DC COMPONENTS CO., LTD. 2SD882D DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in output stage of 1W audio amplifier, voltage regulator, DC-DC converter and relay driver. TO-126ML Pinning 1 = Emitter 2 = Collector 3 = Base .163(4.12) .153(3.87) Absolute Maximum Ratings(TA=25oC) Characteristic Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V IC 3 A Collector Current(Pulse) IC 7 A Base Current(DC) IB 0.6 A o PD 10 W Total Power Dissipation(TA=25 C) o PD 1 W Junction Temperature TJ +150 o -55 to +150 o Storage Temperature TSTG .123(3.12) .113(2.87) .300(7.62) .290(7.37) 1 2 3 Collector Current(DC) .146(3.70) .136(3.44) .060(1.52) .050(1.27) .148(3.75) .138(3.50) Symbol Total Power Dissipation(TC=25 C) .044(1.12) .034(0.87) .084(2.12) .074(1.87) .056(1.42) .046(1.17) .591(15.0) .551(14.0) .084(2.14) .074(1.88) .033(0.84) .027(0.68) .180 Typ (4.56) .027(0.69) .017(0.43) .090 Typ (2.28) C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO 40 - - V IC=100A Collector-Emitter Breakdown Voltage BVCEO 30 - - V IC=1mA Emitter-Base Breakdown Volatge BVEBO 5 - - V IE=10A ICBO - - 1 A VCB=30V Collector Cutoff Current Test Conditions IEBO - - 1 A VEB=3V Collector-Emitter Saturation Voltage(1) VCE(sat) - 0.3 0.5 V IC=2A, IB=0.2A Base-Emitter Saturation Voltage(1) VBE(sat) - 1 2 V IC=2A, IB=0.2A Emitter Cutoff Current (1) DC Current Gain hFE1 30 150 - - IC=20mA, VCE=2V hFE2 100 200 500 - IC=1A, VCE=2V Transition Frequency fT - 90 - MHz Output Capacitance Cob - 45 - pF (1)Pulse Test: Pulse Width 380s, Duty Cycle 2% Classification of hFE2 Rank Q P E Range 100~200 160~320 250~500 IC=0.1A, VCE=5V IE=0, VCB=10V, f=1MHz