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Document Number: 11004 Revision A- 5 Page 1 of 1 FAX-BACK: (805) 446-4870 www.diodes.com
BAS85T-01I
SILICON SCHOTTKY BARRIER DIODE
Mechanical Data
·Glass case
·Weight: 0.05g (approx)
Maximum Ratings
* Valid provided that electrodes are kept at ambient temperature.
·For general applications
·Low turn-on voltage
·PN junction guard ring
Electrical Characteristics
C
A
B
Min Max
A 3.4 3.6
B 1.40 1.50
C 0.20 0.40
All dimensions in mm
Characteristic Symbol Value Unit
Continuous reverse voltage VR30 V
Forward continuous current* IF200 mA
Peak forward current * IFM 300 mA
Surge forward current* @ tp= 1s IFSM 600 mA
Power dissipation* @ TA= 65°C Ptot 250 mW
Junction temperature Tj125 °C
Operating temperature range TA-65 to +125 °C
Storage temperature range TSTG -65 to +150 °C
Characteristic Symbol Min Typ Max Unit
Reverse breakdown voltage
10 µA pulses
V(BR)R 30 — — V
@T
j= 25°C unless otherwise specified
@ TA= 25°C unless otherwise specified
Features
