NUD3105DMT1G - ON SEMICONDUCTOR - Datasheet.Directory

October, 2009 − Rev. 5

1Publication Order Number:

NUD3105D/D

NUD3105D

Integrated Relay,

Inductive Load Driver

This device is used to switch inductive loads such as relays,

solenoids incandescent lamps, and small DC motors without the need

of a free−wheeling diode. The device integrates all necessary items

such as the MOSFET switch, ESD protection, and Zener clamps. It

accepts logic level inputs thus allowing it to be driven by a large

variety of devices including logic gates, inverters, and

microcontrollers.

Features

•Provides a Robust Driver Interface Between D.C. Relay Coil and

Sensitive Logic Circuits

•Optimized to Switch Relays from 3.0 V to 5.0 V Rail

•Capable of Driving Relay Coils Rated up to 2.5 W at 5.0 V

•Internal Zener Eliminates the Need of Free−Wheeling Diode

•Internal Zener Clamp Routes Induced Current to Ground for Quieter

Systems Operation

•Low VDS(on) Reduces System Current Drain

•Pb−Free Package is Available

Typical Applications

•Telecom: Line Cards, Modems, Answering Machines, FAX

•Computers and Office: Photocopiers, Printers, Desktop Computers

•Consumer: TVs and VCRs, Stereo Receivers, CD Players,

Cassette Recorders

•Industrial: Small Appliances, Security Systems, Automated Test

Equipment, Garage Door Openers

•Automotive: 5.0 V Driven Relays, Motor Controls, Power Latches,

Lamp Drivers

INTERNAL CIRCUIT DIAGRAMS

Drain (6)

1.0 k

300 k

Gate (2)

Source (1)

Drain (3)

1.0 k

300 k

Gate (5)

Source (4)

CASE 318F

Device Package Shipping†

ORDERING INFORMATION

MARKING

DIAGRAM

Relay, Inductive Load Driver

0.5 Amp, 8.0 V Clamp

NUD3105DMT1 SC−74 3000/Tape & Reel

SC−74

CASE 318F

STYLE 7

JW4 = Specific Device Code

D = Date Code

G= Pb−Free Package

JW4 D G

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

(Note: Microdot may be in either location)

http://onsemi.com

NUD3105DMT1G SC−74

(Pb−Free)

3000/Tape & Reel

NUD3105D

http://onsemi.com

MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)

Symbol Rating Value Unit

VDSS Drain to Source Voltage − Continuous 6.0 Vdc

VGS Gate to Source Voltage – Continuous 6.0 Vdc

IDDrain Current – Continuous 500 mA

EzSingle Pulse Drain−to−Source Avalanche Energy (TJinitial = 25°C) 50 mJ

TJJunction Temperature 150 °C

TAOperating Ambient Temperature −40 to 85 °C

Tstg Storage Temperature Range −65 to +150 °C

PDTotal Power Dissipation (Note 1)

Derating Above 25°C

380

1.5

mW/°C

RqJA Thermal Resistance Junction−to−Ambient 329 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. This device contains ESD protection and exceeds the following tests:

Human Body Model 2000 V per MIL_STD−883, Method 3015.

Machine Model Method 200 V.

TYPICAL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Symbol Characteristic Min Typ Max Unit

OFF CHARACTERISTICS

VBRDSS Drain to Source Sustaining Voltage (Internally Clamped)

(ID = 10 mA)

6.0 8.0 9.0 V

BVGSO Ig = 1.0 mA − − 8.0 V

IDSS Drain to Source Leakage Current

(VDS = 5.5 V , VGS = 0 V, TJ = 25°C)

(VDS = 5.5 V, VGS = 0 V, TJ = 85°C )

−

IGSS Gate Body Leakage Current

(VGS = 3.0 V, VDS = 0 V)

(VGS = 5.0 V, VDS = 0 V)

5.0

−

ON CHARACTERISTICS

VGS(th) Gate Threshold Voltage

(VGS = VDS, ID = 1.0 mA)

(VGS = VDS, ID = 1.0 mA, TJ = 85°C)

0.8

1.2

−

1.4

RDS(on) Drain to Source On−Resistance

(ID = 250 mA, VGS = 3.0 V)

(ID = 500 mA, VGS = 3.0 V)

(ID = 500 mA, VGS = 5.0 V)

(ID = 500 mA, VGS = 3.0 V, TJ = 85°C)

(ID = 500 mA, VGS = 5.0 V, TJ = 85°C)

−

1.2

1.3

0.9

1.3

0.9

IDS(on) Output Continuous Current

(VDS = 0.25 V, VGS = 3.0 V)

(VDS = 0.25 V, VGS = 3.0 V, TJ = 85°C)

300

200

400

−

gFS Forward Transconductance

(VOUT = 5.0 V, IOUT = 0.25 A)

350 570 −mMhos

NUD3105D

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TYPICAL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Symbol UnitMaxTypMinCharacteristic

DYNAMIC CHARACTERISTICS

Ciss Input Capacitance

(VDS = 5.0 V,VGS = 0 V, f = 10 kHz)

−25 −pF

Coss Output Capacitance

(VDS = 5.0 V, VGS = 0 V, f = 10 kHz)

−37 −pF

Crss Transfer Capacitance

(VDS = 5.0 V, VGS = 0 V, f = 10 kHz)

−8.0 −pF

SWITCHING CHARACTERISTICS

Symbol Characteristic Min Typ Max Units

tPHL

tPLH

tPHL

tPLH

Propagation Delay Times:

High to Low Propagation Delay; Figure 1 (5.0 V)

Low to High Propagation Delay; Figure 1 (5.0 V)

High to Low Propagation Delay; Figure 1 (3.0 V)

Low to High Propagation Delay; Figure 1 (3.0 V)

−

Transition Times:

Fall Time; Figure 1 (5.0 V)

Rise Time; Figure 1 (5.0 V)

Fall Time; Figure 1 (3.0 V)

Rise Time; Figure 1 (3.0 V)

−

Figure 1. Switching Waveforms

Vout

GND

Vin

GND

VCC

trtf

tPLH tPHL

50%

90%

50%

10%

NUD3105D

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TYPICAL CHARACTERISTICS

VZ, ZENER CLAMP VOLTAGE (V)

VGS = 0 V

11.0

12.0

10.0

9.0

8.0

7.0

13.0

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.80

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 2. Output Characteristics

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. Transfer Function

TEMPERATURE (°C)

Figure 4. On Resistance Variation vs. Temperature Figure 5. RDS(ON) Variation with

Gate−To−Source Voltage

Figure 6. Zener Voltage vs. Temperature

IZ, ZENER CURRENT (mA)

Figure 7. Zener Clamp Voltage vs. Zener Current

ID, DRAIN CURRENT (A)

−50 −25 0 25 50 75 100

1200

1000

800

600

400

200

125

RDS(on), DRAIN−TO−SOURCE

RESISTANCE (mW)

VZ, ZENER VOLTAGE (V)

−50 −25 0 25 50 75 100 125

IZ = 10 mA

ID = 0.25 A

VGS = 3.0 V

50°C

1.0 1.2 1.4 1.60.8

2.0

1.8

RDS(on), DRAIN−TO−SOURCE

RESISTANCE (W)

ID = 250 mA

1.0 100.1 100

VGS = 0 V

VGS = 1.0 V

ID, DRAIN CURRENT (A)

VGS = 5.0 V

VGS = 3.0 V

VGS = 2.0 V

TJ = 25°C

1.0

0.1

0.01

0.001

0.0001

0.00001

0.000001

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

85°C

−40°C

VDS = 0.8 V

ID = 0.5 A

VGS = 3.0 V

ID = 0.5 A

VGS = 5.0 V

VGS, GATE−TO−SOURCE VOLTAGE (V)

50°C

85°C

−40°C

125°C

8.20

8.18

8.16

8.14

8.12

8.10

8.08

8.06

8.04

8.02

8.00

TEMPERATURE (°C)

1.0

0.1

0.01

0.001

0.0001

0.00001

85°C

−40°C

25°C

1000

6.0

NUD3105D

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TYPICAL CHARACTERISTICS

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

0.01 100100.1

0.1

1.0

0.01

ID, DRAIN CURRENT (A)

1.0

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

ID, DRAIN CURRENT (A)

Figure 8. On−Resistance vs. Drain Current and

Temperature

TEMPERATURE (°C)

Figure 9. Gate Leakage vs. Temperature

RDS(ON), DRAIN−TO−SOURCE

RESISTANCE (W)

1.0

0.9

0.8

0.5

0.6

0.7

1.1

1.2

0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5

IGSS, GATE LEAKAGE (mA)

−50 −25 025 50 75 100 125

125°C

85°C

50°C

25°C

−40°C

VGS = 3.0 V

VGS = 5.0 V

Figure 10. Safe Operating Area for NUD3105DLT1

Figure 11. Transient Thermal Response for NUD3105DLT1

0.01 0.1 1.0 10 100 1000 10,000 100,000 1,000,000

D = 0.5

0.2

0.1

0.05

0.02

SINGLE PULSE

0.01

Pd(pk)

DUTY CYCLE = t1/t2

PERIOD

r(t), TRANSIENT THERMAL

RESISTANCE (NORMALIZED)

1.0

0.1

0.01

0.001

t1, PULSE WIDTH (ms)

PW = 0.1 s

DC = 50%

PW = 7.0 ms

DC = 5%

PW = 10 ms

DC = 20%

Typical

IZ vs. VZ

V(BR)DSS min = 6.0 V

ID−Continuous = 0.5 A

VGS = 3.0 V, TC = 25°C

NUD3105D

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Designing with this Data Sheet

1. Determine the maximum inductive load current (at

max VCC, min coil resistance & usually minimum

temperature) that the NUD3105D will have to

drive and make sure it is less than the max rated

current.

2. For pulsed operation, use the Transient Thermal

Response of Figure 11 and the instructions with it

to determine the maximum limit on transistor

power dissipation for the desired duty cycle and

temperature range.

3. Use Figures 10 and 11 with the SOA notes to

insure that instantaneous operation does not push

the device beyond the limits of the SOA plot.

4. Verify that the circuit driving the gate will meet

the VGS(th) from the Electrical Characteristics

table.

5. Using the max output current calculated in step 1,

check Figure 7 to insure that the range of Zener

clamp voltage over temperature will satisfy all

system & EMI requirements.

6. Use IGSS and IDSS from the Electrical

Characteristics table to insure that “OFF” state

leakage over temperature and voltage extremes

does not violate any system requirements.

7. Review circuit operation and insure none of the

device max ratings are being exceeded.

Figure 12. A 200 mW, 5.0 V Dual Coil Latching Relay Application

with 3.0 V Level Translating Interface

+4.5 ≤ VCC ≤ +5.5 Vdc

Vout (6)

Vin (2)

GND (1)

NUD3105DDMT1

+3.0 ≤ VDD ≤ +3.75 Vdc

APPLICATIONS DIAGRAMS

Vout (3)

Vin (5)

GND (4)

NUD3105D

http://onsemi.com

Figure 13. A 140 mW, 5.0 V Relay with TTL Interface

+4.5 TO +5.5 Vdc

Vout (3)

−

AROMAT

TX2−5V

Max Continuous Current Calculation

for TX2−5V Relay, R1 = 178 W Nominal @ RA = 25°C

Assuming ±10% Make Tolerance,

R1 = 178 W * 0.9 = 160 W Min @ TA = 25°C

TC for Annealed Copper Wire is 0.4%/°C

R1 = 160 W * [1+(0.004) * (−40°−25°)] = 118 W Min @ −40°C

IO Max = (5.5 V Max − 0.25V) /118 W = 45 mA

Vout (3)

−

AROMAT

JS1E−5V

Figure 14. A Quad 5.0 V, 360 mW Coil Relay Bank

−

AROMAT

JS1E−5V

−

AROMAT

JS1E−5V

−

AROMAT

JS1E−5V

+4.5 TO +5.5 Vdc

Vin (1)

GND (2)

NUD3105LT1

Vin (1)

GND (2)

NUD3105LT1

NUD3105D

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PACKAGE DIMENSIONS

SC−74

CASE 318F−05

ISSUE M

456

0.05 (0.002)

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES

LEAD FINISH THICKNESS. MINIMUM LEAD

THICKNESS IS THE MINIMUM THICKNESS

OF BASE MATERIAL.

4. 318F−01, −02, −03, −04 OBSOLETE. NEW

STANDARD 318F−05.

0.7

0.028

1.9

0.074

0.95

0.037

2.4

0.094

1.0

0.039

0.95

0.037

ǒmm

inchesǓ

SCALE 10:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

DIM

MIN NOM MAX MIN

MILLIMETERS

0.90 1.00 1.10 0.035

INCHES

A1 0.01 0.06 0.10 0.001

b0.25 0.37 0.50 0.010

c0.10 0.18 0.26 0.004

D2.90 3.00 3.10 0.114

E1.30 1.50 1.70 0.051

e0.85 0.95 1.05 0.034

0.20 0.40 0.60 0.008

0.039 0.043

0.002 0.004

0.015 0.020

0.007 0.010

0.118 0.122

0.059 0.067

0.037 0.041

0.016 0.024

NOM MAX

2.50 2.75 3.00 0.099 0.108 0.118

− −

0°10°0°10°

STYLE 7:

PIN 1. SOURCE 1

2. GATE 1

3. DRAIN 2

4. SOURCE 2

5. GATE 2

6. DRAIN 1

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent

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NUD3105D/D

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