Si8660/61/62/63 Data Sheet
Low Power Six-Channel Digital Isolator
Silicon Lab's family of ultra-low-power digital isolators are CMOS devices offering sub-
stantial data rate, propagation delay, power, size, reliability, and external BOM advan-
tages over legacy isolation technologies. The operating parameters of these products
remain stable across wide temperature ranges and throughout device service life for
ease of design and highly uniform performance. All device versions have Schmitt trigger
inputs for high noise immunity and only require VDD bypass capacitors.
Data rates up to 150 Mbps are supported, and all devices achieve propagation delays of
less than 10 ns. Ordering options include a choice of isolation ratings (1.0, 2.5, 3.75 and
5 kV) and a selectable fail-safe operating mode to control the default output state during
power loss. All products >1 kVRMS are safety certified by UL, CSA, VDE, and CQC, and
products in wide-body packages support reinforced insulation withstanding up to 5
kVRMS.
Automotive Grade is available for certain part numbers. These products are built using
automotive-specific flows at all steps in the manufacturing process to ensure the robust-
ness and low defectivity required for automotive applications.
KEY FEATURES
• High-speed operation
•DC to 150 Mbps
• No start-up initialization required
• Wide Operating Supply Voltage
• 2.5–5.5 V
• Up to 5000 VRMS isolation
• 60-year life at rated working voltage
• High electromagnetic immunity
• Ultra low power (typical)
• 5 V Operation
• 1.6 mA per channel at 1 Mbps
• 5.5 mA per channel at 100 Mbps
• 2.5 V Operation
• 1.5 mA per channel at 1 Mbps
• 3.5 mA per channel at 100 Mbps
• Schmitt trigger inputs
• Selectable fail-safe mode
• Default high or low output (ordering
option)
• Precise timing (typical)
• 10 ns propagation delay
• 1.5 ns pulse width distortion
• 0.5 ns channel-channel skew
• 2 ns propagation delay skew
• 5 ns minimum pulse width
• Transient Immunity 50 kV/µs
• AEC-Q100 qualification
• Wide temperature range
• –40 to 125 °C
• RoHS-compliant packages
• SOIC-16 wide body
• SOIC-16 narrow body
• QSOP-16
• Automotive-grade OPNs available
• AIAG compliant PPAP documentation
support
• IMDS and CAMDS listing support
Industrial Applications
•Industrial automation systems
• Medical electronics
• Isolated switch mode supplies
• Isolated ADC, DAC
• Motor control
• Power inverters
• Communication systems
Safety Regulatory Approvals
• UL 1577 recognized
• Up to 5000 VRMS for 1 minute
• CSA component notice 5A approval
• IEC 60950-1, 62368-1, 60601-1 (re-
inforced insulation)
• VDE certification conformity
• VDE 0884-10
• EN60950-1 (reinforced insulation)
• CQC certification approval
• GB4943.1
Automotive Applications
•On-board chargers
• Battery management systems
• Charging stations
• Traction inverters
• Hybrid Electric Vehicles
• Battery Electric Vehicles
silabs.com | Building a more connected world. Rev. 1.72
1. Ordering Guide
Table 1.1. Ordering Guide for Valid OPNs 1,2, 3
Ordering Part Num-
ber (OPN)
Number of
Inputs
VDD1 Side
Number of
Inputs
VDD2 Side
Max Data
Rate
(Mbps)
Default
Output
State
Isolation Rating
(kV)
Temp (°C) Package
QSOP-16 Packages
Si8660BB-B-IU 6 0 150 Low 2.5 –40 to 125 °C QSOP-16
Si8660EB-B-IU 6 0 150 High 2.5 –40 to 125 °C QSOP-16
Si8661BB-B-IU 5 1 150 Low 2.5 –40 to 125 °C QSOP-16
Si8661EB-B-IU 5 1 150 High 2.5 –40 to 125 °C QSOP-16
Si8662BB-B-IU 4 2 150 Low 2.5 –40 to 125 °C QSOP-16
Si8662EB-B-IU 4 2 150 High 2.5 –40 to 125 °C QSOP-16
Si8663BB-B-IU 3 3 150 Low 2.5 –40 to 125 °C QSOP-16
Si8663EB-B-IU 3 3 150 High 2.5 –40 to 125 °C QSOP-16
SOIC-16 Packages
Si8660BA-B-IS1 6 0 150 Low 1.0 –40 to 125 °C NB SOIC-16
Si8660BB-B-IS1 6 0 150 Low 2.5 –40 to 125 °C NB SOIC-16
Si8660BC-B-IS1 6 0 150 Low 3.75 –40 to 125 °C NB SOIC-16
Si8660EC-B-IS1 6 0 150 High 3.75 –40 to 125 °C NB SOIC-16
Si8660BD-B-IS 6 0 150 Low 5.0 –40 to 125 °C WB SOIC-16
Si8660ED-B-IS 6 0 150 High 5.0 –40 to 125 °C WB SOIC-16
Si8661BB-B-IS1 5 1 150 Low 2.5 –40 to 125 °C NB SOIC-16
Si8661BC-B-IS1 5 1 150 Low 3.75 –40 to 125 °C NB SOIC-16
Si8661EC-B-IS1 5 1 150 High 3.75 –40 to 125 °C NB SOIC-16
Si8661BD-B-IS 5 1 150 Low 5.0 –40 to 125 °C WB SOIC-16
Si8661ED-B-IS 5 1 150 High 5.0 –40 to 125 °C WB SOIC-16
Si8661BD-B-IS2 5 1 150 Low 5.0 –40 to 125 °C WB SOIC-16
(8 mm cree-
page)4
Si8662BB-B-IS1 4 2 150 Low 2.5 –40 to 125 °C NB SOIC-16
Si8662BC-B-IS1 4 2 150 Low 3.75 –40 to 125 °C NB SOIC-16
Si8662EC-B-IS1 4 2 150 High 3.75 –40 to 125 °C NB SOIC-16
Si8662BD-B-IS 4 2 150 Low 5.0 –40 to 125 °C WB SOIC-16
Si8662ED-B-IS 4 2 150 High 5.0 –40 to 125 °C WB SOIC-16
Si8663BB-B-IS1 3 3 150 Low 2.5 –40 to 125 °C NB SOIC-16
Si8663BC-B-IS1 3 3 150 Low 3.75 –40 to 125 °C NB SOIC-16
Si8663EC-B-IS1 3 3 150 High 3.75 –40 to 125 °C NB SOIC-16
Si8663BD-B-IS 3 3 150 Low 5.0 –40 to 125 °C WB SOIC-16
Si8660/61/62/63 Data Sheet
Ordering Guide
silabs.com | Building a more connected world. Rev. 1.72 | 2
Ordering Part Num-
ber (OPN)
Number of
Inputs
VDD1 Side
Number of
Inputs
VDD2 Side
Max Data
Rate
(Mbps)
Default
Output
State
Isolation Rating
(kV)
Temp (°C) Package
Si8663ED-B-IS 3 3 150 High 5.0 –40 to 125 °C WB SOIC-16
Notes:
1. All packages are RoHS-compliant with peak reflow temperatures of 260 °C according to the JEDEC industry standard classifica-
tions and peak solder temperatures.
2. “Si” and “SI” are used interchangeably.
3. An "R" at the end of the part number denotes tape and reel packaging option.
4. The package designated IS2 has a design that eliminates tie bars, thus allowing for extra creepage distance while maintaining
standard WB SOIC-16 package dimensions and land pattern.
Si8660/61/62/63 Data Sheet
Ordering Guide
silabs.com | Building a more connected world. Rev. 1.72 | 3
Automotive Grade OPNs
Automotive-grade devices are built using automotive-specific flows at all steps in the manufacturing process to ensure robustness and
low defectivity. These devices are supported with AIAG-compliant Production Part Approval Process (PPAP) documentation, and fea-
ture International Material Data System (IMDS) and China Automotive Material Data System (CAMDS) listing. Qualifications are compli-
ant with AEC-Q100, and a zero-defect methodology is maintained throughout definition, design, evaluation, qualification, and mass pro-
duction steps.
Table 1.2. Ordering Guide for Automotive Grade OPNs1, 2, 4, 5
Ordering Part
Number (OPN)
Number of
Inputs
VDD1 Side
Number of
Inputs
VDD2 Side
Max Data
Rate
(Mbps)
Default
Output
State
Isolation rating
(kV)
Temp (°C) Package
SOIC-16 Packages
Si8660BC-AS1 6 0 150 Low 3.75 –40 to 125 °C NB SOIC-16
Si8660BD-AS 6 0 150 Low 5.0 –40 to 125 °C WB SOIC-16
Si8661BB-AS1 5 1 150 Low 2.5 –40 to 125 °C NB SOIC-16
Si8661BD-AS 5 1 150 Low 5.0 –40 to 125 °C WB SOIC-16
Si8662BB-AS1 4 2 150 Low 2.5 –40 to 125 °C NB SOIC-16
Si8662BC-AS1 4 2 150 Low 3.75 –40 to 125 °C NB SOIC-16
Si8662BD-AS 4 2 150 Low 5.0 –40 to 125 °C WB SOIC-16
Si8663BD-AS 3 3 150 Low 5.0 –40 to 125 °C WB SOIC-16
Note:
1. All packages are RoHS-compliant with peak reflow temperatures of 260 °C according to the JEDEC industry standard classifica-
tions.
2. “Si” and “SI” are used interchangeably.
3. An "R" at the end of the part number denotes tape and reel packaging option.
4. Automotive-Grade devices (with an "–A" suffix) are identical in construction materials, topside marking, and electrical parameters
to their Industrial-Grade (with a "–I" suffix) version counterparts. Automotive-Grade products are produced utilizing full automotive
process flows and additional statistical process controls throughout the manufacturing flow. The Automotive-Grade part number is
included on shipping labels.
5. Additional Ordering Part Numbers may be available in Automotive-Grade. Please contact your local Silicon Labs sales represen-
tative for further information.
Si8660/61/62/63 Data Sheet
Ordering Guide
silabs.com | Building a more connected world. Rev. 1.72 | 4
Table of Contents
1. Ordering Guide ..............................2
2. Functional Description............................6
2.1 Theory of Operation ............................6
2.2 Eye Diagram...............................7
3. Device Operation ..............................8
3.1 Device Startup ..............................8
3.2 Undervoltage Lockout ...........................9
3.3 Layout Recommendations ..........................9
3.3.1 Supply Bypass ............................9
3.3.2 Output Pin Termination..........................9
3.4 Fail-Safe Operating Mode ..........................9
3.5 Typical Performance Characteristics.......................10
4. Electrical Specifications ..........................12
5. Pin Descriptions .............................28
6. Package Outline (16-Pin Wide Body SOIC) ...................29
7. Land Pattern (16-Pin Wide-Body SOIC)..................... 31
8. Package Outline (16-Pin Narrow Body SOIC) ..................32
9. Land Pattern (16-Pin Narrow Body SOIC) ....................34
10. Package Outline (16-Pin QSOP) .......................35
11. Land Pattern (16-Pin QSOP) ........................37
12. Top Marking (16-Pin Wide Body SOIC) ....................38
13. Top Marking (16-Pin Narrow Body SOIC) ...................39
14. Top Marking (16-Pin QSOP) ........................40
15. Revision History............................. 41
silabs.com | Building a more connected world. Rev. 1.72 | 5
2. Functional Description
2.1 Theory of Operation
The operation of an Si866x channel is analogous to that of an opto coupler, except an RF carrier is modulated instead of light. This
simple architecture provides a robust isolated data path and requires no special considerations or initialization at start-up. A simplified
block diagram for a single Si866x channel is shown in the figure below.
RF
OSCILLATOR
MODULATOR DEMODULATOR
A B
Semiconductor-
Based Isolation
Barrier
Transmitter Receiver
Figure 2.1. Simplified Channel Diagram
A channel consists of an RF Transmitter and RF Receiver separated by a semiconductor-based isolation barrier. Referring to the
Transmitter, input A modulates the carrier provided by an RF oscillator using on/off keying. The Receiver contains a demodulator that
decodes the input state according to its RF energy content and applies the result to output B via the output driver. This RF on/off keying
scheme is superior to pulse code schemes as it provides best-in-class noise immunity, low power consumption, and better immunity to
magnetic fields. See the figure below for more details.
Input Signal
Output Signal
Modulation Signal
Figure 2.2. Modulation Scheme
Si8660/61/62/63 Data Sheet
Functional Description
silabs.com | Building a more connected world. Rev. 1.72 | 6
2.2 Eye Diagram
The figure below illustrates an eye-diagram taken on an Si8660. For the data source, the test used an Anritsu (MP1763C) Pulse Pattern
Generator set to 1000 ns/div. The output of the generator's clock and data from an Si8660 were captured on an oscilloscope. The re-
sults illustrate that data integrity was maintained even at the high data rate of 150 Mbps. The results also show that 2 ns pulse width
distortion and 350 ps peak jitter were exhibited.
Figure 2.3. Eye Diagram
Si8660/61/62/63 Data Sheet
Functional Description
silabs.com | Building a more connected world. Rev. 1.72 | 7
3. Device Operation
Device behavior during start-up, normal operation, and shutdown is shown in Figure 3.1 Device Behavior during Normal Operation on
page 9, where UVLO+ and UVLO- are the positive-going and negative-going thresholds respectively. Refer to the table below to
determine outputs when power supply (VDD) is not present.
Table 3.1. Si866x Logic Operation
VI Input 1,2 VDDI State1,3,4 VDDO State1,3,4 VO Output1,2 Comments
H P P H Normal operation.
L P P L
X 5UP P L6
H6
Upon transition of VDDI from unpowered to pow-
ered, VO returns to the same state as VI in less
than 1 µs.
X5P UP Undetermined Upon transition of VDDO from unpowered to pow-
ered, VO returns to the same state as VI within 1
µs.
Notes:
1. VDDI and VDDO are the input and output power supplies. VI and VO are the respective input and output terminals.
2. X = not applicable; H = Logic High; L = Logic Low; Hi-Z = High Impedance.
3. “Powered” state (P) is defined as 2.5 V < VDD < 5.5 V.
4. “Unpowered” state (UP) is defined as VDD = 0 V.
5. Note that an I/O can power the die for a given side through an internal diode if its source has adequate current.
6. See 1. Ordering Guide for details. This is the selectable fail-safe operating mode (ordering option). Some devices have default
output state = H, and some have default output state = L, depending on the ordering part number (OPN). For default high devi-
ces, the data channels have pull-ups on inputs/outputs. For default low devices, the data channels have pull-downs on inputs/
outputs.
3.1 Device Startup
Outputs are held low during powerup until VDD is above the UVLO threshold for time period tSTART. Following this, the outputs follow
the states of inputs.
Si8660/61/62/63 Data Sheet
Device Operation
silabs.com | Building a more connected world. Rev. 1.72 | 8
3.2 Undervoltage Lockout
Undervoltage Lockout (UVLO) is provided to prevent erroneous operation during device startup and shutdown or when VDD is below its
specified operating circuits range. Both Side A and Side B each have their own undervoltage lockout monitors. Each side can enter or
exit UVLO independently. For example, Side A unconditionally enters UVLO when VDD1 falls below VDD1(UVLO–) and exits UVLO when
VDD1 rises above VDD1(UVLO+). Side B operates the same as Side A with respect to its VDD2 supply.
INPUT
VDD1
UVLO-
VDD2
UVLO+
UVLO-
UVLO+
OUTPUT
tSTART tSTART tSTART tPHL tPLH
tSD
Figure 3.1. Device Behavior during Normal Operation
3.3 Layout Recommendations
To ensure safety in the end user application, high voltage circuits (i.e., circuits with >30 VAC) must be physically separated from the
safety extra-low voltage circuits (SELV is a circuit with <30 VAC) by a certain distance (creepage/clearance). If a component, such as a
digital isolator, straddles this isolation barrier, it must meet those creepage/clearance requirements and also provide a sufficiently large
high-voltage breakdown protection rating (commonly referred to as working voltage protection). Table 4.5 Regulatory Information 1 on
page 23 and Table 4.6 Insulation and Safety-Related Specifications on page 23 detail the working voltage and creepage/clearance
capabilities of the Si86xx. These tables also detail the component standards (UL1577, IEC60747, CSA 5A), which are readily accepted
by certification bodies to provide proof for end-system specifications requirements. Refer to the end-system specification (61010-1,
60950-1, 60601-1, etc.) requirements before starting any design that uses a digital isolator.
3.3.1 Supply Bypass
The Si866x family requires a 0.1 µF bypass capacitor between VDD1 and GND1 and VDD2 and GND2. The capacitor should be placed
as close as possible to the package. To enhance the robustness of a design, the user may also include resistors (50–300 Ω ) in series
with the inputs and outputs if the system is excessively noisy.
3.3.2 Output Pin Termination
The nominal output impedance of an isolator driver channel is approximately 50 Ω, ±40%, which is a combination of the value of the on-
chip series termination resistor and channel resistance of the output driver FET. When driving loads where transmission line effects will
be a factor, output pins should be appropriately terminated with controlled impedance PCB traces.
3.4 Fail-Safe Operating Mode
Si86xx devices feature a selectable (by ordering option) mode whereby the default output state (when the input supply is unpowered)
can either be a logic high or logic low when the output supply is powered. See Table 3.1 Si866x Logic Operation on page 8 and
1. Ordering Guide for more information.
Si8660/61/62/63 Data Sheet
Device Operation
silabs.com | Building a more connected world. Rev. 1.72 | 9
3.5 Typical Performance Characteristics
The typical performance characteristics depicted in the following diagrams are for information purposes only. Refer to the electrical
characteristics tables for actual specification limits.
Figure 3.2. Si8660 Typical VDD1 Supply Current vs. Data Rate
5, 3.3, and 2.5 V Operation
Figure 3.3. Si8661 Typical VDD1 Supply Current vs. Data Rate
5, 3.3, and 2.5 V Operation
(15 pF Load)
Figure 3.4. Si8662 Typical VDD1 Supply Current vs. Data Rate
5, 3.3, and 2.5 V Operation
(15 pF Load)
Figure 3.5. Si8660 Typical VDD2 Supply Current vs. Data Rate
5, 3.3, and 2.5 V Operation
(15 pF Load)
Si8660/61/62/63 Data Sheet
Device Operation
silabs.com | Building a more connected world. Rev. 1.72 | 10
Figure 3.6. Si8661 Typical VDD2 Supply Current vs. Data Rate
5, 3.3, and 2.5 V Operation
(15 pF Load)
Figure 3.7. Si8662 Typical VDD2 Supply Current vs. Data Rate
5, 3.3, and 2.5 V Operation
(15 pF Load)
Figure 3.8. Si8663 Typical VDD1 or VDD2 Supply Current vs.
Data Rate 5, 3.3, and 2.5 V Operation (15 pF Load)
Figure 3.9. Propagation Delay vs. Temperature
Si8660/61/62/63 Data Sheet
Device Operation
silabs.com | Building a more connected world. Rev. 1.72 | 11
4. Electrical Specifications
Table 4.1. Recommended Operating Conditions
Parameter Symbol Min Typ Max Unit
Junction Operating Temperature TJ— — 150 °C
Ambient Operating Temperature 1TA–40 25 125 °C
Supply Voltage
VDD1 2.375 — 5.5 V
VDD2 2.375 — 5.5 V
Note:
1. The maximum ambient temperature is dependent on data frequency, output loading, number of operating channels, and supply
voltage.
Table 4.2. Electrical Characteristics
(VDD1 = 5 V ±10%, VDD2 = 5 V ±10%, TA = –40 to 125 °C)
Parameter Symbol Test Condition Min Typ Max Unit
VDD Undervoltage Threshold VDDUV+ VDD1, VDD2 rising 1.95 2.24 2.375 V
VDD Undervoltage Threshold VDDUV– VDD1, VDD2 falling 1.88 2.16 2.325 V
VDD Undervoltage
Hysteresis VDDHYS 50 70 95 mV
Positive-Going Input Threshold VT+ All inputs rising 1.4 1.67 1.9 V
Negative-Going
Input Threshold VT– All inputs falling 1.0 1.23 1.4 V
Input Hysteresis VHYS 0.38 0.44 0.50 V
High Level Input Voltage VIH 2.0 — — V
Low Level Input Voltage VIL — — 0.8 V
High Level Output Voltage VOH loh = –4 mA VDD1,VDD2 – 0.4 4.8 — V
Low Level Output Voltage VOL lol = 4 mA — 0.2 0.4 V
Input Leakage Current IL— — ±10 µA
Output Impedance 1ZO— 50 — Ω
DC Supply Current (All Inputs 0 V or at Supply)
Si8660Bx, Ex
VDD1
VDD2
VDD1
VDD2
VI = 0(Bx), 1(Ex)
VI = 0(Bx), 1(Ex)
VI = 1(Bx), 0(Ex)
VI = 1(Bx), 0(Ex)
—
—
—
—
1.2
3.5
8.8
3.7
1.9
5.3
12.3
5.6
mA
Si8660/61/62/63 Data Sheet
Electrical Specifications
silabs.com | Building a more connected world. Rev. 1.72 | 12
Parameter Symbol Test Condition Min Typ Max Unit
Si8661Bx, Ex
VDD1
VDD2
VDD1
VDD2
VI = 0(Bx), 1(Ex)
VI = 0(Bx), 1(Ex)
VI = 1(Bx), 0(Ex)
VI = 1(Bx), 0(Ex)
—
—
—
—
1.7
3.4
7.9
4.8
2.7
5.1
11.1
7.2
mA
Si8662Bx, Ex
VDD1
VDD2
VDD1
VDD2
VI = 0(Bx), 1(Ex)
VI = 0(Bx), 1(Ex)
VI = 1(Bx), 0(Ex)
VI = 1(Bx), 0(Ex)
—
—
—
—
2.2
3.0
7.5
5.6
3.3
4.5
10.5
8.4
mA
Si8663Bx, Ex
VDD1
VDD2
VDD1
VDD2
VI = 0(Bx), 1(Ex)
VI = 0(Bx), 1(Ex)
VI = 1(Bx), 0(Ex)
VI = 1(Bx), 0(Ex)
—
—
—
—
2.6
2.6
6.5
6.5
3.9
3.9
9.1
9.1
mA
1 Mbps Supply Current (All Inputs = 500 kHz Square Wave, CI = 15 pF on all Outputs)
Si8660Bx, Ex
VDD1
VDD2
—
—
5.0
4.2
7.0
5.9
mA
Si8661Bx, Ex
VDD1
VDD2
—
—
4.9
4.6
6.9
6.4
mA
Si8662Bx, Ex
VDD1
VDD2
—
—
5.1
4.7
7.1
6.6
mA
Si8663Bx, Ex
VDD1
VDD2
—
—
4.9
4.9
6.8
6.8
mA
10 Mbps Supply Current (All Inputs = 5 MHz Square Wave, CI = 15 pF on all Outputs)
Si8660Bx, Ex
VDD1
VDD2
—
—
5.0
5.9
7.0
8.3
mA
Si8661Bx, Ex
VDD1
VDD2
—
—
5.2
6.1
7.3
8.5
mA
Si8660/61/62/63 Data Sheet
Electrical Specifications
silabs.com | Building a more connected world. Rev. 1.72 | 13
Parameter Symbol Test Condition Min Typ Max Unit
Si8662Bx, Ex
VDD1
VDD2
—
—
5.6
5.9
7.9
8.2
mA
Si8663Bx, Ex
VDD1
VDD2
—
—
5.7
5.7
8.0
8.0
mA
100 Mbps Supply Current (All Inputs = 50 MHz Square Wave, CI = 15 pF on All Outputs)
Si8660Bx, Ex
VDD1
VDD2
—
—
5.0
26.2
7.0
34.1
mA
Si8661Bx, Ex
VDD1
VDD2
—
—
8.8
23
11.8
29.8
mA
Si8662Bx, Ex
VDD1
VDD2
—
—
12.8
19.4
16.6
25.2
mA
Si8663Bx, Ex
VDD1
VDD2
—
—
16.4
16.4
21.3
21.3
mA
Timing Characteristics
Si866xBx, Ex
Maximum Data Rate 0 — 150 Mbps
Minimum Pulse Width — — 5.0 ns
Propagation Delay tPHL, tPLH See Figure 4.1 Propagation
Delay Timing on page 15 5.0 8.0 13 ns
Pulse Width Distortion
|tPLH - tPHL|PWD See Figure 4.1 Propagation
Delay Timing on page 15 — 0.2 4.5 ns
Propagation Delay Skew 2 tPSK(P-P) — 2.0 4.5 ns
Channel-Channel Skew tPSK — 0.4 2.5 ns
All Models
Output Rise Time tr
CL = 15 pF
(See Figure 4.1 Propagation
Delay Timing on page 15)
— 2.5 4.0 ns
Output Fall Time tf
CL = 15 pF
(See Figure 4.1 Propagation
Delay Timing on page 15)
— 2.5 4.0 ns
Peak Eye Diagram Jitter tJIT(PK) See — 350 — ps
Si8660/61/62/63 Data Sheet
Electrical Specifications
silabs.com | Building a more connected world. Rev. 1.72 | 14
Parameter Symbol Test Condition Min Typ Max Unit
Common Mode
Transient Immunity CMTI
VI = VDD or 0 V
VCM = 1500 V
(See Figure 4.2 Common
Mode Transient Immunity
Test Circuit on page 16)
35 50 — kV/µs
Startup Time 3tSU — 15 40 µs
1. The nominal output impedance of an isolator driver channel is approximately 50 Ω, ±40%, which is a combination of the value of
the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads where transmission
line effects will be a factor, output pins should be appropriately terminated with controlled impedance PCB traces.
2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at the same
supply voltages, load, and ambient temperature.
3. Start-up time is the time period from the application of power to valid data at the output.
Typical
Input
tPLH tPHL
Typical
Output
trtf
90%
10%
90%
10%
1.4 V
1.4 V
Figure 4.1. Propagation Delay Timing
Si8660/61/62/63 Data Sheet
Electrical Specifications
silabs.com | Building a more connected world. Rev. 1.72 | 15
Oscilloscope
3 to 5 V
Isolated
Supply
Si86xx
VDD2
OUTPUT
3 to 5 V
Supply
High Voltage
Surge Generator
Vcm Surge
Output
High Voltage
Differential
Probe
GND2GND1
VDD1
INPUT
Input
Signal
Switch
Input
Output
Isolated
Ground
Figure 4.2. Common Mode Transient Immunity Test Circuit
Table 4.3. Electrical Characteristics
(VDD1 = 3.3 V ±10%, VDD2 = 3.3 V ±10%, TA = –40 to 125 °C)
Parameter Symbol Test Condition Min Typ Max Unit
VDD Undervoltage Threshold VDDUV+ VDD1, VDD2 rising 1.95 2.24 2.375 V
VDD Undervoltage Threshold VDDUV– VDD1, VDD2 falling 1.88 2.16 2.325 V
VDD Undervoltage Hysteresis VDDHYS 50 70 95 mV
Positive-Going Input Threshold VT+ All inputs rising 1.4 1.67 1.9 V
Negative-Going Input Threshold VT– All inputs falling 1.0 1.23 1.4 V
Input Hysteresis VHYS 0.38 0.44 0.50 V
High Level Input Voltage VIH 2.0 — — V
Low Level Input Voltage VIL — — 0.8 V
High Level Output Voltage VOH loh = –4 mA VDD1,VDD2 – 0.4 3.1 — V
Low Level Output Voltage VOL lol = 4 mA — 0.2 0.4 V
Input Leakage Current IL— — ±10 µA
Output Impedance ZO— 50 — Ω
DC Supply Current (All Inputs 0 V or at Supply)
Si8660/61/62/63 Data Sheet
Electrical Specifications
silabs.com | Building a more connected world. Rev. 1.72 | 16
Parameter Symbol Test Condition Min Typ Max Unit
Si8660Bx, Ex
VDD1
VDD2
VDD1
VDD2
VI = 0(Bx), 1(Ex)
VI = 0(Bx), 1(Ex)
VI = 1(Bx), 0(Ex)
VI = 1(Bx), 0(Ex)
—
—
—
—
1.2
3.5
8.8
3.7
1.9
5.3
12.3
5.6
mA
Si8661Bx, Ex
VDD1
VDD2
VDD1
VDD2
VI = 0(Bx), 1(Ex)
VI = 0(Bx), 1(Ex)
VI = 1(Bx), 0(Ex)
VI = 1(Bx), 0(Ex)
—
—
—
—
1.7
3.4
7.9
4.8
2.7
5.1
11.1
7.2
mA
Si8662Bx, Ex
VDD1
VDD2
VDD1
VDD2
VI = 0(Bx), 1(Ex)
VI = 0(Bx), 1(Ex)
VI = 1(Bx), 0(Ex)
VI = 1(Bx), 0(Ex)
—
—
—
—
2.2
3.0
7.5
5.6
3.3
4.5
10.5
8.4
mA
Si8663Bx, Ex
VDD1
VDD2
VDD1
VDD2
VI = 0(Bx), 1(Ex)
VI = 0(Bx), 1(Ex)
VI = 1(Bx), 0(Ex)
VI = 1(Bx), 0(Ex)
—
—
—
—
2.6
2.6
6.5
6.5
3.9
3.9
9.1
9.1
mA
1 Mbps Supply Current (All Inputs = 500 kHz Square Wave, CI = 15 pF on All Outputs)
Si8660Bx, Ex
VDD1
VDD2
—
—
5.0
4.2
7.0
5.9
mA
Si8661Bx, Ex
VDD1
VDD2
—
—
4.9
4.6
6.9
6.4
mA
Si8662Bx, Ex
VDD1
VDD2
—
—
5.1
4.7
7.1
6.6
mA
Si8663Bx, Ex
VDD1
VDD2
—
—
4.9
4.9
6.8
6.8
mA
10 Mbps Supply Current (All Inputs = 5 MHz Square Wave, CI = 15 pF on All Outputs)
Si8660/61/62/63 Data Sheet
Electrical Specifications
silabs.com | Building a more connected world. Rev. 1.72 | 17
Parameter Symbol Test Condition Min Typ Max Unit
Si8660Bx, Ex
VDD1
VDD2
—
—
5.0
5.0
7.0
7.0
mA
Si8661Bx, Ex
VDD1
VDD2
—
—
5.0
5.3
7.0
7.4
mA
Si8662Bx, Ex
VDD1
VDD2
—
—
5.3
5.2
7.4
7.3
mA
Si8663Bx, Ex
VDD1
VDD2
—
—
5.2
5.2
7.3
7.3
mA
100 Mbps Supply Current (All Inputs = 50 MHz Square Wave, CI = 15 pF on All Outputs)
Si8660Bx, Ex
VDD1
VDD2
—
—
5.0
18.3
7.0
23.8
mA
Si8661Bx, Ex
VDD1
VDD2
—
—
7.4
16.4
9.9
21.3
mA
Si8662Bx, Ex
VDD1
VDD2
—
—
10
14.1
13
18.3
mA
Si8663Bx, Ex
VDD1
VDD2
—
—
12.3
12.3
15.9
15.9
mA
Timing Characteristics
Si866xBx, Ex
Maximum Data Rate 0 — 150 Mbps
Minimum Pulse Width — — 5.0 ns
Propagation Delay tPHL, tPLH See Figure 4.1 Propagation
Delay Timing on page 15 5.0 8.0 13 ns
Pulse Width Distortion
|tPLH - tPHL|PWD See Figure 4.1 Propagation
Delay Timing on page 15 — 0.2 4.5 ns
Propagation Delay Skew 2tPSK(P-P) — 2.0 4.5 ns
Channel-Channel Skew tPSK — 0.4 2.5 ns
All Models
Si8660/61/62/63 Data Sheet
Electrical Specifications
silabs.com | Building a more connected world. Rev. 1.72 | 18
Parameter Symbol Test Condition Min Typ Max Unit
Output Rise Time tr
CL = 15 pF
See Figure 4.1 Propagation
Delay Timing on page 15
— 2.5 4.0 ns
Output Fall Time tf
CL = 15 pF
See Figure 4.1 Propagation
Delay Timing on page 15
— 2.5 4.0 ns
Peak Eye Diagram Jitter tJIT(PK) See Figure 2.3 Eye Diagram
on page 7— 350 — ps
Common Mode Transient
Immunity CMTI
VI = VDD or 0 V
VCM = 1500 V (See Figure
4.2 Common Mode Transi-
ent Immunity Test Circuit on
page 16)
35 50 — kV/µs
Startup Time 3tSU — 15 40 µs
Notes:
1. The nominal output impedance of an isolator driver channel is approximately 50 Ω, ±40%, which is a combination of the value of
the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads where transmission
line effects will be a factor, output pins should be appropriately terminated with controlled impedance PCB traces.
2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at the same
supply voltages, load, and ambient temperature.
3. Start-up time is the time period from the application of power to valid data at the output.
Si8660/61/62/63 Data Sheet
Electrical Specifications
silabs.com | Building a more connected world. Rev. 1.72 | 19