DATA SHEET
SILICON TRANSISTOR
NE68039 / 2SC4095
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
DATA SHEET
Document No. P10367EJ2V1DS00 (2nd edition)
Date Published March 1997 N
DESCRIPTION
The NE68039 / 2SC4095 is an NPN epitaxial silicon transistor
designed for use in low-noise and small signal amplifiers from VHF
band to UHF band. NE68039 / 2SC4095 features excellent power
gain with very low-noise figures. NE68039 / 2SC4095 employs
direct nitiride passivated base surface process (DNP process) which is
a proprietary new fabrication technique which provides excellent
noise figures at high current values. This allows excellent associated
gain and very wide dynamic range.
FEATURES
• NF = 1.8 dB TYP. @ f = 2.0 GHz, VCE = 6 V, IC = 5 mA
•
S21e
2 = 9.5 dB TYP. @ f = 2.0 GHz, VCE = 6 V, IC = 10 mA
ABSOLUTE MAXIMUM RATINGS (TA = 25
C)
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 10 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC35 mA
Total Power Dissipation PT200 mW
Junction Temperature Tj150
C
Storage Temperature Tstg
65 to +150
C
ELECTRICAL CHARACTERISTICS (TA = 25
C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current ICBO 1.0
AV
CB = 10 V, IE = 0
Emitter Cutoff Current IEBO 1.0
AV
EB = 1 V, IC = 0
DC Current Gain hFE 50 100 250 VCE = 6 V, IC = 10 mA
Gain Bandwidth Product fT10 GHz VCE = 6 V, IC = 10 mA f = 1.0 GHz
Feed-Back Capacitance Cre 0.25 0.8 pF VCB = 10 V, IE = 0, f = 1.0 MHz
Insertion Power Gain
S21e
27.5 9.5 dB VCE = 6 V, IC = 10 mA, f = 2.0 GHz
Maximum Available Gain MAG 12 dB VCE = 6 V, IC = 10 mA, f = 2.0 GHz
Noise Figure NF 1.8 3.0 dB VCE = 6 V, IC = 5 mA, f = 2.0 GHz
hFE Classification
Class R46/RDF * R47/RDG * R48/RDH *
Marking R46 R47 R48
hFE 50 to 100 80 to 160 125 to 250
* Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
PIN CONNECTIONS
1.
2.
3.
4.
Collector
Emitter
Base
Emitter
5°5°
5°5°
0 to 0.1
0.8
2.9±0.2
(1.8)
(1.9)
0.950.85
1.1+0.2
−0.1
0.16 +0.1
−0.06 0.4
4
1
3
2
+0.1
−0.05
2.8+0.2
−0.3
1.5+0.2
−0.1
0.6+0.1
−0.05
0.4+0.1
−0.05
0.4+0.1
−0.05
JEITA
Part No.
DISCONTINUED
2
NE68039 / 2SC4095
TYPICAL CHARACTERISTICS (TA = 25 C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
100
0
10
20
50
100
200
50
1 5 10 500.5
100 150
T
A
-Ambient Temperature-°C
I
C
-Collector Current-mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
P
T
-Total Power Dissipation-mW
h
FE
-DC Current Gain
V
CE
= 6 V
I
C
-Collector Current-mA
INSERTION GAIN vs.
COLLECTOR CURRENT
|S
21e
|
2
-Insertion Gain-dB
0.06
0.2
0.1
1
1.0
1 2 5 10 20
V
CB
-Collector to Base Voltage-V
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
C
re
-Feed-back Capacitance-pF
f = 1.0 GHz
0
2
4
6
10
12
14
16
18
8
0.2 10.5 2 5 10 20 30
0
10
20
30
0.1 0.2 0.5 1.0 2.0 3.0
f-Frequency-GHz
MAXIMUM AVAILABLE GAIN, INSERTION
GAIN vs. FREQUENCY
|S
21e
|
2
-Insetion Gain -dB
MAG-Maximum Available Gain-dB
V
CE
= 6 V
f
C
= 10 mA
5
2
10
30
20
1 2 5 10 20 30
I
C
-Collector Current-mA
GAIN BANDWIDTH PRODUUT vs.
COLLECTOR CURRENT
f
T
-Gain Bandwidth Product-MHz
V
CE
= 6 V
Free Air
|S
21e
|
2
MAG
V
CE
= 6 V
f = 1.0 GHz
f = 2.0 GHz
0.5
DISCONTINUED
3
0
2
1
5
4
3
7
6
0.5 1 5 10 50 70
I
C
-Collector Current-mA
NOISE FIGURE vs.
COLLECTOR CURRENT
NF-Noise Figure-dB
V
CE
= 10 V
f = 2.0 GHz
S-PARAMETER
VCE = 6.0 V, IC = 3.0 mA, ZO = 50
f (MHz) S11 S11 S21 S21 S12 S12 S22 S22
200
400
600
800
1000
1200
1400
1600
1800
2000
0.870
0.747
0.628
0.516
0.400
0.327
0.262
0.231
0.205
0.196
24.2
44.6
59.8
75.1
87.7
103.4
118.7
135.5
155.3
170.6
9.193
7.780
7.058
5.675
5.180
4.269
3.950
3.406
3.290
2.867
155.6
136.6
122.1
109.4
99.6
89.8
81.7
74.0
66.4
60.8
0.031
0.040
0.064
0.066
0.090
0.084
0.106
0.105
0.126
0.124
53.6
66.2
54.7
56.0
49.4
47.9
48.5
42.1
46.4
40.9
0.946
0.876
0.816
0.743
0.689
0.654
0.604
0.581
0.548
0.529
12.8
20.7
26.4
30.9
33.0
35.7
37.7
41.5
43.9
47.1
VCE 6.0 V, IC = 10.0 mA, ZO = 50
f (MHz) S11 S11 S21 S21 S12 S12 S22 S22
200
400
600
800
1000
1200
1400
1600
1800
2000
0.671
0.458
0.319
.0239
0.172
0.149
0.131
0.132
0.150
0.163
43.5
68.7
83.7
101.9
119.3
141.4
163.0
179.6
160.0
150.1
18.685
12.702
9.895
7.275
6.261
5.038
4.597
3.927
3.743
3.233
137.9
115.2
102.8
92.3
85.1
77.4
71.0
64.8
58.8
54.5
0.023
0.029
0.046
0.049
0.067
0.070
0.088
0.094
0.113
0.115
52.1
62.2
54.4
63.1
58.6
57.9
56.1
54.0
55.3
50.0
0.832
0.710
0.649
0.600
0.578
0.559
0.527
0.514
0.494
0.478
19.0
23.9
26.0
27.5
28.4
30.3
32.5
35.7
38.1
41.6
NE68039 / 2SC4095
DISCONTINUED
4
S-PARAMETER
A
N
G
L
E
O
F
R
E
F
L
E
C
T
I
O
N
C
O
E
F
F
C
I
E
N
T
I
N
D
E
G
R
E
E
S
20
30
40
50
0060
70
80
90
100
110
120
130
140
150
−160
−150
−140
−130
−120
−110
−100
−90
−80
−70
−60
−50
−40
−30
−20
−10
0
10
0.28
0.22
0.30
0.20
0.32
0.18
0.34
0.16
0.36
0.14
0.38
0.12
0.40
0.10
0.42
0.08
0.44
0.06
0.46
0.04
0.21
0.19
0.17
0.15
0.13
0.11
0.09
0.07
0.05
0.03
0.29
0.31
0.33
0.35
0.37
0.39
0.41
0.43
0.45
0.47
0.02
0.48
0.01
0.49
0
0
0.49
0.01
0.48
0.02
0.47
0.03
0.46
0.04
0.45
0.05
0.44
0.06
0.43
0.07
0.42
0.08
0.41
0.09
0.40
0.10
0.39
0.11
0.38
0.12
0.37
0.13
0.36
0.14
0.35
0.15
0.34
0.16
0.33
0.17
0.32
0.18
0.31
0.19
0.30
0.20
0.29
0.21
0.28
0.22
0.27
0.23
0.26
0.24
52.0
52.0
0.24
0.26
0.23
0.27
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
L
O
A
D
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
G
E
N
E
R
A
T
O
R
2.0
50
10
6.0
4.0
3.0
1.8
1.6
1.4
1.2
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.1
(
+JX
––––
Z
O
)
0.2
0.4
0.6
0.8
1.0
0.8
0.7
0.6
0.3
0.2
0.1
0.2
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.4
0.5
5.0
10
50
3.0
4.0
1.8
2.0
1.2
0.1
0.9
1.4
1.6
REACTANCE COMPONENT
(
R
––––
Z
O
)
NE
G
AT
IVE
R
E
AC
TA
N
CE
C
OM
PO
NE
NT
P
OS
ITIVE
R
EA
C
TA
NC
E
CO
M
P
ON
EN
T
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
0
(
−JX
––––
Z
O
)
20
20
0.2
0.4
0.6
0.8
1.0
S
11e
, S
22e
-FREQUENCY
S
21e
-FREQUENCY
90°
0°
30°
−30°
60°
−60°
180°
150°
−150°
120°
−120°
−90°
40 8 12 16 20
S
21e
2GHz
90°
0°
30°
−30°
60°
−60°
180°
150°
−150°
120°
−120°
−90°
0.040 0.08 0.12 0.16 0.2
S
12e
CONDITION V
CE
= 6 V, I
C
= 10/3 mA, freq. = 0.2 to 2 GHz (Step 200 MHz)
CONDITION V
CE
= 6 V
I
C
= 10/3 mA
freq. = 0.2 to 2 GHz (Step 200 MHz)
S
12e
-FREQUENCY
CONDITION V
CE
= 6 V
I
C
= 10/3 mA
freq. = 0.2 to 2 GHz (Step 200 MHz)
0.2 GHz
0.2 GHz
2 GHz
2 GHz
I
C
= 3 mA
I
C
= 3 mA
I
C
= 10 mA
I
C
= 10 mA
I
C
= 3 mA I
C
= 3 mA
S
11e
S
22e
I
C
= 10 mA
I
C
= 10 mA
0.2 GHz
0.2 GHz 2GHz
NE68039 / 2SC4095
DISCONTINUED
5
RECOMMENDED SOLDERING CONDTITIONS
The following conditions (see table below) must be met then soldering this product. Please consult with our sales
offices in case other soldering process is used, or in case soldering is done under different contions.
TYPES OF SURFACE MOUNT DEVICE
For more details, refer to our document “SMT MANUAL” (IEI-1207).
NE68039 / 2SC4095
lobmySsnoitidnoc gniredloSssecorp gniredloS
Infrared ray reflow Peak packageʼs surface temperature: 230 C or below,
Reflow time: 30 seconds or below (210 C or higher),
Number of reflow process: 1, Exposure limit*: None
IR30-00-1
512 :erutarepmet ecafrus sʼegakcap kaePSPV C or below,
Reflow time: 40 seconds or below (200 C or higher),
Number of reflow process: 1, Exposure limit*: None
VP15-00-1
Wave solderingSolder temperature:260 C or below,
Flow time: 10 seconds or below,
Number of reflow process: 1, Exposure limit*: None
WS60-00-1
Partial heating method Terminal temperature:300 C or below,
Flow time: 3 seconds or below,
Exposure limit*: None
*:Exposure limit before soldering after dry-pack package is opened.
Storage conditions: 25 C and relative humidity at 65 % or less.
Note: Do not apply more than a single process at once, except for “Partial heating method”.
NE68039 / 2SC4095
DISCONTINUED
NOTICE
1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and
application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California
Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits,
software, or information.
2. California Eastern Laboratories has used reasonable care in preparing the information included in this document, but California Eastern Laboratories does
not warrant that such information is error free. California Eastern Laboratories and Renesas Electronics assumes no liability whatsoever for any damages
incurred by you resulting from errors in or omissions from the information included herein.
3. California Eastern Laboratories and Renesas Electronics do not assume any liability for infringement of patents, copyrights, or other intellectual property
rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express,
implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of California Eastern Laboratories or Renesas
Electronics or others.
4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. California Eastern
Laboratories and Renesas Electronics assume no responsibility for any losses incurred by you or third parties arising from such alteration, modication, copy
or otherwise misappropriation of Renesas Electronics product.
5. Renesas Electronics products are classied according to the following two quality grades: “Standard” and “High Quality”. The recommended applications
for each Renesas Electronics product depends on the product’s quality grade, as indicated below. “Standard”: Computers; ofce equipment; communications
equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and
industrial robots etc. “High Quality”: Transportation equipment (automobiles, trains, ships, etc.); trafc control systems; anti-disaster systems; anti-crime
systems; and safety equipment etc. Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct
threat to human life or bodily injury (articial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear
reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it in a particular
application. You may not use any Renesas Electronics product for any application for which it is not intended. California Eastern Laboratories and Renesas
Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product
for which the product is not intended by California Eastern Laboratories or Renesas Electronics.
6. You should use the Renesas Electronics products described in this document within the range specied by California Eastern Laboratories, especially with
respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product
characteristics. California Eastern Laboratories shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products
beyond such specied ranges.
7. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specic characteristics such as
the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation
resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by
re in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy,
re control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of
microcomputer software alone is very difcult, please evaluate the safety of the nal products or systems manufactured by you.
8. Please contact a California Eastern Laboratories sales ofce for details as to environmental matters such as the environmental compatibility of each Renesas
Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of
controlled substances, including without limitation, the EU RoHS Directive. California Eastern Laboratories and Renesas Electronics assume no liability for
damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
9. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited
under any applicable domestic or foreign laws or regulations. You should not use Renesas Electronics products or technology described in this document
for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. When
exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and
regulations and follow the procedures required by such laws and regulations.
10. It is the responsibility of the buyer or distributor of California Eastern Laboratories, who distributes, disposes of, or otherwise places the Renesas Electronics
product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, California Eastern Laboratories and
Renesas Electronics assume no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics products.
11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of California Eastern Laboratories.
12. Please contact a California Eastern Laboratories sales ofce if you have any questions regarding the information contained in this document or Renesas
Electronics products, or if you have any other inquiries.
NOTE 1: “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
NOTE 2: “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
NOTE 3: Products and product information are subject to change without notice.
CEL Headquarters • 4590 Patrick Henry Drive, Santa Clara, CA 95054 • Phone (408) 919-2500 • www.cel.com
For a complete list of sales ofces, representatives and distributors,
Please visit our website: www.cel.com/contactus
DISCONTINUED
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
CEL:
NE68039-T1-A 2SC4095-T1-A 2SC4095-A