HIGH POWER SILICON PNP/NPN TRANSISTORS 2N5875 (PNP) 2N5877 (NPN) * High Power, Low VCE(Sat). * Hermetic TO3 (TO-204AA) Metal Package. * Ideally Suited For Power Amplifier And Switching Applications. * Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO VCEO VEBO IC IB PD TJ Tstg Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Continuous Collector Current Base Current TC = 25C Total Power Dissipation at Derate Above 25C Junction Temperature Range Storage Temperature Range 2N5875 PNP 2N5877 NPN -60V -60V -5V 60V 60V 5V 10A 4A 150W 0.857W/C -65 to +200C -65 to +200C THERMAL PROPERTIES Symbols Parameters RJC Thermal Resistance, Junction To Case Max. Units 1.17 C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 9494 Issue 1 Page 1 of 3 HIGH POWER SILICON PNP/NPN TRANSISTORS 2N5875 / 2N5877 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise stated) (1) Symbols Parameters Test Conditions V(BR)CEO Collector-Emitter Breakdown Voltage IC = 20mA IB = 0 ICEO Collector Cut-Off Current VCE = 30V IB = 0 1.0 ICEX Collector Cut-Off Current VCE = 60V VBE = -1.5V 0.5 TC = 150C 5 ICBO Collector Cut-Off Current VCB = 60V IE = 0 0.5 IEBO Emitter Cut-Off Current VEB = 5V IC = 0 1.0 IC = 1.0A VCE = 4V 35 IC = 4A VCE = 4V 20 IC = 10A VCE = 4V 4 IC = 5A IB = 0.5A 1.0 IC = 10A IB = 2.5A 3 Base-Emitter Saturation Voltage IC = 10A IB = 2.5A 2.5 Base-Emitter On Voltage IC = 4A VCE = 4V 1.5 IC = 0.5A VCE = 10V (2) hFE Forward-current transfer ratio (2) (2) VCE(sat) VBE(sat) VBE(on) (2) (2) Collector-Emitter Saturation Voltage Min. Typ Max. 60 Units V mA 100 V DYNAMIC CHARACTERISTICS fT (3) hfe Current Gain-Bandwidth Product Small Signal Current Gain 4 MHz f = 1.0MHz IC = 1.0A VCE = 4V f = 1.0KHz 20 Notes (1) For PNP (2N5875) device, voltage and current values are negative (2) Pulse Width 380us, 2% (3) fT = |hfe| * ftest Semelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 9494 Issue 1 Page 2 of 3 HIGH POWER SILICON PNP/NPN TRANSISTORS 2N5875 / 2N5877 MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO3 (TO-204AA) METAL PACKAGE Underside View Pin 1 - Base Pin 2 - Emitter Case - Collector Semelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 9494 Issue 1 Page 3 of 3