2SA1740 / 2SC4548
Rev.0 I Page 1 of 4 I www.onsemi.com
Features
•High breakdown votlage.
•Adoption of MBIT process.
•Excellent hFE linearlity.
Specifications ( ) : 2SA1740
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (--)400 V
Collector-to-Emitter Voltage VCEO (--)400 V
Emitter-to-Base Voltage VEBO (--)5 V
Collector Current IC(--)200 mA
Collector Current (Pulse) ICP (--)400 mA
Collector Dissipation PC
Mounted on a ceramic board (250mm
2
✕0.8mm)
1.3 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Collector Cutoff Current ICBO VCB=(--)300V, IE=0A (--)0.1 µA
Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)0.1 µA
DC Current Gain hFE VCE=(--)10V, IC=(--)50mA 60* 200*
Marking 2SA1740 : AK Continued on next page.
2SC4548 : CN
*: The 2SA1740 / 2SC4548 are classified by 50mA hFE as follows:
Rank D E
hFE 60 to 120 100 to 200
Ordering number : EN3188A
2SA1740 / 2SC4548
PNP Epitaxial Planar Silicon Transistor
NPN Triple Diffuesd Planar Silicon Transistor
High-Voltage Driver Applications
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0 www.onsemi.com Publication Order Number:
2SA1740_2SC4548/D
2SA1740 / 2SC4548
Rev.0 I Page 2 of 4 I www.onsemi.com
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Gain-Bandwidth Product fTVCE=(--)30V, IC=(--)10mA 70 MHz
Output Capacitance Cob VCB=(--)30V, f=1MHz (5)4 pF
Reverse T ransfer Capacitance Cre VCB=(--)30V, f=1MHz (4)3 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)50mA, IB=(--)5mA (--0.8)0.6 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)50mA, IB=(--)5mA (--)1.0 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10µA, IE=0A (--)400 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞(--)400 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10µA, IC=0A (--)5 V
Turn-ON Time ton See specified Test Circuit. 0.25 µs
Turn-DFF Time toff See specified Test Circuit. 5.0 µs
Package Dimensions Switching Time Test Circuit
unit : mm (typ)
7007B-004
VR
RL
VCC=150V
VBE=--1V
IC=10IB1= --10IB2=50mA
RL=3kΩ, RB=200Ω at IC=50mA
For PNP, the polarity is reversed
++
INPUT OUTPUT
RB
100µF 470µF
PW=20µs
IB1
D.C.≤1%
IB2
50Ω
IC -- VBE IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- mA
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- mA
--20
00--0.2 --0.4 --0.6 --1.2--1.0--0.8 --1.4
ITR04445
--120
--40
--60
--80
--100
2SA1740
VCE=--10V
20
00 0.2 0.4 0.6 1.21.00.8 1.4
ITR04446
120
40
60
80
100
2SC4548
VCE=10V
Ta=70
°
C
25
°C
--30
°C
Ta=70
°
C
25°
C
--30
°C
2SA1740 / 2SC4548
Rev.0 I Page 3 of 4 I www.onsemi.com
SW Time -- IC
Collector Current, IC -- mA
Switching T ime, SW Time -- µs
SW Time -- IC
Collector Current, IC -- mA
Switching T ime, SW Time -- µs
5
0.1
1.0
7
10
2
3
5
7
3
7
2
5
27357 2 5
35
--10 --100
3
ITR04453
2SA1740
ton
tf
tstg
VCC=--150V
--10IB1=10IB2=IC
5
0.1
1.0
7
10
2
3
5
7
3
7
2
5
27357 2 5
35
10 100
3
ITR04454
2SC4548
ton
tf
tstg
VCC=--150V
10IB1=--10IB2=IC
hFE -- IChFE -- IC
Collector Current, IC -- mA
DC Current Gain, hFE
Collector Current, IC -- mA
DC Current Gain, hFE
VCE(sat) -- ICVCE(sat) -- IC
Collector Current, IC -- mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector Current, IC -- mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
VBE(sat) -- ICVBE(sat) -- IC
Collector Current, IC -- mA Collector Current, IC -- mA
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
5
100
10
7
5
7
3
2
3
2
5
--1.0 --10 --100 ITR04447
Ta=70°C
25°C
--30°C
23 577723 352
2SA1740
VCE=--10V
5
100
10
7
5
7
3
2
3
2
5
1.0 10 100 ITR04448
Ta=70°C
25
°C
--30
°C
23 577723 352
2SC4548
VCE=10V
ITR04452
7
5
2
3
2
7
5
5
3
--1.0
--0.1
2735 272357
--1.0 --10 --100
ITR04449
ITR04451
2SA1740
IC / IB=10
7
5
2
3
2
7
5
5
3
1.0
0.1
2735 272357
1.0 10 100
ITR04450
2SC4548
IC / IB=10
Ta=70
°
C
25
°
C, --30
°
C
--30
°
C
25
°
C
Ta=70°C
3
5
5
3
2
7
7
--1.0
2735 372 2357
--1.0 --10 --100
2SA1740
IC / IB=10
70°C
25
°
C
Ta=--30
°
C
3
5
5
3
2
7
7
1.0
2735 372 2357
1.0 10 100
2SC4548
IC / IB=10
70
°
C
25
°
C
Ta=--30
°
C
2SA1740 / 2SC4548
Rev.0 I Page 4 of 4 I www.onsemi.com
A S O PC -- Ta
Collector Current, IC -- mA
Collector-to-Emitter Voltage, VCE -- V
Collector Dissipation, PC -- W
Ambient Temperature, Ta
-- °C
0
0.4
0.6
1.6
0.2
1.0
1.2
1.4
0.8
020 6040 80 120100 160140
ITR04456
2SA1740 / 2SC4548 2SA1740 / 2SC4548
Mounted on a ceramic board (250mm2✕0.8mm)
5
10
1.0
100
7
7
2
7
5
3
2
7
5
3
2
3
5
23 77532535 10 100
2
ITR04455
1ms
DC operation
100ms
10ms
ICP=400mA
IC=200mA
For PNP, minus sign is omitted
Single pulse Ta=25°C
Mounted on a ceramic board (250mm2✕0.8mm)
2SA1740_2SC4548/D
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