Silicon PIN Photodiode, RoHS Compliant
www.vishay.com For technical questions, contact: detectortechsupport@vishay.com Document Number: 81500
330 Rev. 1.5, 16-Sep-08
BP104, BP104S
Vishay Semiconductors
DESCRIPTION
BP104 is a PIN photodiode with high speed and high radiant
sensitivity in miniature, flat, top view plastic package with
daylight blocking filter. Filter bandwidth is matched with
900 nm to 950 nm IR emitters.
BP104S is packed in tubes, specifications like BP104.
FEATURES
• Package type: leaded
• Package form: top view
• Dimensions (in mm): 5.4 x 4.3 x 3.2
• Radiant sensitive area (in mm2): 7.5
• High radiant sensitivity
• Daylight blocking filter matched with 940 nm
emitters
• Fast response times
• Angle of half sensitivity: ϕ = ± 65°
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
• High speed detector for infrared radiation
• Infrared remote control and free air data transmission
systems, e.g. in combination with TSALxxxx series IR
emitters
Note
Test condition see table “Basic Characteristics”
Note
MOQ: minimum order quantity
Note
Tamb = 25 °C, unless otherwise specified
948386_1
PRODUCT SUMMARY
COMPONENT Ira (µA) ϕ (deg) λ0.5 (nm)
BP104 45 ± 65 870 to 1050
BP104S 45 ± 65 870 to 1050
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
BP104 Bulk MOQ: 3000 pcs, 3000 pcs/bulk Top view
BP104S Tube MOQ: 1800 pcs, 45 pcs/tube Top view
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR60 V
Power dissipation Tamb ≤ 25 °C PV215 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 100 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature t ≤ 3 s Tsd 260 °C
Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm2 RthJA 350 K/W
Document Number: 81500 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com
Rev. 1.5, 16-Sep-08 331
BP104, BP104S
Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors
Note
Tamb = 25 °C, unless otherwise specified
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Breakdown voltage IR = 100 µA, E = 0 V(BR) 60 V
Reverse dark current VR = 10 V, E = 0 Iro 230nA
Diode capacitance VR= 0 V, f = 1 MHz, E = 0 CD70 pF
VR= 3 V, f = 1 MHz, E = 0 CD25 40 pF
Open circuit Voltage Ee = 1 mW/cm2, λ = 950 nm Vo350 mV
Short circuit current Ee = 1 mW/cm2, λ = 950 nm Ik38 µA
Reverse light current Ee = 1 mW/cm2, λ = 950 n m,
VR = 5 V Ira 40 45 µA
Angle of half sensitivity ϕ± 65 deg
Wavelength of peak sensitivity λp950 nm
Range of spectral bandwidth λ0.5 870 to 1050 nm
Noise equivalent power VR = 10 V, λ = 950 nm NEP 4 x 10-14 W/√ Hz
Rise time VR = 10 V, RL = 1 kΩ, λ = 820 nm tr100 ns
Fall time VR = 10 V, RL = 1 kΩ, λ = 820 nm tf100 ns
20 40 60 80
1
10
100
1000
100
94 8403
V
R
= 10 V
T
amb
- Ambient Temperature (°C)
I
ro
- Reverse Dark Current (nA)
0.6
0.8
1.0
1.2
1.4
94 8409
V
R
=5V
λ = 950 nm
100806040200
I - Relative Reverse Light Current
T - Ambient Temperature (°C)
amb
ra rel
www.vishay.com For technical questions, contact: detectortechsupport@vishay.com Document Number: 81500
332 Rev. 1.5, 16-Sep-08
BP104, BP104S
Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
0.01 0.1 1
0.1
1
10
100
1000
I - Reverse Light Current (µA)
ra
E
e
- Irradiance (mW/cm²)
10
94 8414
V
R
= 5 V
= 950 nm
λ
0.1 1 10
1
10
100
VR- Reverse Voltage (V)
100
94 8415
I - Reverse Light Current (µA)
ra
1 mW/cm2
0.5 mW/cm2
0.2 mW/cm2
0.1 mW/cm2
0.05 mW/cm2
0.02 mW/cm2
= 950 nm
λ
0
20
40
60
80
948407
E = 0
f = 1 MHz
CD - Diode Capacitance (pF)
VR - Reverse Voltage (V)
0.1 100
110
750 850 950 1050
0
0.2
0.4
0.6
0.8
1.2
S ( ) - Relative Spectral Sensitivity
rel
- Wavelength (nm)
1150
94 8408
1.0
0.4 0.2 0
S
rel
- Relative Radiant Sensitivity
94 8406
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
Document Number: 81500 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com
Rev. 1.5, 16-Sep-08 333
BP104, BP104S
Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
TUBE PACKAGING DIMENSIONS in millimeters
Fig. 8 - Drawing Proportions not scaled
96 12186
18800
Stopper
10.7
9.5
214.5
Quantity per tube: 45 pcs
Quantity per box: 1800 pcs
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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