MOTOROLA SC {DIODES/OPTO} MOTOROLA ws SEMICONDUCTOR x TECHNICAL DATA Lee D i b3b?e255 007953? & i 1N3659 thru 1N3663 sT~Ol-19 High Surge Handling Ability @ Rugged Construction @ Reverse Polarity Avaifable Hermetically Sealed LOW COST RECTIFIERS FOR MEDIUM CURRENT INDUSTRIAL AND COMMERCIAL APPLICATIONS 30-AMP RECTIFIERS SILICON DIFFUSED-JUNCTION *MAXIMUM RATINGS (Tc = 25C unless otherwise noted) *indicates JEDEC registered data. MECHANICAL CHARACTERISTICS CASE: Welded hermetically sealed construction WEIGHT: 9 grams (approx.) i.e: IN3660R) . MOUNTING POSITION: Any FINISH: All external surfaces corrosion resistant, terminals readily solderable POLARITY: Cathode connected to case (reverse polarity available denoted by Suffix R, 3-11 Rati Symbol 1N3659 1N3660 1N3661 1N3662 4+N3663 Unit ating Y 1N3669R| 1N3660R | 1N3661R| 1N3662A| 1N3663R | Peak Repetitive Reverse Voltage VARM 50 100 200 300 400 Volts DC Blocking Voltage VR . RMS Reverse Voltage VRIRMS) 35 70 140 210 280 Volts Average Half-Wave Rectified Forward Current lo with Resistive Load @ 100C case 30 Amp @ 150C case 26 Amp Peak One Cycle Surge Current (150C case temp, FSM 400 Amp 60 Hz) . Operating Junction Temperature Ty -65 to 4175 | C Storage Temperature Tstg at = -66 to +200 |__ C *ELECTRICAL CHARACTERISTICS Ch toristi Symbol 1N3659 1N3660 1N3661 4N3662 +N3663 Unit aracteriatic Y +N36659R| 1N3660R | 1N3661R | 1N3662R| 1N3663R} Maximum Forward Voltage at 25 Amp Ve 4.2 1,2 4.2 1.2 1.2 Volts DC Forward Current instantaneous Forward Voltage Drop VE 1.4 Volts (ip = 78.5 Amps, Ty = 25C) Maximum Full Cycle Average Reverse Current @ Rated PIV and Current (as half-wave IR(AV} 5.0 4.5 4.0 3.5 3.0 mA rectifier, resistive load, 150C) *THERMAL CHARACTERISTICS Charactoristic Symbol Value Unit Thermal Resistance, Junction to Case Resc 1.2 oc/W a eVOOoO MOTOROLA SC {DIODES/OPTOT T-Ol-/19 1eE D a b3b?e55 UO79ISIS os | 4N3659 thru 1N3663 i 40 30 35 = 25 J z i g 5 * # a 7 a 20 3 25 & & 8 2 a = 20 = 3 = 15 2 5 = 3 is 3 2 / 2 10 2 10 z , 2 = 5 | 0 0 0 O02 Of 06 08 10. 12 14 16 138 20 0 50 100 150 200 = Vp, FORWARD VOLTAGE. (vOLTS) Te, CASE TEMPERATURE (C) 1N3659-1N3663 rectifiers are designed for press-fitted mounting ina heat sink. Recommended procedures for this type of mounting are as follows: 1, Drill a hole in the heat sink 0,499 + .001 inch in diameter. 2. Break-the hole edge as shown to prevent shearing off the knurled edge of the rectifier when it is press- : ed into the hole. moe | 3. The depth of the break should be 0.010 inch maximum to retain maximum heat sink surface contact : with the knurled rectifier surface. : 4. Width of the break should be 0.030 inch as shown. These procedures will allow proper entry of the rectifier knurled surface, provide good rectifier- heat sink surface contact, and assure reliable rectifier operation. If the break is made too deep, thereby reduc- ing contact area for heat transfer, reliability of operation will be impaired. . These devices can. be.mounted in a thin chassis by inserting the rectifier through an additional heat sink plate which is mounted in intimate contact with the upper side of the chassis. This provides additional con- tact area for the rectifier knurled edge, as well as additional heat sink capacity. : . TYPICAL THERMAL 01 NOM RESISTANCE, CASE TO SINK, #cs = 0:2C/W .01 NOM [. 501 505 t DIA /, HEAT SINK | 0.499 + 0.001 DIA HEAT SINK MOUNTING RIVET . : ADDITIONAL : . HEAT SINK PLATE : 4 7 UL INTIMATE COMPLETE CONTACT AREA KNURL CONTACT AREA THIN CHASSIS THIN-CHASSIS MOUNTING 3-12