PD - 91393E IRHM7264SE JANSR2N7434 250V, N-CHANNEL REF: MIL-PRF-19500/661 RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) (R) RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM7264SE Radiation Level 100K Rads (Si) RDS(on) 0.11 ID 31A QPL Part Number JANSR2N7434 International Rectifiers RADHardTM HEXFET(R) MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. TO-254AA Features: ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight Units 31 19 124 250 2.0 20 500 31 25 2.5 -55 to 150 A W W/C V mJ A mJ V/ns o 300 (0.063 in. (1.6mm) from case for 10 sec.) 9.3 (Typical) C g For footnotes refer to the last page www.irf.com 1 6/1/01 IRHM7264SE @ Tj = 25C (Unless Otherwise Specified) Parameter Min BVDSS Drain-to-Source Breakdown Voltage BV DSS /TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS IGSS Qg Q gs Qgd td(on) tr td(off) tf LS + LD Typ Max Units Test Conditions 250 V VGS = 0V, ID = 1.0mA 0.32 V/C Reference to 25C, ID = 1.0mA 2.5 10 0.110 0.123 4.5 50 250 6.8 100 -100 210 50 110 30 130 100 90 Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance VGS = 12V, ID = 19A VGS = 12V, ID = 31A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 19A VDS= 200V ,VGS=0V VDS = 200V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 31A VDS = 125V V S( ) Electrical Characteristics Pre-Irradiation A nA nC VDD = 125V, ID =31A, VGS =12V, RG = 2.35 ns nH Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package) Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance 4000 1300 480 VGS = 0V, VDS = 25V f = 1.0MHz pF Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) 31 124 A VSD t rr Q RR Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1.4 700 16 V nS C ton Forward Turn-On Time Test Conditions Tj = 25C, IS = 31A, VGS = 0V Tj = 25C, IF = 31A, di/dt 100A/s VDD 50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient M i n Typ Max Units 0.50 0.21 48 Test Conditions C/W Typical socket mount Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Pre-Irradiation IRHM7264SE International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation Parameter BVDSS V/5JD IGSS IGSS IDSS RDS(on) RDS(on) VSD Units Test Conditions " V A VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20V VDS= 200V, VGS=0V 0.11 VGS = 12V, ID = 19A 0.11 VGS = 12V, ID = 19A 1.4 V VGS = 0V, ID = 31A 100K Rads (Si) Min Max Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source# $ On-State Resistance (TO-3) Static Drain-to-Source# $ 250 2.0 4.5 100 100 50 On-State Resistance (TO-254) Diode Forward Voltage# $ nA International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion LET MeV/(mg/cm )) Cu 28 Br 36.8 Energy (MeV) 285 305 Range (m) 43 39 V,5 (V) @V/5=0V @V/5=-5V @V/5=-10V @V/5=-15V @V/5=-20V 250 250 250 250 250 250 250 250 225 210 300 250 VDS 200 Cu 150 Br 100 50 0 0 -5 -10 -15 -20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHM7264SE 1000 Pre-Irradiation 1000 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V 100 100 10 1 0.1 5.0V 1 10 10 5.0V 20s PULSE WIDTH TJ = 25 C 0.01 0.1 1 0.1 100 3.0 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 100 TJ = 150 C 10 TJ = 25 C 1 V DS = 50V 20s PULSE WIDTH 6 7 8 9 10 11 12 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 1 10 100 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 5 20s PULSE WIDTH TJ = 150 C VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 0.1 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP ID = 31A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 6000 Ciss 4000 Coss 2000 0 Crss 1 10 20 VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 8000 IRHM7264SE VDS = 125V 16 12 8 4 0 100 ID = 31A VDS , Drain-to-Source Voltage (V) FOR TEST CIRCUIT SEE FIGURE 13 0 80 120 160 200 QG , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) I D , Drain Current (A) ISD , Reverse Drain Current (A) 40 100 10us 100 TJ = 150 C 10 100us 1ms 10 TJ = 25 C 1 0.2 V GS = 0 V 0.6 1.0 1.4 1.8 2.2 2.6 3.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 3.4 1 10ms TC = 25 C TJ = 150 C Single Pulse 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHM7264SE Pre-Irradiation 35 VGS ID , Drain Current (A) 30 RG 25 D.U.T. + -VDD VGS 20 Pulse Width 1 s Duty Factor 0.1 % 15 Fig 10a. Switching Time Test Circuit 10 VDS 5 0 RD VDS 90% 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 0.50 0.1 0.01 0.20 0.10 0.05 0.02 0.01 0.001 0.00001 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHM7264SE 15V L VDS D.U.T. RG V/5 20V IAS DRIVER + - VDD 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS A EAS , Single Pulse Avalanche Energy (mJ) 1000 TOP 800 BOTTOM ID 14.A 20.A 31A 600 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature( C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50K QG 12V .2F .3F 12 V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHM7264SE Pre-Irradiation Footnotes: Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias. Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 50V, starting TJ = 25C, L= 1.0 mH Peak IL = 31A, VGS = 12V ISD 31A, di/dt 300A/s, VDD 250V, TJ 150C 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with V DS Bias. 200 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions TO-254AA .12 ( .005 ) 13.84 ( .545 ) 13.59 ( .535 ) 3.78 ( .149 ) 3.53 ( .139 ) -A- 20.32 ( .800 ) 20.07 ( .790 ) 17.40 ( .685 ) 16.89 ( .665 ) 31.40 ( 1.235 ) 30.39 ( 1.199 ) 3.81 ( .150 ) 2X 6.60 ( .260 ) 6.32 ( .249 ) 1 2 13.84 ( .545 ) 13.59 ( .535 ) 3 -C- 3X 1.14 ( .045 ) 0.89 ( .035 ) .50 ( .020 ) .25 ( .010 ) -B1.27 ( .050 ) 1.02 ( .040 ) LEGEND 1 - COLL 2 - EMIT 3 - GATE 3.81 ( .150 ) M C A M B M C NOTES: IRHM57163SED IRHM57163SEU LEGEND 1- DRAIN 2- SOURCE 3- GATE CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.. Data and specifications subject to change without notice. 06/01 8 www.irf.com