September 2011 Doc ID 9241 Rev 11 1/22
22
STB11NM80, STF11NM80
STI11NM80, STP11NM80, STW11NM80
N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET
in D²PAK, TO-220FP, I²PAK, TO-220, TO-247
Features
■Low input capacitance and gate charge
■Low gate input resistance
■Best RDS(on)*Qg in the industry
Applications
■Switching applications
Description
These N-channel Power MOSFETs are
developed using STMicroelectronics'
revolutionary MDmesh™ technology, which
associates the multiple drain process with the
company's PowerMESH™ horizontal layout.
These devices offer extremely low on-resistance,
high dv/dt and excellent avalanche
characteristics. Utilizing ST's proprietary strip
technique, these Power MOSFETs boast an
overall dynamic performance which is superior to
similar products on the market.
Figure 1. Internal schematic diagram
Order codes VDSS
RDS(on)
max RDS(on)*QgID
STB11NM80
800 V < 0.40 Ω 14Ω*nC 11 A
STF11NM80
STI11NM80
STP11NM80
STW11NM80
TO-247
D²PAK
TO-220
TO-220FP
123
1
3
123
12
3
I²PAK
123
!-V
$
'
3
Table 1. Device summary
Order codes Marking Package Packaging
STB11NM80 B11NM80 D²PAK Tape and reel
STF11NM80 F11NM80 TO-220FP
Tu b e
STI11NM80 I11NM80 I²PAK
STP11NM80 P11NM80 TO-220
STW11NM80 W11NM80 TO-247
www.st.com
Contents STB/F/I/P/W11NM80
2/22 Doc ID 9241 Rev 11
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
STB/F/I/P/W11NM80 Electrical ratings
Doc ID 9241 Rev 11 3/22
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
D²PAK, I²PAK
TO-220, TO-247 TO-220FP
VDS Drain-source voltage (VGS = 0) 800 V
VGS Gate-source voltage ±30 V
IDDrain current (continuous) at TC = 25 °C 11 11 (1)
1. Limited only by the maximum temperature allowed
A
IDDrain current (continuous) at TC=100 °C 8 8 (1) A
IDM(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 44 44 (1) A
PTOT Total dissipation at TC = 25 °C 150 35 W
Derating factor 1.2 0.28 W/°C
VISO Insulation withstand voltage (DC) 2500 V
TJ
Tstg
Operating junction temperature
Storage temperature -65 to 150 °C
Table 3. Thermal data
Symbol Parameter
Value
Unit
D²PAK TO-220FP I²PAK TO-220 TO-247
Rthj-case
Thermal resistance junction-case
max 0.83 3.6 0.83 °C/W
Rthj-a
Thermal resistance junction-
ambient max 62.5 50 °C/W
Rthj-pcb(1)
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Thermal resistance junction-pcb
max 30 °C/W
Tl
Maximum lead temperature for
soldering purpose 300 °C
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
IAS
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max) 2.5 A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V) 400 mJ
Electrical characteristics STB/F/I/P/W11NM80
4/22 Doc ID 9241 Rev 11
2 Electrical characteristics
(TCASE= 25 °C unless otherwise specified)
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage (VGS = 0) ID = 250 µA 800 V
dv/dt (1)
1. Characteristic value at turn off on inductive load
Drain source voltage slope VDD = 640 V, ID = 11 A,
VGS = 10 V 30 V/ns
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 800 V,
VDS = 800 V @125°C
10
100
µA
µA
IGSS
Gate body leakage current
(VDS = 0) VGS = ±30 V 100 nA
VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 3 4 5 V
RDS(on)
Static drain-source on
resistance VGS= 10 V, ID= 5.5 A 0.35 0.40 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
gfs (1)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance VDS > ID(on) x RDS(on)max,
ID= 7.5 A -8- S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25 V, f=1 MHz,
VGS=0 -
1630
750
30
-
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=640 V, ID = 11 A
VGS =10 V
(see Figure 18)
-
43.6
11.6
21
-
nC
nC
nC
RgGate input resistance
f=1MHz Gate DC Bias=0
Test signal level=20 mV
open drain
-2.7- Ω
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD=400 V, ID= 5.5 A,
RG=4.7 Ω, VGS=10 V
(see Figure 17)
-
22
17
46
15
-
ns
ns
ns
ns
STB/F/I/P/W11NM80 Electrical characteristics
Doc ID 9241 Rev 11 5/22
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD Source-drain current -11 A
ISDM(1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) 44 A
VSD(2)
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage ISD=11 A, VGS=0 - 0.86 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=11 A,
di/dt = 100 A/µs,
VDD= 50 V
-
612
7.22
23.6
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=11 A,
di/dt = 100 A/µs,
VDD= 50 V, Tj=150 °C
-
970
11.25
23.2
ns
µC
A
Electrical characteristics STB/F/I/P/W11NM80
6/22 Doc ID 9241 Rev 11
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for D²PAK,
I²PAK, TO-220, TO-247
Figure 3. Thermal impedance for D²PAK,
I²PAK, TO-220, TO-247
Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP
Figure 6. Output characteristics Figure 7. Output characteristics @ TJ=150 °C
I
D
10
1
0.1
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
10µs
100µs
1ms
10ms
1µs
Tj=150°C
Tc=25°C
Sinlge
pulse
AM03328v1
I
D
10
1
0.1
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
10µs
100µs
1ms
10ms
1µs
Tj=150°C
Tc=25°C
Sinlge
pulse
0.01
AM03329v1
STB/F/I/P/W11NM80 Electrical characteristics
Doc ID 9241 Rev 11 7/22
Figure 8. Transfer characteristics Figure 9. Transconductance
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage
vs temperature
Figure 13. Static drain-source on resistance
Electrical characteristics STB/F/I/P/W11NM80
8/22 Doc ID 9241 Rev 11
Figure 14. Source-drain diode forward
characteristics
Figure 15. Normalized on resistance vs
temperature
Figure 16. Normalized BVDSS vs temperature
STB/F/I/P/W11NM80 Test circuits
Doc ID 9241 Rev 11 9/22
3 Test circuits
Figure 17. Switching times test circuit for
resistive load
Figure 18. Gate charge test circuit
Figure 19. Test circuit for inductive load
switching and diode recovery times
Figure 20. Unclamped inductive load test
circuit
Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform
Package mechanical data STB/F/I/P/W11NM80
10/22 Doc ID 9241 Rev 11
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
STB/F/I/P/W11NM80 Package mechanical data
Doc ID 9241 Rev 11 11/22
Table 8. D²PAK (TO-263) mechanical data
Dim.
mm
Min. Typ. Max.
A 4.40 4.60
A1 0.03 0.23
b 0.70 0.93
b2 1.14 1.70
c 0.45 0.60
c2 1.23 1.36
D 8.95 9.35
D1 7.50
E10 10.40
E1 8.50
e2.54
e1 4.88 5.28
H15 15.85
J1 2.49 2.69
L 2.29 2.79
L1 1.27 1.40
L2 1.30 1.75
R0.4
V2 0° 8°
Package mechanical data STB/F/I/P/W11NM80
12/22 Doc ID 9241 Rev 11
Figure 23. D²PAK (TO-263) drawing
Figure 24. D²PAK footprint(a)
a. All dimension are in millimeters
0079457_S
16.90
12.20
9.75
3.50
5.08
1.60
Footprint
STB/F/I/P/W11NM80 Package mechanical data
Doc ID 9241 Rev 11 13/22
Figure 25. TO-220FP drawing
Table 9. TO-220FP mechanical data
Dim.
mm
Min. Typ. Max.
A4.4 4.6
B2.5 2.7
D 2.5 2.75
E0.45 0.7
F0.75 1
F1 1.15 1.70
F2 1.15 1.70
G4.95 5.2
G1 2.4 2.7
H 10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2
7012510_Rev_K
A
B
H
Dia
L7
D
E
L6 L5
L2
L3
L4
F1 F2
F
G
G1
Package mechanical data STB/F/I/P/W11NM80
14/22 Doc ID 9241 Rev 11
Figure 26. I²PAK (TO-262) drawing
Table 10. I²PAK (TO-262) mechanical data
DIM.
mm.
min. typ max.
A 4.40 4.60
A1 2.40 2.72
b 0.61 0.88
b1 1.14 1.70
c 0.49 0.70
c2 1.23 1.32
D 8.95 9.35
e 2.40 2.70
e1 4.95 5.15
E 10 10.40
L13 14
L1 3.50 3.93
L2 1.27 1.40
0004982_Rev_H
STB/F/I/P/W11NM80 Package mechanical data
Doc ID 9241 Rev 11 15/22
Table 11. TO-220 type A mechanical data
Dim.
mm
Min. Typ. Max.
A 4.40 4.60
b 0.61 0.88
b1 1.14 1.70
c 0.48 0.70
D 15.25 15.75
D1 1.27
E10 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L13 14
L1 3.50 3.93
L20 16.40
L30 28.90
∅P 3.75 3.85
Q 2.65 2.95
Package mechanical data STB/F/I/P/W11NM80
16/22 Doc ID 9241 Rev 11
Figure 27. TO-220 type A drawing
0015988_typeA_Rev_S
STB/F/I/P/W11NM80 Package mechanical data
Doc ID 9241 Rev 11 17/22
Table 12. TO-247 mechanical data
Dim.
mm
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e5.45
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S5.50
Package mechanical data STB/F/I/P/W11NM80
18/22 Doc ID 9241 Rev 11
Figure 28. TO-247 drawing
0075325_F
STB/F/I/P/W11NM80 Packaging mechanical data
Doc ID 9241 Rev 11 19/22
5 Packaging mechanical data
Table 13. D²PAK (TO-263) tape and reel mechanical data
Tape Reel
Dim.
mm
Dim.
mm
Min. Max. Min. Max.
A0 10.5 10.7 A 330
B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base qty 1000
P2 1.9 2.1 Bulk qty 1000
R50
T 0.25 0.35
W 23.7 24.3
Packaging mechanical data STB/F/I/P/W11NM80
20/22 Doc ID 9241 Rev 11
Figure 29. Tape
Figure 30. Reel
P1
A0 D1
P0
F
W
E
D
B0
K0
T
User direction of feed
P2
10 pitches cumulative
tolerance on tape +/- 0.2 mm
User direction of feed
R
Bending radius
Top cover
tape
AM08852v2
A
D
B
Full radius G measured at hub
C
N
REEL DIMENSIONS
40mm min.
Access hole
At slot location
T
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
STB/F/I/P/W11NM80 Revision history
Doc ID 9241 Rev 11 21/22
6 Revision history
Table 14. Document revision history
Date Revision Changes
30-Sep-2004 4 Preliminary version
26-Nov-2005 5 Complete version
07-Apr-2006 6 Modified value on Figure 8
15-May-2006 7 New dv/dt value on Ta ble 5
20-Jul-2006 8 The document has been reformatted
20-Dec-2007 9 Updated ID value on Table 2: Absolute maximum ratings
24-Mar-2010 10 Inserted dv/dt value in Table 2: Absolute maximum ratings
12-Sep-2011 11 Added new package and mechanical data : I²PAK
Minor text changes
STB/F/I/P/W11NM80
22/22 Doc ID 9241 Rev 11
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2011 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com