HEWLETT PACKARD A Features PHEMT Tachnology Low Noise Figure: 0.75 Typical at 12 GHz e High Associated Gain: 11 dB Typical at 12 GHz Cost Effective Ceramic Microstrip Package #Tape-and-Reel Packaging Option Available Description The ATF-35076, -35176, and -35376 are noise perfomance differentiated versions ofthe high performance ATF-35 Pseudo- morphic High Electron Mobility Transistor (PHEMT), housedin the Style 76 cost effective, ceramic microstrip package. The ATF-25076 offers premium noise figure and is an ideal cholee for use in the first stage of extremely low noise cascades. The aignily higher noise figure of the ATF-35176 makes it appro- j pate for use inthe second stage of premium cascades or as the first Stage in amplifiers that have less critical noise require- ments. The moderate noise performance of the ATF-35376 makes this part suitable for second stage use in low noise gascades. Although developed for use in Ku band DBS sys- tems, hese devices are also appropriate for use in C band LNAs or other low noise amplifiers operating in the 2 to 418GHz frequency range. 5 r e GaAs PHEMT devices have a nominal 0,25 micron gata length with a total gate periphery of 200 microns. Proven gald i based metallization systams and nitride passivation assure | mugged, reliable devicas, a Aes ATF-35076, -35176, -35376 2-18 GHz Low Noise Pseudomorphic HEMT Eu (o.208) ORT} i DINENSIOHS AAE |W MILLIMETERS (IHCHES| Typical Noise Parameters: Vpg = 1.5 V, Ipg= 10 mA ATF<25076 |ATF-35176 | ATF-35376 FREG NFo NFo NFo Tort ANZo GHz ap ae ~ a8 MAG ANG = 2.0 13 4 1? 2 628g ed 4.0 20 28 ad fad 43 Ag 6.0 a8 ad 50 62 6 15 a0 50 a oT oF Be p10 10.0 -63 a -Ba =) 118 | :oF 12.0 aS BE 1.00 4d 140 | 105 14.0 -B8 39 LAF 42 164 04 i Poet and Fr Zoapply equally to the 47F-35076, ATF-35176, and ATF-35376. H ical Specifications, Ty = 25C sy Parameters and Test Conditions Product Unit | Min. | Typ. | Max, NFO | Optimum Noise Figure: Vong = 1.5'V. Ing = 10.mA f=4.0 GHz ATF-35076 ab 0.25 x t= 12 GHz dB 0.75 | 0.60 a Gain @ NFo Vos = 1.5 V, ips = 10 mA f=4.0 GHz: ae 16.0 i; f=12 GHz aa] 10.0 | i140 NEa | Optimum Noise Figure: Vps= 15 V, Ips = 10 mA t= 4.0 GHz ATF-a5176 iB 0.80 : f= 12 GHr dB 0.85 | 0.90 Gain @ NFo Vos = 1.5 , Ips = 10 mA f= 4.0GHz dB 16.0 i f= 12 GHz dB | 10.0] 11.0 ve Optimum Moise Figure: Vos = 1.5 V, log = 10mA f=4.0 GHz ATF-35376 dB o.40 ; f= 12 GHz dB to | 412 Ga Gain @ NFo Vos= 1.5 V, Ips =10mA {24,0 GHz dE 15.0 i f=12 GHz dB 9.5 10.0 Transeonduciancs: Vos = 1.57, Vas=0 mS 40 65 | Saturated Drain Current: Vos= 15 V. Vas=0V mA | 20 50. | 70 ~ Pinchotf Voltage: Vos = 1.5 V, ips = 1mA <2.0 0.4 a f-fa ATF-35076, -35176, -35376 9.18 GHz Low Noise Pseudomorphic HEMT SE Ee, Absolute Maximum Ratings Part Number Order Information Parameter Symbol | framunt Part Number Devices Per Reel Reel Size Drain-Source Voltage Yoo | tH ATF-35076-TR1 1000 r Gate-Source Voltage Ves -3V Drain Gurrent le Tse ATF-35076-TR2 4000 13 Total Power Dissipation2.4 | Py 225 mW ATF-35076-STR 1 stelp FF Input Power Pin max | +10 dBm ATF-35176-TR1 1000 fr Channel Temperatura TeH 150C ATF-35176-TR2 4000 i - . 13 Storage Temperature T 65 to 150C ee rb ATF-35176-STR 1 strip Thermal Resistance 2: 8j=325 CW: ToH=150C ATF-35376-TR1 1000 rH Liquid Crystal Measurement: 1 jum Spot Size 4 ATF-35376-TR? 4000 13 Notes: ATF-3537 1. Operation of this device above any one of these limits may cause SER ETE i ane = permanent damage. 2. Teasa = 25C 3. Derate at 3.2 mV! C for Te>1029C 4. Thea small spotsize of this technique results ina higher, though more accurate determination of Bj than altamate methods. Fer mare information, see "Tape and Reel Packaging for Semiconductor Deviees", page 14-14. Typical Performance,T, = 25C, (Unless otherwise noted) Noise Figure and Associated Gain vs. Frequency (ATF-35076) Vos = 1.5 V, lng = 10 mA Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain ws. Frequency Vos = 1.5 V, Ipg = 10 mA 25 25 20 20 fae) a 15 3 3 16 10 6 @ 10 6 o 0 oO 4 8 12 16 20 1 2 5 10 20 Frequency, GHz Frequency, GHz Typical Scattering Parameters: Common Source, Z, = 50 0 Ta = 25C, Vog = 1-5 V, Ipg= 10 mA Freq. $y S21 Si2 S23 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 2.0 -88 -31 12.69 4.10 149 -29.11 035 6? 49 24 3.0 25 -43 12.13 4.04 137 25,85 051 59 Ar a3 4.0 ae -60 12.06 4.01 ize -20.46 O8F 48 45 85 5.0 88 -76 11.84 3.91 106 21.94 O80 36 At -58 6.0 BS -62 14.54 3.76 ai 20.82 081 2 8 FO 7.0 7 -108 T1122 3.64 ir? 20.00 100 16 35 -83 6.0 ad 118 10.95 3.50 67 18.33 108 10 ae 30 9.0 73 134 10.66 3.41 53 -18.86 114 0 29 -102 70.0 FO -149 10.32 3.28 39 -18.42 120 10 or 114 11.0 -66 -164 10.04 3.17 26 18.20 123 -20 24 ler 12.0 -63 178 o.75 3.07 13 17.86 128 29 we 139 13.0 61 166 8.57 3.01 09 17.79 129 -39 20 -150 14.0 -60 155 B37 2.94 -83 -17.65 94 43 16 -158 15.0 -59 140 S17 2.68 22 17.52 AWG 54 14 170 16.0 BF t2d 8.31 279 35 -17 46 134 -65 11 1f6 17.0 25 108 8.82 2.76 -50 17.20 138 Th OF 166 18.0 54 a8 ar? 2.75 -64 17.02 141 -B9 4 131 Tha above 5 parameter description apphes equally to the ATF-25076, -35176, and -35976, 74 ATF-35076, -35176, -35376 2-18 GHz Low Noise Pseudomorphic HEMT EE Ee ATF-35 Series Pseudomorphic HEMT forthe ATF-35 Series PHEMTs, increasing I ds fram 10 mA to ag mA has the eect of increasing gain at 12 GHz by approxi- mately 1 dB without significantly altering noise performance. Designers having the flexibility to operate at this higher bias current may want to take advantage of this feature. 20 mA S parameter data follows. Since device capacitances vary little with bias current, the 10 mA noise parameters may also be used to describe 20 mA noise performance. Typical Performance,T, = 25C, (Unies otherwise noted) Nolse Figure and Associated Gain vs. Frequency (ATF-35076) Vos = 1.5 ; lag =20 mA Insertion Power Gain and Maximum Stable Gain vs. Frequency Vog = 1.5 , Ing = 20 mA 25 25 a < 20 20 ao S. is 3 a a o z 2 = wo g 10 Bat 5 5 0 0 o a 8 12 18 20 1 2 5 10 20 Frequency, GHz Frequency, GHz Typical Scattering Parameters: Common Source, Z, = 50 T= 25C, Vps = 1.5 V, Ing = 20 mA Freq. Si Sx Se S29 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 2.0 aT 33 13.89 4.95 147 29.62 033 68 ft 2d 3.0 35 -45 13.76 4.88 135 26.56 4? 60 40 33 4.0 1 -62 13.47 477 119 -Ba 44 060 50 ae -45 5.0 86 Fi 13.20 4.57 103 Bef O73 36 ao 57 6.0 A) -95 12:75 4.94 88 21.72 082 28 a0 89 7.0 6 +110 12.34 4.14 v4 20.82 081 18 zt 82 $8.0 wf4 -121 12.07 4.01 65 20.09 099 14 24 -90 9.0 A -135 141.75 3.87 51 19.66 104 5 22 -102 10.0 87 -150 11.35 3.70 a7 AQAT 110 20 443 110 62 -164 10.95 3.53 24 18.86 114 -14 AT -123 12.0 59 -178 10.63 3.40 11 -18.42 120 ea AS -138 13.6 AF 167 10.47 a.44 2 18.20 ale 33 14 =152 14.0 56 146 1.392 3.28 9 -1.99 126 -a7 12 -164 15.0 Ah 140 10.10 3.20 23 -17.92 le? -47 10 173 16.0 ae 125 9.82 310 -a7 17.65 131 -58 06 -179 17.0 49 107 9.70 3.05 51 17.39 135 -70 03 165 18.0 a0 BE 9.72 3.06 -66 -17.08 -140 -B2 03 53 The above S parameter description applias equally to the ATP-35076, -35176, and -35376. Fiat)