KE C SEMICONDUCTOR MMBTAO06 KOREA ELECTRONICS CO.,LTD. TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. DIM MILLIMETERS A 2.930.20 MAXIMUM RATINGS (Ta=25C) ee 0.16 CHARACTERISTIC SYMBOL | RATING | UNIT =| eansoa0 azn G 1.90 Collector-Base Voltage Vcso 80 Vv r 354010005 K 0.00 0.10 Collector-Emitter Voltage Vero 80 V P P L 0.55 -l -\ M 0.20 MIN . N 1.00+0.20/-0.10 Emitter-Base Voltage Vigo 6 Vv eb Si AL 4 P v Collector Current Ic 500 mA owt Emitter Current Ir -500 mA 1. EMITTER 2. BASE Collector Power Dissipation Pc 350 mW 3. COLLECTOR Junction Temperature Tj 150 Cc Storage Temperature Tag 55 ~ 150 Cc SOT23 Marking H Lot No. benim DX 1 1 ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Collector Cut-off Current Icpo Vcp=80V - - 100 nA Emitter Cut-off Current Icko Vcr=60V - - 100 nA Collector-Emitter _ _ _ Breakdown Voltage Venricro IcsImA 80 Vv hre() Vew=1V, Ic=l0mA 100 - - DC Current Gain hrg(2) Vcr=lV, Ic=100mA 100 - - Collector-Emitter _ _ _ _ - Saturation Voltage Venisat) Ic=100mA, Ip=10mA 0.25 Vv Base-Emitter Voltage Var Vcr=lV, Ic=100mA - - 1.2 Vv Transition Frequency fr Vcr=2V, Ic=l0mA 100 - - MHz 1998. 10. 12 Revision No : 0 KEC 1/1