BSM150GB170DN2 E3166 IGBT Power Module * Half-bridge * Including fast free-wheeling diodes * Enlarged diode area * Package with insulated metal base plate * RG on,min = 10 Ohm Type VCE IC BSM150GB170DN2 E3166 1700V 220A Package Ordering Code HALF-BRIDGE 2 C67070-A2709-A67 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 k Values 1700 Unit V 1700 Gate-emitter voltage VGE DC collector current IC 20 A TC = 25 C 220 TC = 80 C 150 Pulsed collector current, tp = 1 ms ICpuls TC = 25 C 440 TC = 80 C 300 Power dissipation per IGBT W Ptot TC = 25 C 1250 Chip temperature Tj + 150 Storage temperature Tstg Thermal resistance, chip case RthJC 0.1 Diode thermal resistance, chip case RthJCD 0.21 Insulation test voltage, t = 1min. Vis Creepage distance C -40 ... + 125 K/W 4000 Vac - 20 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - 1 sec 40 / 125 / 56 Oct-27-1997 BSM150GB170DN2 E3166 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage V VGE(th) VGE = VCE, IC = 10 mA 4.8 5.5 6.2 VGE = 15 V, IC = 150 A, Tj = 25 C - 3.4 3.9 VGE = 15 V, IC = 150 A, Tj = 125 C - 4.6 5.3 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) mA ICES VCE = 1700 V, VGE = 0 V, Tj = 25 C - 1 1.5 VCE = 1700 V, VGE = 0 V, Tj = 125 C - 4 - Gate-emitter leakage current nA IGES VGE = 20 V, VCE = 0 V - - 400 AC Characteristics Transconductance VCE = 20 V, IC = 150 A Input capacitance 54 nF - 20 - - 2 - - 0.55 - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S gfs Crss VCE = 25 V, VGE = 0 V, f = 1 MHz 2 Oct-27-1997 BSM150GB170DN2 E3166 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time td(on) ns VCC = 1200 V, VGE = 15 V, IC = 150 A RGon = 10 Rise time - 520 1000 - 200 400 - 1200 1800 - 110 160 tr VCC = 1200 V, VGE = 15 V, IC = 150 A RGon = 10 Turn-off delay time td(off) VCC = 1200 V, VGE = -15 V, IC = 150 A RGoff = 10 Fall time tf VCC = 1200 V, VGE = -15 V, IC = 150 A RGoff = 10 Free-Wheel Diode Diode forward voltage V VF IF = 150 A, VGE = 0 V, Tj = 25 C - 2 2.5 IF = 150 A, VGE = 0 V, Tj = 125 C - 1.8 - Reverse recovery time s trr IF = 150 A, VR = -1200 V, VGE = 0 V diF/dt = -1200 A/s, Tj = 125 C Reverse recovery charge - 0.7 C Qrr IF = 150 A, VR = -1200 V, VGE = 0 V diF/dt = -1200 A/s Tj = 25 C - 14 - Tj = 125 C - 50 - 3 Oct-27-1997 BSM150GB170DN2 E3166 Power dissipation Ptot = (TC) parameter: Tj 150 C Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 3 1300 t = 1.5s p W A 1100 Ptot IC 1000 10 s 10 2 900 100 s 800 700 10 1 1 ms 600 500 10 ms 400 10 0 300 DC 200 100 0 0 20 40 60 80 100 120 C 10 -1 0 10 160 10 1 10 2 10 3 TC V VCE Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C Transient thermal impedance Zth JC = (tp) parameter: D = tp / T IGBT 10 0 240 A K/W 200 IC ZthJC 180 10 -1 160 140 10 -2 120 D = 0.50 100 0.20 80 0.10 10 -3 60 0.05 single pulse 0.02 40 0.01 20 0 0 20 40 60 80 100 120 C 160 TC 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 Oct-27-1997 BSM150GB170DN2 E3166 Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 s, Tj = 25 C parameter: tp = 80 s, Tj = 125 C 300 300 A A 260 IC 240 220 200 260 17V 15V 13V 11V 9V 7V IC 240 220 200 180 180 160 160 140 140 120 120 100 100 80 80 60 60 40 40 20 0 20 0 0.0 1.0 2.0 3.0 4.0 V 6.0 VCE 0.0 17V 15V 13V 11V 9V 7V 1.0 2.0 3.0 4.0 V 6.0 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 600 A 500 IC 450 400 350 300 250 200 150 100 50 0 0 2 4 6 8 10 V 14 VGE 5 Oct-27-1997 BSM150GB170DN2 E3166 Typ. capacitances Typ. gate charge VGE = (QGate) parameter: IC puls = 150 A C = f (VCE) parameter: VGE = 0, f = 1 MHz 10 2 20 V nF VGE 16 C 800 V 14 1200 V Ciss 10 1 12 10 Coss 8 10 0 6 Crss 4 2 0 0.0 0.4 0.8 1.2 1.6 C 10 -1 0 2.2 5 10 15 20 25 30 V VCE QGate 40 Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V, tp 1 ms, L < 25 nH ICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tp 10 s, L < 25 nH 2.5 12 ICpulsIC ICsc/IC di/dt = 1000A/s 3000A/s 5000A/s 8 di/dt = 1000A/s 3000A/s 5000A/s 1.5 6 1.0 4 allowed numbers of short circuit: <1000 time between short 2 circuit: >1s 0.5 0.0 0 200 400 600 800 1000 1200 1400 V 1800 VCE 6 0 0 200 400 600 800 1000 1200 1400 V 1800 VCE Oct-27-1997 BSM150GB170DN2 E3166 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125C t = f (RG) , inductive load , Tj = 125C par.: VCE = 1200 V, VGE = 15 V, RG = 10 par.: VCE = 1200 V, VGE = 15 V, IC = 150 A 10 4 10 4 ns ns t tdoff t tdoff 10 3 10 3 tdon tdon tr tr tf 10 2 10 1 0 50 100 150 200 250 A IC tf 10 2 10 1 0 350 10 20 30 40 60 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125C E = f (RG) , inductive load , Tj = 125C par.: VCE = 1200 V, VGE = 15 V, RG = 10 par.: VCE = 1200 V, VGE = 15 V, IC = 150 A 400 400 mWs mWs Eon E E 300 300 250 250 200 200 150 150 Eoff 100 100 50 50 0 0 50 100 150 200 250 A IC Eon 350 7 0 0 Eoff 10 20 30 40 60 RG Oct-27-1997 BSM150GB170DN2 E3166 Forward characteristics of fast recovery Transient thermal impedance Zth JC = (tp) parameter: D = tp / T reverse diode IF = f(VF) parameter: Tj 10 0 300 A K/W 260 IF Diode Tj=125C 240 Tj=25C ZthJC 10 -1 220 200 10 -2 180 160 D = 0.50 140 10 -3 120 0.20 0.10 100 0.05 80 single pulse 10 60 0.02 -4 0.01 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 V VF 3.5 10 -5 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 8 Oct-27-1997 BSM150GB170DN2 E3166 Circuit Diagram Package Outlines Dimensions in mm Weight: 420 g 9 Oct-27-1997