TEMIC Siliconix VN0610L, VN1IOKE/KM, VN2222L N-Channel Enhancement-Mode MOS Transistors Zener Gate Protected Product Summary Part Number | _Veryngs Min (V) | fps(om Max@) | Vesa) | In). VNO0610L 5 @ Vgs = 10V 0.8 to 2.5 0.27 VNI0KE 60 5 @Vas=10V_ 0.8 to 2.5 0.17 VN10KM . 5 @Vgs = 10V. 0.8 to 2.5 0.31 VN2222L 715 @ Vgs = 10 V 0.6 to 2.5 0.23 Features Benefits Applications Zener Diode Input Protected Extra ESD Protection Drivers: Relays, Solenoids, Lamps, Hammers, Low On-Resistance: 3 Q Low Offset Voltage Displays, Memories, Transistors, etc. . @ Ultralow Threshold: 1.2 V Low-Voltage Operation Battery Operated Systems Low Input Capacitance: 38 pF High-Speed, Easily Driven Solid-State Relays Low Input and Output Leakage Low Error Voltage Inductive Load Drivers TO-206AC TO-226AA (TO-52) -92) Top View VNO610L VN2222L Symbol Absolute Maximum Ratings (T, = 25C Unless Otherwise Noted) VNOG1OL | VNIOKE | VNIOKM | VN2222L | Unit Drain-Source Voltage Vps 60 60 60 60 v Gate-Source Voltage Vos 15/-0.3 15/-0,3 15/~0.3 15/-0.3 oo Ta= 25C 0.27 0.17 0.31 0.23 Continuous Drain Current (Ty = 150C) Ip Ta= 100C 0.17 0.11 0.20 0.14 A Pulsed Drain Current Ipm 1 1 1 1 Ta= 25C 08 03 1 0.8 Power Dissipation Pp Ww Ta= 100C 0,32 0.12 04 0,32 Maximum Junction-to-Ambient Riya 156 400 125 156 c/w Operating Junction and Storage Temperature Range Try, Tstg 55t0150 . C Notes a. Pulse width limited by maximum junction temperature. P-38480Rev. B (08/26/94) 11-55 Low Power MOS =a VN0610L, VN1IOKE/KM, VN2222L TEMIC Siliconix Specifications SO ees Limits VNO0610L VN10KE VNLOKM VN2222L Parameter Symbol Test Conditions Typ> | Min | Max | Min | Max | Unit Common Source Output Conductance Bos Drain-Source Breakdown Voltage | Va@rypss Ves = OV, Ip = 100 pA 120 60 60 / - v Gate-Threshold Voltage Vesth) Vps = Vas, Ip =1mA 12 08 2.5 0.6 2.5 Gate-Body Leakage Igss- Vos = 0V, Ves = 15 V 1 100 100 nA - Vps = 48 V, Vos = 0V 10 10 Zero Gate Voltage Drain Current Ipss T= sc 500 500 pA On-State Drain Current? - TD(on) Vps = 10 V, Ves = 10V 1 0.75 0.75 A Vas =5V,Ip =0.2A 4 18 15 Drain-Source On-Resistance TDs(on) Vos = 10 ViIp=05A 3 5 VS Q Ty = 125C | 5.6 9 13.5 Forward Transconductance* Sis Vps = 10V,Ip = O05A 300 | 100 100 Vps = 75 V,Ip = 005A 02 ms Input Capacitance Css 38 60 60 Output Capacitance - -# Coss Vps = 25V, Vog=0V,f=1MHz | 16 25 25 | pF Reverse Transfer Capacitance Crss 7 OT 2 5 5 Ss Turn-On Time . ton Vpp = 15 V, Rp = 232 7 io 10 ns Turn-Off Time torr | Ip 064A, Venn = 10V, Ro = 252 [9 10 10 Notes . . : . . - a. Ta = 25C unless otherwise noted. _ _ VNDP06 b. For DESIGN AID ONLY, not subject to production testing. c. Pulse test: PW = 300 ps duty cycle =2%, d. Switching time is essentially independent of operating temperature. - . Bre ee a es ~ as gig . ane 2 11-56 : . P-38480-Rev. B (08/26/94) TEMIC Siliconix Typical Characteristics (25C Unless Otherwise Noted) - Ohmic Ty = 25C Characteristics Vos =2.0V Ip ~ Drain Current (mA) 0 0.4 08 12 16 2.0 Vps Drain-to-Source Voltage (V) Transfer Characteristics T Vps = 15 V WV Ty = -55C 0.5 0.4 = NS g WA E03 Ate 8 yj Ss 125C a A 0.2 { 8 0.1 - J 0 0 1 2 3 4 5 Vas Gate-Source Voltage (V) 5 On-Resistance vs. Drain Current o g 4 3 Vos = 10V % 3 - os seeamrnranenn] poem 3 |-T 2 a 2 3 a Lot E 0 0 0.2 0.4 0.6 08 1L.0 Ip Drain Current (A) P-38480Rev. B (08/2694) Output -10 30 70 110 Ty Junction Temperature (C) t A oS VN0610L, VN10KE/KM, VN2222L Low Gate Drive Low Power MOS a 6Vv. Ty =25C | .. 5V => 8 Vos = 10V x a E 06 6 -- a A 04 I WB 3V a 0.2 2V 0 z oo 0 1 2 3 4 Vps Drain-to-Source Voltage (V) .On-Resistance vs, Gate-to-Source Voltage Ty = 25C @ % a Ip = 50mA ; 0 4 8 12 a) Vas ~ Gate-Source Voltage (V) Normalized On-Resistance vs. Junction Temperature 2.25 Vos = 10V g 2.00 & 4.75 Ss &S 8: 1.50 a a z 1.25 g F 1.00 = zg 0.75 0.50 150 11-57 VN0610L, VNIOKE/KM, VN2222L TEMIC Siliconix Typical Characteristics (25C Unless Otherwise Noted) (Contd) 40 Threshold Region i i A rl 2 0 O25 05.075 10 125 45 1.75 Vas ~ Gate-to-Source Voltage (V) Gate Charge 15.0 : > Ip =0.5A 2 12.5 S 100 Py VA 3 1S g Oo 50 r NN 48V 8 as 0 0 100 6200 = 3300S 400 500, 600 Q, ~ Total Gate Charge (pC) Capacitance 100 Ves =0V f=1MHz 0 10 20 30 40 50 Vps ~ Drain-to-Source Voltage (V) 00 Load Condition Effects on Switching -1 Vpp = 15 V Rp =25Q2 Ves = 0to 10 V n o t Switching Time (ns) _01 . 0.5 1.0 Ip Drain Current (A) Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) = 05 im Thermal Impedance 0.01 Normalized Effective Transient Single Pulse 0.01 01 1 10 + Pom el ty [~ ho 1, Duty Cycle, D = a 2, Per Unit Base = Ryyya = 156C/W 3.Tra Ta = PomZnia 100 1K 10K ty ~ Square Wave Pulse Duration (sec) 11-58 P-38480Rev. B (08/26/94)