To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2361, 2362 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high voltage switching applications. FEATURES * Low on-state resistance 2SK2361: RDS (on) = 0.9 MAX. (VGS = 10 V, ID = 5.0 A) 2SK2362: RDS (on) = 1.0 MAX. (VGS = 10 V, ID = 5.0 A) * Low input capacitance Ciss = 1050 pF TYP. * High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) (2SK2361/2362) VDSS 450/500 V Gate to Source Voltage (VDS = 0 V) VGSS 30 V Drain Current (DC) ID (DC) 10 A Drain Current (pulse)* ID (pulse) Total Power Dissipation (Tc = 25C) PT1 40 100 A W Total Power Dissipation (TA = 25C) PT2 3.0 W 150 C Channel Temperature Tch Storage Temperature Tstg Single Avalanche Current** IAS 10 A Single Avalanche Energy** EAS 142 mJ -55 to +150 C * PW 10 s, Duty Cycle 1 % ** Starting Tch = 25C, RG = 25 , VGS = 20 V 0 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D11394EJ3V0DS00 (3rd edition) Previous No. TC-2502 Date Published November 2006 N CP(K) Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 2SK2361, 2362 ELECTRICAL CHARACTERISTICS (TA = 25C) CHARACTERISTIC SYMBOL Drain to Source On-Resistance MIN. RDS (on) TYP. MAX. UNIT TEST CONDITIONS 0.7 0.9 VGS = 10 V 2SK2361 0.8 1.0 ID = 5.0 A 2SK2362 3.5 V VDS = 10 V, ID = 1 mA S VDS = 10 V, ID = 5.0 A Gate to Source Cutoff Voltage VGS (off) 2.5 Forward Transfer Admittance | yfs | 3.0 Drain Leakage Current IDSS 100 A VDS = VDSS, VGS = 0 Gate to Source Leakage Current IGSS 100 nA VGS = 30 V, VDS = 0 Input Capacitance Ciss 1050 pF VDS = 10 V Output Capacitance Coss 200 pF VGS = 0 Reverse Transfer Capacitance Crss 26 pF f = 1 MHz Turn-On Delay Time td (on) 15 ns ID = 5.0 A Rise Time tr 24 ns VGS = 10 V Turn-Off Delay Time td (off) 50 ns VDD = 150 V Fall Time tf 14 ns RG = 10 RL = 30 Total Gate Charge QG 26 nC ID = 10 A Gate to Source Charge QGS 6.1 nC VDD = 400 V Gate to Drain Charge QGD 12 nC VGS = 10 V Body Diode Forward Voltage VF (S-D) 1.0 V IF = 10 A, VGS = 0 Reverse Recovery Time trr 350 ns IF = 10 A, VGS = 0 Reverse Recovery Charge Qrr 2.0 C di/dt = 50 A/s Test Circuit 1 Avalanche Capability D.U.T. RG = 25 PG VGS = 20 - 0 V Test Circuit 2 Switching Time D.U.T. L 50 VGS RL RG RG = 10 PG. VDD VGS Wave Form 0 VGS (on) 10 % 90 % VDD ID 90 % 90 % BVDSS IAS ID ID VGS 0 VDS I D Wave Form t VDD t = 1 us Duty Cycle 1 % Test Circuit 3 Gate Charge D.U.T. IG = 2 mA 2 10 % 10 % td (on) tr ton Starting Tch PG. 0 50 RL VDD Data Sheet D11394EJ3V0DS td (off) tf toff 2SK2361, 2362 TYPICAL CHARACTERISTICS (TA = 25C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 100 80 60 40 20 0 20 40 60 80 60 40 20 0 100 120 140 160 80 20 40 60 80 100 120 140 160 TC - Case Temperature - C TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 20 100 Pulsed (at VG 0 1 ID (DC) 10 16 s s m s Po we 10 rD iss ipa 1.0 = 10 R 10 d ite ) Lim 10 V = S DS ) (on PW 2SK2362 2SK2361 ms tio n Lim ID - Drain Current - A ID (pulse) ID - Drain Current - A 100 12 0.1 1 d 10 8 4 ite TC = 25 C Single Pulse VGS = 20 V 10 V 8V 6V 100 1 000 0 4 8 12 16 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE ID - Drain Current - A 100 Pulsed 10 1 TA = -25 C 25 C 75 C 125 C 0.1 0 5 10 15 VGS - Gate to Source Voltage - V Data Sheet D11394EJ3V0DS 3 2SK2361, 2362 rth (ch-c) (t) - Transient Thermal Resistance - C/W TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 100 Rth (ch-a) = 41.7 C/W 10 Rth (ch-c) = 1.25 C/W 1 0.1 0.01 TC = 25 C Single Pulse 0.001 10 u 100 u 1m 10 m 100 m 1 10 100 1 000 | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 10 VDS = 10 V Pulsed TA = -25 C 25 C 75 C 125 C 1.0 0.1 1.0 10 100 RDS (on) - Drain to Source On-State Resistance - PW - Pulse Width - s DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1.5 Pulsed 0.5 0 Pulsed 2.0 1.0 1.0 10 30 VDS = 10 V ID = 1 mA 4.0 3.0 2.0 1.0 100 0 -50 0 50 100 Tch - Channel Temperature - C ID - Drain Current - A 4 20 GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VGS (off) - Gate to Source Cutoff Voltage - V RDS (on) - Drain to Source On-State Resistance - DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 0 10 VGS - Gate to Source Voltage - V ID - Drain Current - A 3.0 ID = 6 A 3A 1.5 A 1.0 Data Sheet D11394EJ3V0DS 150 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed 1.6 ISD - Diode Forward Current - A ID = 6 A 3A 1.2 0.8 0.4 100 10 1.0 0.1 VGS = 10 V 0 -50 0 50 100 150 0 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1 000 VGS = 0 f = 1 MHz Ciss 100 Crss 10 100 tr tf 100 td(on) td(off) 10 1.0 0.1 1 000 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 000 100 10 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 ID = 10 A 14 VDD = 400 V VGS 250 V 300 12 125 V 10 400 VDS - Drain to Source Voltage - V di/dt = 50 A/us VGS = 0 1.0 VDS = 150 V VGS = 10 V RG = 10 10 100 1.0 VDS - Drain to Source Voltage - V 0.1 1.5 SWITCHING CHARACTERISTICS Coss 10 1 1.0 1 000 td (on), tr, td (off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 10 000 0.5 VSD - Source to Drain Voltage - V Tch - Channel Temperature -C trr - Reverse Recovery Time - ns VGS = 0 10 V 200 8 6 100 4 VDS 0 10 2 20 30 VGS - Gate to Source Voltage - V RDS (on) - Drain to Source On-State Resistance - 2SK2361, 2362 40 Qg - Gate Charge - nC ID - Drain Current - A Data Sheet D11394EJ3V0DS 5 2SK2361, 2362 SINGLE AVALANCHE ENERGY vs. STARTING CHANNEL TEMPERATURE SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 ID (peak) = IAS RG = 25 VGS = 20 V 0 V VDD = 150 V 142 mJ IAS - Single Avalanche Current - A EAS - Single Avalanche Energy - mJ 150 100 50 25 50 75 100 125 150 175 10 IAS = 10 A EAS =1 42 m J 1.0 0.1 100 Starting Tch-Starting Channel Temperature - C 6 RG = 25 VDD = 150 V VGS = 20 V 0 Starting Tch = 25 K Data Sheet D11394EJ3V0DS 1.0 m 10 m L - Inductive load - H 100 m 2SK2361, 2362 PACKAGE DRAWING (Unit: mm) 2 1.5 TYP. 3 3.00.25 1 4.7 MAX. 6.0 TYP. 4 4.50.2 3.20.2 15.7 MAX. 5.0 TYP. 20.00.25 1.0 TYP. TO-3P (MP-88) 19 MIN. <R> 1.00.2 2.20.2 5.45 TYP. 0.60.1 2.80.1 5.45 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) EQUIVALENT CIRCUIT Drain Body Diode Gate Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Data Sheet D11394EJ3V0DS 7 2SK2361, 2362 * The information in this document is current as of November, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1