Symbol
V
V
Drain-Source Voltage
20
Maximum UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
AO6404
20V N-Channel MOSFET
Product Summary
VDS (V) = 20V
ID= 8.6A (VGS = 10V)
RDS(ON) < 17mΩ(VGS = 10V)
RDS(ON) < 18mΩ(VGS = 4.5V)
RDS(ON) < 24mΩ(VGS = 2.5V)
RDS(ON) < 33mΩ(VGS = 1.8V)
ESD Rating: 2000V HBM
General Description
The AO6404 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating. It is ESD protected.
TSOP6
Top View Bottom View
Pin1
D D
G
D
S
D
Top View
1
2
3
6
5
4
G
D
S
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
45 62.5
70 110
R
θJL
33 50
T
A
=70°C
I
D
8.6
V
V
6.8
30Pulsed Drain Current
Power Dissipation
A
T
A
=25°C
A
P
D
2
Drain-Source Voltage
20
Continuous Drain
Current
A
T
A
=25°C
T
A
=70°C
°C/W
Maximum Junction-to-Ambient
Steady-State °C/W
±12Gate-Source Voltage
Junction and Storage Temperature Range °C
1.28
-55 to 150
W
Maximum Junction-to-Lead
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
t ≤ 10s R
θJA
Alpha & Omega Semiconductor, Ltd.
AO6404
Symbol Min Typ Max Units
BV
DSS
20 V
10
T
J
=55°C 25
I
GSS
10 µA
BV
GSO
±12 V
V
GS(th)
0.5 0.75 1 V
I
D(ON)
30 A
13.4 17
T
J
=125°C 16 20
14.8 18 mΩ
18.8 24 mΩ
25.5 33 mΩ
g
FS
36 S
V
SD
0.73 1 V
I
S
2.9 A
C
iss
1810 pF
C
oss
232 pF
C
rss
200 pF
R
g
1.6 Ω
Q
g
17.9 nC
Q
gs
1.5
nC
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge V
GS
=4.5V, V
DS
=10V, I
D
=8.5A
Gate Source Charge
R
DS(ON)
I
S
=1A,V
GS
=0V
DYNAMIC PARAMETERS
V
GS
=0V, V
DS
=10V, f=1MHz
mΩ
V
GS
=2.5V, I
D
=4A
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
V
GS
=1.8V, I
D
=3A
Forward Transconductance
Diode Forward Voltage V
DS
=5V, I
D
=8A
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=V
GS
I
D
=250µA
V
DS
=16V, V
GS
=0V
V
DS
=0V, V
GS
=±10V
µA
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=8.5A
Gate-Body leakage current
Static Drain-Source On-Resistance V
GS
=4.5V, I
D
=5A
Gate-Source Breakdown Voltage V
DS
=0V, I
G
=±250uA
Gate Threshold Voltage
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Alpha & Omega Semiconductor, Ltd.
Q
gs
1.5
nC
Q
gd
4.7 nC
t
D(on)
2.5 ns
t
r
7.2 ns
t
D(off)
49 ns
t
f
10.8 ns
t
rr
22 ns
Q
rr
9.8 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Turn-Off Fall Time
V
GS
=4.5V, V
DS
=10V, I
D
=8.5A
Gate Source Charge
Gate Drain Charge
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=8.5A, dI/dt=100A/µs
Turn-On Rise Time
Turn-Off DelayTime V
GS
=10V, V
DS
=10V, R
L
=1.2Ω,
R
GEN
=3Ω
Turn-On DelayTime
I
F
=8.5A, dI/dt=100A/µs
A: The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev4: Feb. 2012
Alpha & Omega Semiconductor, Ltd.
AO6404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
30
35
40
012345
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics
V
GS
=1.5V
2V
2.5V
4.5V
10
0
5
10
15
20
25
30
0 0.5 1 1.5 2 2.5
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics
5
10
15
20
25
30
0
5
10
15
20
RDS(ON) (mΩ
Ω
Ω
Ω)
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Normalized On-Resistance
VGS=10V
V
GS
=4.5V
VGS=2.5V
25°C
125°C
VDS=5V
VGS=2.5V
VGS=4.5V
VGS=10V
VGS=1.8V
VGS=1.8V ID=5A
Alpha & Omega Semiconductor, Ltd.
50 5 10 15 20
ID(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0.00001
0.0001
0.001
0.01
0.1
1
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics
25°C
125°C
0.8 0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
0
5
10
15
20
25
30
35
40
0 2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
ID=5A
25°C
125°C
Alpha & Omega Semiconductor, Ltd.
AO6404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0 4 8 12 16 20
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
500
1000
1500
2000
2500
3000
0 5 10 15 20
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Power (W)
Pulse Width (s)
Coss
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
ID(Amps)
100
µ
s
10ms
1ms
0.1s
1s
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
VDS=10V
ID=8A
TJ(Max)=150°C
TA=25°C
10
µ
s
Alpha & Omega Semiconductor, Ltd.
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
0.1 0.1 1 10 100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Single Pulse
D=Ton/(Ton+Toff)
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=110°C/W
T
on
T
off
P
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Alpha & Omega Semiconductor, Ltd.