Order this document by 2N6251/D SEMICONDUCTOR TECHNICAL DATA 15 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 175 WATTS . . . designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications. * * * * High Voltage Breakdown Rating Low Saturation Voltages Fast Switching Capability High ES/b Energy Handling Capability IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS Rating Collector-Emitter Voltage (1) Collector-Emitter Voltage (1) Collector-Base Voltage (1) Emitter-Base Voltage Collector Current -- Continuous** -- Peak Base Current -- Continuous (1) -- Peak Emitter Current -- Continuous -- Peak Total Power Dissipation @ TC = 25_C @ TC = 100_C Derate above 25_C* Operating and Storage Junction (1) Temperature Range Symbol Value Unit VCEO(sus) VCER(sus) 350 Vdc 375 Vdc VCB VEB 450 Vdc 6.0 Vdc IC ICM IB IBM IE IEM PD 15 30 Adc 10 20 Adc 25 50 Adc 175 100 1.0 Watts TJ, Tstg - 65 to + 200 _C Symbol Max Unit RJC 1.0 _C/W TL 275 _C CASE 1-07 TO-204AA (TO-3) W/_C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes: 1/8" from Case for 5 Seconds (1) Indicates JEDEC Registered Data. ** JEDEC Registered Value is 10 A, Motorola Guaranteed Value is 15 A. POWER DERATING FACTOR (%) 100 SECOND BREAKDOWN DERATING 80 THERMAL DERATING 60 40 20 0 0 40 80 120 160 200 TC, CASE TEMPERATURE (C) Figure 1. Power Derating REV 1 3-104 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 2N6251 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III v IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit Collector-Emitter Sustaining Voltage (Table 1) (IC = 200 mA, IB = 0) VCEO(sus) 350 -- Vdc Collector-Emitter Sustaining Voltage (Table 1) (IC = 200 mA) VCER(sus) 375 -- Vdc -- -- 5.0 10 Collector Cutoff Current (VCE = Rated VCER, VBE(off) = 1.5 Vdc) (VCE = Rated VCER, VBE(off) = 1.5 Vdc, TC = 125_C) ICEV mAdc Collector Cutoff Current (VCE = 150 Vdc, IB = 0) (VCE = 225 Vdc, IB = 0) (VCE = 300 Vdc, IB = 0) ICEO -- 5.0 mAdc Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) IEBO -- 1.0 mAdc IS/b 5.8 0.3 -- -- Vdc ES/b 2.5 -- mJ hFE 6.0 50 -- Collector-Emitter Saturation Voltage (IC = 10 Adc, IB = 1.67 Adc) VCE(sat) -- 1.5 Vdc Base-Emitter Saturation Voltage (IC = 10 Adc, IB = 1.0 Adc) (IC = 10 Adc, IB = 1.25 Adc) (IC = 10 Adc, IB = 1.67 Adc) VBE(sat) -- 2.5 Vdc fT 2.5 -- MHz tr -- 2.0 s ts -- 3.5 s tf -- 1.0 s SECOND BREAKDOWN Second Breakdown Collector Current with base forward biased t = 1.0s (non-repetitive) Second Breakdown Energy with base reverse biased (Table 1) (IC = 10 A, VBE(off) = 4.0 Vdc, L = 50 H) (VCE = 30 V) (VCE = 100 V) ON CHARACTERISTICS (1) DC Current Gain (IC = 10 Adc, VCE = 3.0 Vdc) DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz) SWITCHING CHARACTERISTICS Resistive Load (Table 1) Rise Time Storage Time Fall Time (VCC = 200 Vdc, IC = 10 A, Duty Cycle 2.0%, tp = 100 s) (IB1 = IB2 = 1.67 Adc) * Indicates JEDEC Registered Data. (1) Measured on a curve tracer (60 Hz full-wave rectified sine wave). Motorola Bipolar Power Transistor Device Data 3-105 2N6251 Table 1. Test Conditions for Dynamic Performance VCEO(sus) VCER(sus) 39 CIRCUIT VALUES 2 TEST CIRCUITS 0.02 F 2 Lcoil = 50 H, VCC = 11.5 V Rcoil = 0.2 VCC = 200 V RL = 20 RESISTIVE TEST CIRCUIT IC Rcoil 1N4937 t1 t VCL t1 VCC RS + 200 V t1 Adjusted to Obtain IC IC(pk) Lcoil 20 DC CURRENT PROBE (ICpk) [ LcoilVCC 1 tf TUT 3 0.1 VCE 2 25 t NOTE: SET IC(pk) TO OBTAIN IC = 200 mA AT VCEO(sus) EQUAL TO RATED VALUE. NOTE: ADJUST VClamp VOLTAGE FOR VCEO(sus) RATED VALUE. r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2 IC = 10 A PW 100 s tr 5 ns tf 50 ns DUTY CYCLE 2% OUTPUT WAVEFORMS TUT 2 4V 0 Lcoil = 14 mH Rcoil = 0.05 VCC = 0 to 50 V fo = 60 Hz INDUCTIVE TEST CIRCUIT 1 51 +10 V 0 Lcoil = 42 mH Rcoil = 0.7 , fo = 60 Hz VCC = 0 to 50 V 4.7 51 50 51 2 TIP41B 1 IB1 = 2.0 A +6.0 V 0 + 15 V 50 F 50 1 +6.0 V 1 RESISTIVE SWITCHING 39 1 INPUT CONDITIONS ES/b 1.0 0.7 0.5 0.3 - 6.0 V D = 0.5 0.2 0.2 0.1 0.1 0.07 0.05 ZJC(t) = r(t) RJC RJC = 1.0C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZJC(t) 0.05 0.02 0.03 0.02 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 50 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1.0 k Figure 2. Thermal Response IC, COLLECTOR CURRENT (AMP) 30 20 500 s 100 s 1.0 10 ms ms 10 5.0 3.0 2.0 dc 1.0 0.5 0.3 0.2 50 ms 50 70 100 5.0 7.0 10 20 30 200 300 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. Active-Region Safe Operating Area 3-106 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 3 is based on TC = 25_C. TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25 _C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltage shown on Figure 3 may be found at any case temperature by using the appropriate curve on Figure 1. TJ(pk) may be calculated from the data in Figure 2. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. w TC = 25C UNLESS NOTED BONDING WIRE LIMIT THERMAL LIMIT, SINGLE PULSE SECOND BREAKDOWN LIMIT 0.1 0.05 0.03 TC = 25C TC = 100C 20 s 500 Motorola Bipolar Power Transistor Device Data 2N6251 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) DC CHARACTERISTICS 100 hFE, DC CURRENT GAIN 70 TJ = 150C 50 25C 30 20 - 55C 10 VCE = 3.0 V VCE = 10 V 7.0 5.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 20 2.0 TJ = 25C 1.6 1.2 IC = 2.0 A V, VOLTAGE (VOLTS) V, TEMPERATURE COEFFICIENTS (mV/C) TJ = 25C 1.0 VBE(sat) @ IC/IB = 5.0 0.8 VBE(on) @ VCE = 3.0 V 0.4 0.2 0 VCE(sat) @ IC/IB = 5 0.2 0.3 0.5 1.0 2.0 3.0 15A 0.4 0 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IB, BASE CURRENT (mA) 5.0 7.0 Figure 5. Collector Saturation Region 1.4 0.6 10 A 0.8 Figure 4. DC Current Gain 1.2 6.0 A 5.0 7.0 10 2.5 2.0 hFE @ VCE 3 1.0 + 3.0 V 25C to 150C 0.5 *VC for VCE(sat) 0 - 55C to 25C - 0.5 - 1.0 25C to 150C VB for VBE - 1.5 - 55C to 25C - 2.0 - 2.5 20 *APPLIES FOR IC/IB 1.5 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 6. "On" Voltagae Figure 7. Temperature Coefficients 20 RESISTIVE SWITCHING PERFORMANCE 3.0 k 2.0 k tr 1.0 k 700 500 300 200 td @ VBE(off) = 5.0 V 100 70 50 30 0.02 ts 3.0 k t, TIME (ns) t, TIME (ns) 10 k 7.0 k 5.0 k VCC = 200 V IC/IB = 5.0 TJ = 25C 2.0 k 1.0 k 700 500 VCC = 200 V IC/IB = 5.0 IB1 = IB2 TJ = 25C tr 300 200 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 100 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 8. Turn-on Time Figure 9. Turn-off Time Motorola Bipolar Power Transistor Device Data 5.0 10 20 3-107 2N6251 PACKAGE DIMENSIONS A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. C -T- E D K 2 PL 0.13 (0.005) U T Q M M Y M -Y- L V SEATING PLANE 2 H G B M T Y 1 -Q- 0.13 (0.005) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1-07 TO-204AA (TO-3) ISSUE Z 3-108 Motorola Bipolar Power Transistor Device Data 2N6251 Motorola reserves the right to make changes without further notice to any products herein. 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