Note 1: 1/4-28 UNF3A Note 2: Full thread within 2 1/2 threads Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes ANADVZHZACTOMMVOD>S 065 145 055 025 -685 17.20 17.40 1 770 --- 19.56 1.250 50.48 31.75 447 10.84 11.35 155 2.92 3.94 915 --- 13.08 .249 --- 6.32 2 300 5.08 7.62 -- 3.05 667 --- 16.94 Dia. 085 1.65 2.15 155 5.68 5.93 Dia. 065 1.40 1.65 030 64 76 TO208AC (TO-65) Microsemi Forward & Reverse Reverse Transient Catalog Number Repetitive Blocking Blocking VRRM e dv/dt200 V/usec 40C20B 200 500 1000 A t 40C40B 400 500 mperes surge curren 40C60B 600 700 Economical for medium 2oct008 1000 1100 power applications To specify dv/dt other than 200V/usec., contact factory. Electrical Characteristics Te = 102C |T(RMS) 63 Amps 102C yicav) 40 Amps TC = Max. RMS on-state current Max. average on-state cur. Max. peak on-state voltage 3.0 Volts 'TM = 500 A(peak) Max. holding current Ta 200 mA 5 Max. peak one cycle surge current ITSM = 1000 A TC = 120C, 60Hz Max. I?t capability for fusing I2 A100A2S t = 8.3 ms Thermal and Mechanical Characteristics Operating junction temp range Ty -65C to 125C Storage temperature range TSTG 65C to 150C Maximum thermal resistance Reuc 0.35C/W Junction to case Typical thermal resistance 6cs 0.20C/W = Case to sink Mounting torque Weight 25-30 inch pounds 0.56 ounces (16 grams) typical LAWRENCE OWicrosemi 6 Lake Street Lawrence, MA 01841 PH: (978) 620-2600 FAX: (978) 689-0803 www.microsemi.com 04-25-07 Rev. 3 40C TJ = 25C unless otherwise indicated Switching Critical rate of rise of on-state current (note 1) di/dt 200A /usec. TJ = 125C Typical delay time (note 1) td 3.0 usec. Typical circuit commuted turn-off time (note 2) tq 100 usec. TJ = 125C Note 1: 'TM = 50A, VD = VDRM. GT = 12V open circuit, 20 ohm-O.1 usec. rise time Note 2: TM = 50A, di/dt = 5A/usec., VR during turnoff interval = 50V min., reapplied dv/dt = 20V/usec., linear to rated VDRM, VGT = OV Triggering Max. gate voltage to trigger VeT 5.0V Max. nontriggering gate voltage VeD 0.25V TJ = 125C Max. gate current to trigger | GT 100mA Max. peak gate power Peau 10W Average gate power PG(AV) 1.0W tp = 10 usec. Max. peak gate current | GM 3.0A Max. peak gate voltage (forward) VGM 20V Max. peak gate voltage (reverse) Vem 10V Blocking Max. leakage current IDRM 6mA Ty = 125C & VDRM Max. reverse leakage IRRM 6mA Ty = 125C & VRRM Critical rate of rise of offstate voltage dv/dt 200V/usec. TJ = 125C 04-25-07 Rev. 3 40C Figure 1 Figure 3 Typical Forward OnState Characteristics Maximum Power Dissipation 1 70 8000 d 180 60 120] 6000 ool PSV LMA gi oO 4000 SS NS \ Maximum Power Dissipation Watts 30 V NM AL 20 Vy VN" 1000 10 J YE" 800 0 600 0 5 10 15 20 25 30 35 40 45 50 400 Average On-State Current Amperes o Figure 4 & 200 Transient Thermal Impedance & 0.7 ae) + 100 z 0.6 3 80 O05 60 | = 0.4 ? 40 ge Y & 6 30.3 Z O Oo V4 3 2 E 0.2 8 w EV. 7 Ss to 0.1 D ~ oF LT : 52 oO 10 SF 8 12 #16 #20 24 28 %32 36 -001 01 0.1 1.0 10 100 Instantaneous OnState Voltage Volts Time in Seconds Figure 2 Figure 5 Forward Current Derating o Maximum Nonrepetitive Surge Current oO oO o 130 5 1100 2 125 < 1000 z IN | 900 = 120 NSS . S z 5 NSN B 115 NSS 800 So 4 _ 3 RK oO 2 110 SASSO @ 700 : Nn 3 = o + = 105 N 600 E Cc E 100 500 3 30 607 |90 120| | 1807 5 = 95 400 0 5S 10 15 20 25 30 35 40 45 50 1 10 100 Average OnState Current Amperes Number of Cycles 04-25-07 Rev. 3