N3251A 40 - Coltector-Emitter Saturation Voltage VCE (sat) Vde {lc = 10 mAdc. tg = 1.0 mAdc) _ 0.25 (Ic = 50 mAdc, Ip = 5.0 mAdc)(") _ 05 Base-Emitter Saturation Voltage VBE (sat) Vde {Ig = 10 mAde. Ip = 1.0 mAdc) 0.6 09 (i = 50 mAde, Ip = 5.0 mAdc)(1) 12 SMALL-SIGNAL CHARACTERISTICS Current Gain 2N3250A Ne 50 200 a (Ig = 1.0 mAde, VCE = 10 Vde, f = 1.0 kHz) 2N3251A 100 400 Smali-Signal Current Transfer Ratio. Magnitude 2N3250A Inte! 256 9.0 a (Ic = 10 MAde, VCE = 20 Vdc, f = 100 MHz) 2N3251A 3.0 9.0 Output Capacitance (Vcp = 10 Vde. f= 0.1 to 1.0 MHz) Cabo a 6.0 pF Input Capacitance (Ven = 1.0 Vdc. f = 0.1 to 1.0 MHz} Cipe _ 80 oF (Output open circuited) @ Collector-Base Time Constant Ce 5.0 250 ps (Ig = 10 mAdc. VcE = 20 Vde. t = 31 8 MHz) Noise Figura NF _ 6.0 dB (ig = 100 pAde. Vog = 5.0 Vde, t = 100 Hz, Ag = 1.0 kohms) Voltage Feedback Ratio 2N3250A tre _ 10 x1o-4 (ig = 1.0 mAdc, Voge = 10 Vde, t = 1.0 KHz} 2Na251A ~ 20 Input Impedance 2N3250A hie 1.0 6.0 kohms (ig = 1.0 mAdc, Vog = 10 Vdc, f = 1.0 KHz) 2N9251A 2.0 12 Output Admittance 2N3250A Noe 40 40 umhos (ig = 1.0 mAdc. Voce = 10 Vde. f= 1 0 kHz) 2N3251A 10 60 SWITCHING CHARACTERISTICS (See Figure 30) (Voc = 3.0 Vde. ic = 10 mAde. Ig = 1 O mAdc, VpE = 0.5 Vdc} Delay Time (VBE = 0.5 Vdc) ta - 35 ns Rise Time (VBE = 0.5 Vdc) tr a 35 ns Storage Time 2N3250A ts _ 178 ns 2N3251A ad 200 Fail Time ay _ 50 fe M1) Pulsed Pulse Width 250 to 360 ys. Duty Cycle 1010 2.0% ASSURANCE TESTING (Pre/Post Burn-in) | Burn-in Conditions: Ta = 25 +3C, Vop = 25 Vde, 10 Vde for JANS Py = 360 mW Initial and End Point Limits Characteristics Tested Symbol Min Max Unit Collector Cutoff Current loBo _ 20 nAdc (Vcp = 40 Vde) DC Current Gain\1) nee _ (ic = 10 mAdc, VE = 1.0 Vdc! 2N3250A 50 150 2N3251A 100 300 Delta from Pre-Burn-in Meaaured Values Min Max | Delta Collector Cutoff Current sICBO a =100 % of trittal Value nAdc or 25.0 whichever is greater Delta DC Current Gain!) AMEE _ 5 %, of initial Value 111 Pulsed. Pulse Width 250 to 350 1s Duty Cycle 1C tc 20% cic een an NR NSE NERS BA Oe SE mC