CORE DRIVERS TABLE 9 NPN SILICON PLANAR HIGH SPEED CORE DRIVER TRANSISTORS The devices shown in this table are designed for use in fast, medium and high voltage, high current core driving applications where the high speed at high current capability is of prime importance. Max Vceisat) Hee Switching Times Max at at (Max) at Prot Type Vcsp | Vceo! Ic at Tamb | Package le lg Min.| Max. le ton | tott le = 25C Vv Vv mA}] V {| mA|mA m ns | ns | mA | mW BSX59 ; 70 45 |1000}0.3 | 150] 15; 25} |500} 35 | 60] 500 800 TO-39 BSX60 | 70 30 |1000]/0.3 | 150} 15] 30) 90,500} 40 | 70) 500 800 TO-39 BSX61 | 70 45 |1000/0.5 ; 150] 15] 25] |500; 50 | 100) 500 800 TO-39 2N3261 | 40 15 500} 0.35] 100 | 10| 40) 150; 10] 13 | 16 } 100 300 TO-18 2N3512 | 60 35 |0.4 | 150] 7.5] 10; {500/ 30 | 45} 150 | 800 TO-39 2N3724 | 50 30 500/0.2 | 100] 10] 60} 150 | 100) 35 | 60 | 500 800 TO-39 2N3725 | 80 40 500] 0.26; 100 | 10] 60} 150 | 100| 35 | 60 | 500 800 TO-39 DARLINGTONS TABLE 10 NPN SILICON HIGH CURRENT DARLINGTON TRANSISTORS The devices shown in this table are designed for applications requiring very high current gain. The monolithic construction has the inherent advantages of fast switching times, low saturation voltages and low leakage currents. This table should be referred to in conjunction with the LF Power Transistor Section which contains full details of the available range of Darlington Transistors. Max Vceisat) hee Max Cobo|Max. Icao Max. at at | at TMHz at Prot Type Vcp |Vceol Ic - at Tsmp| Package lc | Ip | Min.|Max.| Ic Vee Vca| =25C V Vv A Vv A |mA A | pF] V] wAL V Ww BD320A | 80 60 1 11.6 1 1) 1K] |0.5} 6 | 10] 1 60 5 TO-39 BD320B | 80 60 1 11.6 1 1) 5K] |0.5} 6 | 10] 1 60 5 TO-39 BD320C | 80 60 1 11.6 1 1] 10K} |0.5] 6 10] 1 60 5 TO-39 BD321A | 80 60 2 41.7 2 2) 1K) 1 {85/10} 4 60 5 TO-39 BD321B | 80 60 2 11.7 2 2) 5K} 1/85] 10) 1 60 5 TO-39 BD321C |} 80 |; 60 2 |1.7} 2 2} 10K} | 1 | 85] 10; 1 | 60 5 TO-39 BD322A | 80 60 1 41.6 1 1) 1K} J0.5}; 6 } 10] 1 60 7.5 TO-39 BD322B | 80 60 1 11.6 1 1] 5K | [0.5] 6 | 10] 1 60 7.5 TO-39 BD322C | 80 60 1 11.6 1 t} 10K} |0.5} 6 | 10; 1 60 7.5 TO-39 BD323A | 80 60 2 |1.7 2 2} 1K} 1185/10] 1 60 10 TO-39 BD323B | 80 60 2 41.7 2 2) SK] 1 )85) 10) 1 60 10 TO-39 BD323C | 80 60 2 41.7 2 2| 10K} 1 |85) 10] 1 60 10 TO-39 2N6383 40 40 10 | 3 10 | 100} 1K | 20K |} 5 | 200; 10} 1* | 40 100 TO-3 2N6384 60 60 | 10 | 3 | 10 |100] 1K |} 20K | 5 | 200] 10] 1* | 60 100 TO-3 2N6385 80 so | 10 | 3 | 10 | 100) 1K | 20K | 5 | 200; 10} 1* | 80 100 TO-3 *Refers to Iceo (in mA) MC11