www.vishay.com For technical questions, contact: efi@vishay.com Document Number: 61076
96 Revision: 14-Mar-08
MID
Vishay Electro-Films
Thin Film Microwave Resistor
MICROWAVE
RESISTORS
The MID resistor chips on alumina are designed for low shunt
capacitance applications with 200 mW power requirements.
These chips are manufactured using Vishay Electro-Films
(EFI) sophisticated Thin Film equipment and manufacturing
technology. The MIDs are 100 % electrically tested and
visually inspected to MIL-STD-883.
FEATURES
•Wire bondable
•Chip size: 0.050 inches square
•Microwave resistance range: 18 Ω to 500 Ω
•Overall resistance range: 2 Ω to 100 kΩ
•Alumina substrate
•Low stray capacitance: < 0.2 pF
•Power: 200 mW
•Resistor material: Tantalum nitride, self passivating
•Moisture resistant
•High frequency
APPLICATIONS
Vishay EFI MIC chip resistors provide excellent high-frequency response and are ideally suited for prototyping.
Typical application areas are:
•Amplifiers
•Oscillators
•Attenuators
•Couplers
•Filters
Note:
• Only 18 W to 500 W are standard strip line designs for microwave applications
Product may not
be to scale
TEMPERATURE COEFFICIENT OF RESISTANCE, VALUES AND TOLERANCES
PROCESS CODE MICROWAVE
CLASS H* CLASS K* CLASS H* CLASS K*
003 007 - -
002 006 - -
001 005 022 -
000 004 008 009
*MIL-PRF-38534 inspection criteria
2 Ω
1.0 %
Tightest Standard Tolerance Available
± 100 ppm/°C
± 50 ppm/°C
5.1 Ω10 Ω51 kΩ75 kΩ100 kΩ
± 25 ppm/°C
± 200 ppm/°C
25 Ω33 kΩ
STANDARD ELECTRICAL SPECIFICATIONS
PARAMETER
Noise, MIL-STD-202, Method 308 - 20 dB typical
Moisture Resistance, MIL-STD-202, Method 106 ± 0.1 % max. ΔR/R
Stability, 1000 h, + 125 °C, 100 mW ± 0.2 % max. ΔR/R
Operating Temperature Range- 55 °C to + 125 °C
Thermal Shock, MIL-STD-202, Method 107, Test Condition F ± 0.1 % max. ΔR/R
High Temperature Exposure, + 150 °C, 1000 h ± 0.2 % max. ΔR/R
Dielectric Voltage Breakdown 400 V
Insulation Resistance 1012 min.
Operating Voltage100 V max.
DC Pwer Rating at + 70 °C (Derated to Zero at 150 °C) 200 mW max.
5 x Rated Power Short-Time Overload, + 25 °C, 5 s ± 0.1 % max. ΔR/R