Absolute Maximum RatingsAbsolute Maximum Ratings
Absolute Maximum RatingsAbsolute Maximum Ratings
Absolute Maximum Ratings
ParameterParameter
ParameterParameter
Parameter UnitsUnits
UnitsUnits
Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current 31
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 19
IDM Pulsed Drain Current ➀124
PD @ TC = 25°C Max. Power Dissipation 250 W
Linear Derating Factor 2.0 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy ➁500 mJ
IAR Avalanche Current ➀31 A
EAR Repetitive Avalanche Energy ➀25 mJ
dv/dt Peak Diode Recovery dv/dt ➂2.5 V/ns
TJOperating Junction -55 to 150
TSTG Storage Temperature Range
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10 sec.)
Weight 9.3 (Typical) g
Pre-IrradiationPre-Irradiation
Pre-IrradiationPre-Irradiation
Pre-Irradiation
oC
A
RADIATION HARDENEDRADIATION HARDENED
RADIATION HARDENEDRADIATION HARDENED
RADIATION HARDENED
POWER MOSFETPOWER MOSFET
POWER MOSFETPOWER MOSFET
POWER MOSFET
THRU-HOLE (TO-254AA)THRU-HOLE (TO-254AA)
THRU-HOLE (TO-254AA)THRU-HOLE (TO-254AA)
THRU-HOLE (TO-254AA)
6/1/01
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TO-254AATO-254AA
TO-254AATO-254AA
TO-254AA
Product SummaryProduct Summary
Product SummaryProduct Summary
Product Summary
Part Number Radiation Level Part Number Radiation Level
Part Number Radiation Level Part Number Radiation Level
Part Number Radiation Level R R
R R
RDS(on)DS(on)
DS(on)DS(on)
DS(on) I I
I I
ID D
D D
D QPL Part NumberQPL Part Number
QPL Part NumberQPL Part Number
QPL Part Number
IRHM7264SE 100K Rads (Si) 0.11Ω 31A
JANSR2N7434
Features:Features:
Features:Features:
Features:
!Single Event Effect (SEE) Hardened
!Ultra Low RDS(on)
!Low Total Gate Charge
!Proton Tolerant
!Simple Drive Requirements
!Ease of Paralleling
!Hermetically Sealed
!Light Weight
For footnotes refer to the last page
IRHM7264SEIRHM7264SE
IRHM7264SEIRHM7264SE
IRHM7264SE
JANSR2N7434JANSR2N7434
JANSR2N7434JANSR2N7434
JANSR2N7434
250V, N-CHANNEL250V, N-CHANNEL
250V, N-CHANNEL250V, N-CHANNEL
250V, N-CHANNEL
REF: MIL-PRF-19500/661REF: MIL-PRF-19500/661
REF: MIL-PRF-19500/661REF: MIL-PRF-19500/661
REF: MIL-PRF-19500/661
RAD HardRAD Hard
RAD HardRAD Hard
RAD Hard
HEXFETHEXFET
HEXFETHEXFET
HEXFET
®
TECHNOLOGY TECHNOLOGY
TECHNOLOGY TECHNOLOGY
TECHNOLOGY
International Rectifiers RADHardTM HEXFET® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
PD - 91393E
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Electrical CharacteristicsElectrical Characteristics
Electrical CharacteristicsElectrical Characteristics
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)@ Tj = 25°C (Unless Otherwise Specified)
@ Tj = 25°C (Unless Otherwise Specified)@ Tj = 25°C (Unless Otherwise Specified)
@ Tj = 25°C (Unless Otherwise Specified)
ParameterParameter
ParameterParameter
Parameter MinMin
MinMin
Min TypTyp
TypTyp
Typ MaxMax
MaxMax
Max UnitsUnits
UnitsUnits
Units Test ConditionsTest Conditions
Test ConditionsTest Conditions
Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 250 V VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown 0.32 V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State 0.110 VGS = 12V, ID = 19A
Resistance 0.123 VGS = 12V, ID = 31A
VGS(th) Gate Threshold Voltage 2.5 4.5 V VDS = VGS, ID = 1.0mA
gfs Forward Transconductance 10 S ( )V
DS > 15V, IDS = 19A ➃
IDSS Zero Gate Voltage Drain Current 50 VDS= 200V ,VGS=0V
250 VDS = 200V,
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward 100 VGS = 20V
IGSS Gate-to-Source Leakage Reverse -100 VGS = -20V
QgTotal Gate Charge 210 VGS =12V, ID = 31A
Qgs Gate-to-Source Charge 50 nC VDS = 125V
Qgd Gate-to-Drain (Miller) Charge 110
td(on) Turn-On Delay Time 30 VDD = 125V, ID =31A,
trRise Time 130 VGS =12V, RG = 2.35Ω
td(off) Turn-Off Delay Time 100
tfFall Time 90
LS + LDTotal Inductance 6.8
Ciss Input Capacitance 4000 VGS = 0V, VDS = 25V
Coss Output Capacitance 1300 pF f = 1.0MHz
Crss Reverse Transfer Capacitance 480
nA
Ω
➃
nH
ns
µA
Thermal ResistanceThermal Resistance
Thermal ResistanceThermal Resistance
Thermal Resistance
ParameterParameter
ParameterParameter
Parameter MinMin
MinMin
Min TypTyp
TypTyp
Typ MaxMax
MaxMax
Max UnitsUnits
UnitsUnits
Units Test ConditionsTest Conditions
Test ConditionsTest Conditions
Test Conditions
RthJC Junction-to-Case 0.50
RthCS Case-to-Sink 0.21 °C/W
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Source-Drain Diode Ratings and CharacteristicsSource-Drain Diode Ratings and Characteristics
Source-Drain Diode Ratings and CharacteristicsSource-Drain Diode Ratings and Characteristics
Source-Drain Diode Ratings and Characteristics
ParameterParameter
ParameterParameter
Parameter MinMin
MinMin
Min TypTyp
TypTyp
Typ MaxMax
MaxMax
Max UnitsUnits
UnitsUnits
Units Test ConditionsTest Conditions
Test ConditionsTest Conditions
Test Conditions
ISContinuous Source Current (Body Diode) 31
ISM Pulse Source Current (Body Diode) ➀ 124
VSD Diode Forward Voltage 1.4 V Tj = 25°C, IS = 31A, VGS = 0V ➃
trr Reverse Recovery Time 700 nS Tj = 25°C, IF = 31A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge 16 µCV
DD ≤ 50V ➃
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on the G&S Website.Note: Corresponding Spice and Saber models are available on the G&S Website.
Note: Corresponding Spice and Saber models are available on the G&S Website.Note: Corresponding Spice and Saber models are available on the G&S Website.
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
RthJA Junction-to-Ambient 48 Typical socket mount
Ω
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Pre-IrradiationPre-Irradiation
Pre-IrradiationPre-Irradiation
Pre-Irradiation IRHM7264SEIRHM7264SE
IRHM7264SEIRHM7264SE
IRHM7264SE
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Fig a.Fig a.
Fig a.Fig a.
Fig a. Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating AreaTable 2. Single Event Effect Safe Operating Area
Table 2. Single Event Effect Safe Operating AreaTable 2. Single Event Effect Safe Operating Area
Table 2. Single Event Effect Safe Operating Area
For footnotes refer to the last page
Parameter Parameter
Parameter Parameter
Parameter 100K Rads (Si) UnitsUnits
UnitsUnits
Units Test Conditions Test Conditions
Test Conditions Test Conditions
Test Conditions "
MinMin
MinMin
Min MaxMax
MaxMax
Max
BVDSS Drain-to-Source Breakdown Voltage 250 VVGS = 0V, ID = 1.0mA
V/5JD Gate Threshold Voltage 2.0 4.5 VGS = VDS, ID = 1.0mA
IGSS Gate-to-Source Leakage Forward 100 nA VGS = 20V
IGSS Gate-to-Source Leakage Reverse - 100 VGS = -20V
IDSS Zero Gate Voltage Drain Current 50 µA VDS= 200V, VGS=0V
RDS(on) Static Drain-to-Source#$
On-State Resistance (TO-3) 0.11 ΩVGS = 12V, ID = 19A
RDS(on) Static Drain-to-Source#$
On-State Resistance (TO-254) 0.11 Ω VGS = 12V, ID = 19A
VSD Diode Forward Voltage#$ 1.4 V VGS = 0V, ID = 31A
IonIon
IonIon
Ion LETLET
LETLET
LET Energy Range Energy Range
Energy Range Energy Range
Energy Range VV
VV
V,5,5
,5,5
,5 (V) (V)
(V) (V)
(V)
MeV/(mg/cm )) (MeV) (µm)
@V@V
@V@V
@V/5/5
/5/5
/5=0V @V=0V @V
=0V @V=0V @V
=0V @V/5/5
/5/5
/5=-5V @V=-5V @V
=-5V @V=-5V @V
=-5V @V/5/5
/5/5
/5=-10V @V=-10V @V
=-10V @V=-10V @V
=-10V @V/5/5
/5/5
/5=-15V @V=-15V @V
=-15V @V=-15V @V
=-15V @V/5/5
/5/5
/5=-20V=-20V
=-20V=-20V
=-20V
Cu 28 285 43 250 250 250 250 250
Br 36.8 305 39 250 250 250 225 210
0
50
100
150
200
250
300
0 -5 -10 -15 -20
VGS
VDS
Cu
Br
IRHM7264SEIRHM7264SE
IRHM7264SEIRHM7264SE
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4www.irf.com
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.01
0.1
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
0.1
1
10
100
5 6 7 8 9 10 11 12
V = 50V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
12V
31A
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IRHM7264SEIRHM7264SE
IRHM7264SE
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
0
2000
4000
6000
8000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
0 40 80 120 160 200
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
31A
V = 125V
DS
1
10
100
1000
1 10 100 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
1
10
100
1000
0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
IRHM7264SEIRHM7264SE
IRHM7264SEIRHM7264SE
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6www.irf.com
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
VGS
25 50 75 100 125 150
0
5
10
15
20
25
30
35
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
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IRHM7264SEIRHM7264SE
IRHM7264SE
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. VDS
ID
IG
3mA
VGS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
12 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
.
V/5
25 50 75 100 125 150
0
200
400
600
800
1000
Starting T , Junction Temperature( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
14.A
20.A
31A
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➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with VTotal Dose Irradiation with V
Total Dose Irradiation with VTotal Dose Irradiation with V
Total Dose Irradiation with VGSGS
GSGS
GS Bias. Bias.
Bias. Bias.
Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
➅ Total Dose Irradiation with VTotal Dose Irradiation with V
Total Dose Irradiation with VTotal Dose Irradiation with V
Total Dose Irradiation with VDSDS
DSDS
DS Bias. Bias.
Bias. Bias.
Bias.
200 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD = 50V, starting TJ = 25°C, L= 1.0 mH
Peak IL = 31A, VGS = 12V
➂ ISD ≤ 31A, di/dt ≤ 300A/µs,
VDD ≤ 250V, TJ ≤ 150°C
Footnotes: Footnotes:
Footnotes: Footnotes:
Footnotes:
IR WORLD HEADQUARTERS:IR WORLD HEADQUARTERS:
IR WORLD HEADQUARTERS:IR WORLD HEADQUARTERS:
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information..
..
.
Data and specifications subject to change without notice. 06/01
Case Outline and Dimensions TO-254AACase Outline and Dimensions TO-254AA
Case Outline and Dimensions TO-254AACase Outline and Dimensions TO-254AA
Case Outline and Dimensions TO-254AA
3.78 ( .149 )
3.53 ( .139 )
-A-
13.84 ( .545 )
13.59 ( .535 ) 6.60 ( .260 )
6.32 ( .249 )
20.32 ( .800 )
20.07 ( .790 ) 13.84 ( .545 )
13.59 ( .535 )
-C-
1.14 ( .045 )
0.89 ( .035 ) 3.81 ( .150 )
1.27 ( .050 )
1.02 ( .040 )
-B-
.12 ( .005 )
3X
2X
3.81 ( .150 )
1 2 3
17.40 ( .685 )
16.89 ( .665 )
31.40 ( 1.235 )
30.39 ( 1.199 )
NOTES:
.50 ( .020 ) M C A M B
.25 ( .010 ) M C
LEGEND
1 - COL
L
2 - EMI
T
3 - GAT
E
IRHM57163SEDIRHM57163SED
IRHM57163SEDIRHM57163SED
IRHM57163SED
IRHM57163SEUIRHM57163SEU
IRHM57163SEUIRHM57163SEU
IRHM57163SEU
LEGEND
1- DRAIN
2- SOURCE
3- GATE
CAUTION CAUTION
CAUTION CAUTION
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500 BERYLLIA WARNING PER MIL-PRF-19500
BERYLLIA WARNING PER MIL-PRF-19500 BERYLLIA WARNING PER MIL-PRF-19500
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids
that will produce fumes containing beryllium.
