Semiconductor Components Industries, LLC, 2001
January, 2000 – Rev. 0 1Publication Order Number:
MMDL301T1/D
MMDL301T1
Preferred Device
Silicon Hot-Carrier Diodes
Schottky Barrier Diode
These devices are designed primarily for high–efficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for low–cost, high–volume consumer
and industrial/commercial requirements. They are available in a
Surface Mount package.
•Extremely Low Minority Carrier Lifetime – 15 ps (Typ)
•Very Low Capacitance – 1.5 pF (Max) @ VR = 15 V
•Low Reverse Leakage – IR = 13 nAdc (Typ)
•Device Marking: 4T
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Symbol Rating Value Unit
VRReverse Voltage 30 Volts
THERMAL CHARACTERISTICS
Symbol Characteristic Max Unit
PDTotal Device Dissipation FR–5 Board,*
TA = 25°C
Derate above 25°C
200
1.57
mW
mW/°C
RJA Thermal Resistance Junction to Ambient 635 °C/W
TJ, Tstg Junction and Storage
Temperature Range –55 to
+150 °C
*FR–5 Minimum Pad
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage (IR = 10 µA) V(BR)R 30 — — Volts
Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1 CT— 0.9 1.5 pF
Reverse Leakage (VR = 25 V) Figure 3 IR— 13 200 nAdc
Forward Voltage (IF = 1.0 mAdc) Figure 4 VF— 0.38 0.45 Vdc
Forward Voltage (IF = 10 mAdc) Figure 4 VF— 0.52 0.6 Vdc
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30 VOLTS SILICON
HOT–CARRIER DETECTOR
AND SWITCHING DIODES
Device Package Shipping
ORDERING INFORMATION
MMDL301T1 SOD–323 3000 / Tape & Reel
PLASTIC
SOD–323
CASE 477
2
1
1
CATHODE
2
ANODE
Preferred devices are recommended choices for future use
and best overall value.
MMDL301T1
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2
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. Total Capacitance
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Minority Carrier Lifetime
IF, FORWARD CURRENT (mA)
Figure 3. Reverse Leakage
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Forward Voltage
VF, FORWARD VOLTAGE (VOLTS)
, FORWARD CURRENT (mA)IF
, REVERSE LEAKAGE ( A)IR
0.2 0.4 0.6 0.8 1.0 1.2
100
10
0 6.0 12 18 24
10
1.0
0.1
0.01
0.001
01020
500
0
0 3.0 6.0 9.0 12 15 21
1.6
3024 2718
1.2
0.8
0.4
f = 1.0 MHz
TA = -40°C
TA = 85°C
TA = 25°C
1.0
0.1
30 40 50 60 70 80 10090
KRAKAUER METHOD
0
2.8
2.4
2.0
30
TA = 100°C
75°C
25°C
, TOTAL CAPACITANCE (pF)CT
, MINORITY CARRIER LIFETIME (ps)
400
300
200
100
SINUSOIDAL
GENERATOR
BALLAST
NETWORK
(PADS)
SAMPLING
OSCILLOSCOPE
(50 INPUT)
PADS
CAPACITIVE
CONDUCTION
FORWARD
CONDUCTION
STORAGE
CONDUCTION
DUT
IF(PEAK)
IR(PEAK)
Figure 5. Krakauer Method of Measuring Lifetime
MMDL301T1
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3
PACKAGE DIMENSIONS
SOD–323
PLASTIC PACKAGE
CASE 477–02
ISSUE A NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A1.60 1.80 0.063 0.071
B1.15 1.35 0.045 0.053
C0.80 1.00 0.031 0.039
D0.25 0.40 0.010 0.016
E0.15 REF 0.006 REF
H0.00 0.10 0.000 0.004
J0.089 0.177 0.0035 0.0070
K2.30 2.70 0.091 0.106
NOTE 3
A
K
12DB
E
H
C
J
STYLE 1:
PIN 1. CATHODE
2. ANODE
0.63mm
0.025
1.60mm
0.063
2.85mm
0.112
0.83mm
0.033
mm
inches
SOD–323
Soldering Footprint
MMDL301T1
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4
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Phone: 81–3–5740–2700
Email: r14525@onsemi.com
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MMDL301T1/D
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