IXTR90P20P - IXYS - Datasheet.Directory

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C - 200 V

VDGR TJ= 25°C to 150°C, RGS = 1MΩ- 200 V

VGSS Continuous ±20 V

VGSM Transient ±30 V

ID25 TC= 25°C - 53 A

IDM TC= 25°C, Pulse Width Limited by TJM - 270 A

IATC= 25°C - 90 A

EAS TC= 25°C 3.5 J

dV/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns

PDTC= 25°C 312 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TL1.6mm (0.062 in.) from Case for 10s 300 °C

TSOLD Plastic Body for 10s 260 °C

VISOL 50/60 HZ , RMS t = 1min 2500 V

IISOL ≤ 1mA t = 1s 3000 V

MdMounting Force 20..120/4.5..27 N/lb.

Weight 6 g

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = - 250μA - 200 V

VGS(th) VDS = VGS, ID = -1mA - 2.0 - 4.0 V

IGSS VGS = ±20V, VDS = 0V ±100 nA

IDSS VDS = VDSS , VGS= 0V - 50 μA

TJ = 125°C - 250 μA

RDS(on) VGS = -10V, ID = - 45A, Note 1 48 mΩ

PolarPTM

Power MOSFET

P-Channel Enhancement Mode

Avalanche Rated

IXTR90P20P VDSS = - 200V

ID25 = - 53A

RDS(on) ≤≤

≤≤

≤ 48mΩΩ

ΩΩ

Ω

G = Gate D = Drain

S = Source

Isolated Tab

ISOPLUS247

E153432

DS99932B(03/09)

Features

zSilicon chip on Direct-Copper Bond

(DCB) Substrate

- UL Recognized Package

- Isolated Mounting Surface

- 2500V Electrical Isolation

zAvalanche Rated

zFast Intrinsic Diode

zThe Rugged PolarPTM Process

zLow QG

zLow Drain-to-Tab Capacitance

zLow Package Inductance

Advantages

zEasy to Mount

zSpace Savings

zHigh Power Density

Applications

zHigh-Side Switches

zPush Pull Amplifiers

zDC Choppers

zAutomatic Test Equipment

zCurrent Regulators

IXTR90P20P

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

gfs VDS = -10V, ID = - 45A, Note 1 30 51 S

Ciss 12 nF

Coss VGS = 0V, VDS = - 25V, f = 1MHz 2210 pF

Crss 250 pF

td(on) 32 ns

tr 60 ns

td(off) 89 ns

tf 28 ns

Qg(on) 205 nC

Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = - 45A 45 nC

Qgd 80 nC

RthJC 0.40 °C/W

RthCS 0.15 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

ISVGS = 0V - 90 A

ISM Repetitive, Pulse Width Limited by TJM - 360 A

VSD IF = - 45A, VGS = 0V, Note 1 - 3.2 V

trr 315 ns

QRM 6.6 μC

IRM - 42 A

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.

Resistive Switching Times

VGS = -10V, VDS = 0.5 • VDSS, ID = - 45A

RG = 1Ω (External)

ISOPLUS247 (IXTR) Outline

IF = - 45A, -di/dt = -150A/μs

VR = -100V, VGS = 0V

Fig. 6. Maximum Drain Current vs.

Case Temper atu r e

-60

-55

-50

-45

-40

-35

-30

-25

-20

-15

-10

-5

0-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

I

D

- Am peres

IXTR90P20P

Fi g . 1. Ou tp u t C h ar acter isti c s

@ 25ºC

-90

-80

-70

-60

-50

-40

-30

-20

-10

0-4.0-3.5-3.0-2.5-2.0-1.5-1.0-0.50.0

V

DS

- Vo lt s

I

D

- A mp ere s

V

GS

= - 10V

- 9V

- 8V

- 5

V

- 6

V

- 7

V

Fi g . 2. Exten d ed Ou tp u t C h ar acteri sti cs

@ 25º C

-240

-210

-180

-150

-120

-90

-60

-30

0-30-27-24-21-18-15-12-9-6-30

V

DS

- Volt s

I

D

- A mpe re s

V

GS

= - 10V

- 9V

- 8

V

- 6

V

- 7

V

- 5

V

Fig. 3. Outp ut Characteristics

@ 125ºC

-90

-80

-70

-60

-50

-40

-30

-20

-10

0-8-7-6-5-4-3-2-10

V

DS

- Volt s

I

D

- Am peres

V

GS

= -10V

- 9V

- 8V

- 6

V

- 5

V

- 7

V

Fig. 4. R

DS(on)

Normalized to I

D

= - 45A vs.

Junction Temperature

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Cent igrade

R

DS(on)

- No rm a lize d

V

GS

= - 10V

I

D

= - 90

A

I

D

= - 45

A

Fig. 5. R

DS(on)

Normalized to I

D

= - 45A vs.

Drain Current

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

-240-210-180-150-120-90-60-300

I

D

- Amperes

R

DS(on)

- N orma lized

V

GS

= -10V

T

J

= 25ºC

T

J

= 125ºC

IXTR90P20P

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Fi g . 7. In p u t Admi ttance

-120

-100

-80

-60

-40

-20

0-7.0-6.5-6.0-5.5-5.0-4.5-4.0-3.5-3.0

V

GS

- Vo lt s

I

D

- Am peres

T

J

= - 40ºC

25ºC

125ºC

Fi g. 8. Tr an scon du ctan ce

0

10

20

30

40

50

60

70

80

90

100

-140-120-100-80-60-40-200

I

D

- Amp eres

g

f s

- Siemens

T

J

= - 40ºC

25ºC

125ºC

Fig. 9. Forward Voltage Drop of

Intr i n si c D io d e

-270

-240

-210

-180

-150

-120

-90

-60

-30

0-4.5-4.0-3.5-3.0-2.5-2.0-1.5-1.0-0.5

V

SD

- Volts

I

S

- Am peres

T

J

= 125ºC

T

J

= 25ºC

Fig. 10. Gate Charge

-10

-9

-8

-7

-6

-5

-4

-3

-2

-1

00 20 40 60 80 100 120 140 160 180 200 220

Q

G

- NanoCoulomb s

V

GS

- V o lts

V

DS

= -100V

I

D

= - 45A

I

G

= -1mA

Fig. 11. Capacitance

100

1,000

10,000

100,000

-40-35-30-25-20-15-10-50

V

DS

- Vo lt s

Capacitance - PicoFarads

f

= 1MHz

Ciss

Crss

Coss

Fig. 12. Forward-Bias Safe Operating Area

0.1

1.0

10.0

100.0

1,000.0

1 10 100 1000

V

DS

- Volts

I

D

- A mp ere s

T

J

= 150ºC

T

C

= 25ºC

Single Pulse

25µs

1ms

100µs

R

DS(on)

Limit

10ms

DC

-

--- -

100ms

-

Fi g. 13. Maxi mum Transi en t Th er mal I mped an ce

0.001

0.010

0.100

1.000

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W

IXTR90P20P