2N6251 - Motorola / Freescale Semiconductor

3–104 Motorola Bipolar Power Transistor Device Data

    



. . . designed for high voltage inverters, switching regulators and line operated

amplifier applications. Especially well suited for switching power supply applications.

•High Voltage Breakdown Rating

•Low Saturation Voltages

•Fast Switching Capability

•High ES/b Energy Handling Capability

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Value

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage (1)

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎÎÎÎ

350

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage (1)

ÎÎÎÎÎ

VCER(sus)

ÎÎÎÎÎÎ

375

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage (1)

ÎÎÎÎÎ

VCB

ÎÎÎÎÎÎ

450

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎ

VEB

ÎÎÎÎÎÎ

6.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous**

— Peak

ÎÎÎÎÎ

ICM

ÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current — Continuous (1)

— Peak

ÎÎÎÎÎ

IBM

ÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Current— Continuous

— Peak

ÎÎÎÎÎ

IEM

ÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25

@ TC = 100

Derate above 25

ÎÎÎÎÎ

ÎÎÎÎÎÎ

175

100

1.0

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction (1)

Temperature Range

ÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎ

–65 to +200

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎ

1.0

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎ

Maximum Lead Temperature for Soldering

Purposes: 1/8” from Case for 5 Seconds

ÎÎÎÎÎ

ÎÎÎÎÎÎ

275

ÎÎÎ

(1) Indicates JEDEC Registered Data.

**JEDEC Registered Value is 10 A, Motorola Guaranteed Value is 15 A.

0 40 120 200

Figure 1. Power Derating

POWER DERATING FACTOR (%)

100

TC, CASE TEMPERATURE (

SECOND BREAKDOWN

DERATING

THERMAL

DERATING

16080



SEMICONDUCTOR TECHNICAL DATA Order this document

by 2N6251/D

 Motorola, Inc. 1995



15 AMPERE

POWER TRANSISTOR

NPN SILICON

350 VOLTS

175 WATTS

CASE 1–07

TO–204AA

(TO–3)

REV 1

2N6251

3–105

Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (Table 1)

(IC = 200 mA, IB = 0)

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

350

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (Table 1)

(IC = 200 mA)

ÎÎÎÎ

VCER(sus)

ÎÎÎÎ

375

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = Rated VCER, VBE(off) = 1.5 Vdc)

(VCE = Rated VCER, VBE(off) = 1.5 Vdc, TC = 125

ÎÎÎÎ

ICEV

ÎÎÎÎ

—

ÎÎÎÎ

5.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 150 Vdc, IB = 0)

(VCE = 225 Vdc, IB = 0)

(VCE = 300 Vdc, IB = 0)

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

5.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VEB = 6.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SECOND BREAKDOWN

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Second Breakdown Collector Current with base forward (VCE = 30 V)

biased t = 1.0s (non–repetitive) (VCE = 100 V)

ÎÎÎÎ

IS/b

ÎÎÎÎ

5.8

0.3

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Second Breakdown Energy with base reverse biased (Table 1)

(IC = 10 A, VBE(off) = 4.0 Vdc, L = 50 µH)

ÎÎÎÎ

ES/b

ÎÎÎÎ

2.5

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 10 Adc, VCE = 3.0 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

6.0

ÎÎÎÎ

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 10 Adc, IB = 1.67 Adc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

1.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage

(IC = 10 Adc, IB = 1.0 Adc)

(IC = 10 Adc, IB = 1.25 Adc)

(IC = 10 Adc, IB = 1.67 Adc)

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

2.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product

(IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz)

ÎÎÎÎ

2.5

ÎÎÎÎ

—

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Resistive Load (Table 1)

ÎÎÎÎÎÎÎ

Rise Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 200 Vdc, IC = 10 A, Duty

Cycle

2.0%, tp = 100 µs)

(IB1 = IB2 = 1.67 Adc)

ÎÎÎÎ

—

ÎÎÎÎ

2.0

ÎÎÎ

µs

ÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 200 Vdc, IC = 10 A, Duty

Cycle

2.0%, tp = 100 µs)

(IB1 = IB2 = 1.67 Adc)

ÎÎÎÎ

—

ÎÎÎÎ

3.5

ÎÎÎ

µs

ÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

2.0%, tp = 100 µs)

(IB1 = IB2 = 1.67 Adc)

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

µs

*Indicates JEDEC Registered Data.

(1) Measured on a curve tracer (60 Hz full–wave rectified sine wave).

2N6251

3–106 Motorola Bipolar Power Transistor Device Data

INDUCTIVE TEST CIRCUIT

Rcoil

Lcoil

VCC

0.1

1N4937

TUT

Table 1. Test Conditions for Dynamic Performance

VCEO(sus) VCER(sus) RESISTIVE SWITCHING

INPUT

CONDITIONS

CIRCUIT

VALUES

TEST CIRCUITS

Lcoil = 42 mH

Rcoil = 0.7 Ω, fo = 60 Hz

VCC = 0 to 50 V

Lcoil = 14 mH

Rcoil = 0.05 Ω

VCC = 0 to 50 V

fo = 60 Hz

VCC = 200 V

RL = 20 Ω

t1 Adjusted to

Obtain IC

[

Lcoil (ICpk)

VCC

RESISTIVE TEST CIRCUITOUTPUT WAVEFORMS

+6.0 V

ES/b

4 V

IB1 = 2.0 A

+10 V

Lcoil = 50 µH, VCC = 11.5 V

Rcoil = 0.2 Ω

IC = 10 A

PW ≈ 100 µs

tr ≤ 5 ns

tf ≤ 50 ns

DUTY CYCLE ≤ 2%

+ 15 V

TIP41B

0.02

+6.0 V

39 1

50 51 51 4.7 1

VCL

IC(pk)

t1tf

VCE

NOTE: SET IC(pk) TO OBTAIN IC = 200 mA AT VCEO(sus) EQUAL TO RATED VALUE.

NOTE: ADJUST VClamp VOLTAGE FOR VCEO(sus) RATED VALUE.

+ 200 V

CURRENT

PROBE

TUT

–6.0 V

Figure 2. Thermal Response

t, TIME (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k500

JC(t) = r(t) R

JC = 1.0

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) Z

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01 SINGLE PULSE

0.1

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

300

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

5.0

3.0

1.0

0.5

0.3

0.05

5.0 7.0 10 20 30 70

TC = 25

C UNLESS NOTED

BONDING WIRE LIMIT

THERMAL LIMIT, SINGLE PULSE

SECOND BREAKDOWN LIMIT

0.2

0.1

IC, COLLECTOR CURRENT (AMP)

TC = 25

TC = 100

500

10 ms ms

50 ms

1.0

Figure 3. Active–Region Safe Operating Area

2.0

0.03 100 200 500

100

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 3 is based on TC = 25

C. TJ(pk) is

variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated

when TC

C. Second breakdown limitations do not

derate the same as thermal limitations. Allowable current at

the voltage shown on Figure 3 may be found at any case

temperature by using the appropriate curve on Figure 1.

TJ(pk) may be calculated from the data in Figure 2. At high

case temperatures, thermal limitations will reduce the power

that can be handled to values less than the limitations

imposed by second breakdown.

2N6251

3–107

Motorola Bipolar Power Transistor Device Data

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 4. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

100

Figure 5. Collector Saturation Region

IC, COLLECTOR CURRENT (AMP)

Figure 6. “On” Voltagae

V, TEMPERATURE COEFFICIENTS (mV/ C)

°θ

VB for VBE

VC for VCE(sat)

–55

C to 25

2.0

0.07

Figure 7. Temperature Coefficients

IB, BASE CURRENT (mA)

00.2 0.3 0.5 0.7 1.0 2.0 3.0 5.00.1

0.8

1.2

0.4

1.6

hFE, DC CURRENT GAIN

TJ = 150

–55

VCE = 3.0 V

7.0

5.0 VCE = 10 V

2.5

2.0

1.5

0.5

–0.5

–1.0

–1.5

–2.0

1.4

1.2

1.0

0.8

0.6

0.4

C to 150

–55

C to 25

1.0 2.0 3.0 5.0 20100.2 0.3 0.5 0.7 7.0 7.0

VBE(on) @ VCE = 3.0 V

VCE(sat) @ IC/IB = 5

V, VOLTAGE (VOLTS)

0.2

01.0 2.0 3.0 5.0 20100.2 0.3 0.5 0.7 7.0

*APPLIES FOR IC/IB

≤

hFE @ VCE

3.0 V

IC, COLLECTOR CURRENT (AMP)

1.0 2.0 3.0 5.0 20100.2 0.3 0.5 7.0

IC = 2.0 A 6.0 A 10 A 15A

TJ = 25

VBE(sat) @ IC/IB = 5.0 1.0

– 2.5

DC CHARACTERISTICS

RESISTIVE SWITCHING PERFORMANCE

t, TIME (ns)

Figure 8. Turn-on Time Figure 9. Turn-off Time

VCC = 200 V

IC/IB = 5.0

TJ = 25

0.02

td @ VBE(off) = 5.0 V

0.2 0.5 1.0 5.0 20100.05 0.1 2.0

3.0 k

2.0 k

1.0 k

700

500

300

200

100

t, TIME (ns)

3.0 k

2.0 k

1.0 k

700

500

300

200

100

10 k

7.0 k

5.0 k

VCC = 200 V

IC/IB = 5.0

IB1 = IB2

TJ = 25

0.02 0.2 0.5 1.0 5.0 20100.05 0.1 2.0

IC, COLLECTOR CURRENT (AMP)IC, COLLECTOR CURRENT (AMP)

2N6251

3–108 Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO–204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B––– 1.050 ––– 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N––– 0.830 ––– 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

–T–

SEATING

PLANE

2 PLD

0.13 (0.005) Y M

0.13 (0.005) T

–Q–

–Y–

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

2N6251

3–109

Motorola Bipolar Power Transistor Device Data

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2N6251/D

*2N6251/D*

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