MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54530P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54530P and M54530FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION INPUT FEATURES A High breakdown voltage (BV CEO 40V) A High-current driving (Ic(max) = 400mA) A With clamping diodes A Driving available with PMOS IC output A Wide operating temperature range (Ta = -20 to +75C) IN1 1 16 O1 IN2 2 15 O2 IN3 3 14 O3 IN4 4 13 O4 OUTPUT IN5 5 12 O5 IN6 6 11 O6 IN7 7 10 O7 GND 9 COM COMMON 8 16P4(P) Package type 16P2N-A(FP) CIRCUIT DIAGRAM COM OUTPUT APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces INPUT 20K 20K 2K GND The seven circuits share the COM and GND. FUNCTION The M54530P and M54530FP each have seven circuits consisting of NPN Darlington transistors. These ICs have resistance of 20k between input transistor bases and input pins. A spike-killer clamping diode is provided between each output pin (collector) and COM pin (pin 9). The output transistor emitters are all connected to the GND pin (pin 8). The collector current is 400mA maximum. Collector-emitter supply voltage is 40V maximum. The M54530FP is enclosed in a molded small flat package, enabling space-saving design. ABSOLUTE MAXIMUM RATINGS Symbol VCEO IC VI IF VR Pd Topr Tstg The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : (Unless otherwise noted, Ta = -20 ~ +75 C) Parameter Collector-emitter voltage Collector current Conditions Output, H Current per circuit output, L Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Ta = 25C, when mounted on board Ratings -0.5 ~ +40 Unit V 400 mA -0.5 ~ +40 400 V mA 40 1.47(P)/1.00(FP) V W -20 ~ +75 -55 ~ +125 C C Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54530P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS Symbol VO Limits Parameter Output voltage Collector current (Current per 1 circuit when 7 circuits are coming on simultaneously) IC (Unless otherwise noted, Ta = -20 ~ +75C) VIH "H" input voltage VIL "L" input voltage Duty Cycle P : no more than 8% FP : no more than 6% Duty Cycle P : no more thn 30% FP : no more than 25% IC 400mA typ max 0 -- 40 0 -- 400 0 -- 200 8 -- 5 -- -- Unit V mA IC 200mA ELECTRICAL CHARACTERISTICS min 0 35 V 0.5 V (Unless otherwise noted, Ta = -20 ~ +75C) Symbol Parameter V (BR) CEO Collector-emitter breakdown voltage VCE (sat) VI = 8V, I C = 400mA Collector-emitter saturation voltage VI = 5V, I C = 200mA II Input current VI = 17V VI = 35V VF Clamping diode forward voltage IF = 400mA IR h FE Clamping diode reverse current DC amplification factor VR = 40V VCE = 4V, IC = 300mA, Ta = 25C Limits Test conditions typ+ -- max -- -- -- 1.3 1.0 2.4 1.6 -- 0.85 1.8 -- -- 2.0 1.5 3.8 2.4 -- 3500 100 -- min 40 ICEO = 100A -- 1000 Unit V V mA V A -- + : The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol Parameter ton Turn-on time toff Turn-off time Test conditions CL = 15pF (note 1) NOTE 1 TEST CIRCUIT Limits typ max -- 35 -- ns -- 760 -- ns min Unit TIMING DIAGRAM VO INPUT 50% Measured device 50% INPUT RL OPEN OUTPUT PG OUTPUT 50 CL 50% ton 50% toff (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, ZO = 50 VP = 8VP-P (2) Input-output conditions : RL = 25, VO = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54530P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics Thermal Derating Factor Characteristics 400 VI = 5V Collector current Ic (mA) Power dissipation Pd (W) 2.0 M54530P 1.5 M54530FP 1.0 0.5 300 200 100 Ta = 25C Ta = 75C Ta = -20C 0 0 25 50 75 0 100 2.0 Duty-Cycle-Collector Characteristics (M54530P) 500 300 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 100 0 20 40 60 80 Collector current Ic (mA) Collector current Ic (mA) 1.5 Duty-Cycle-Collector Characteristics (M54530P) 400 300 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 75C 100 0 100 0 20 40 60 80 Duty cycle (%) Duty cycle (%) Duty-Cycle-Collector Characteristics (M54530FP) Duty-Cycle-Collector Characteristics (M54530FP) 100 500 400 300 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 25C 100 0 20 40 60 Duty cycle (%) 80 100 Collector current Ic (mA) 500 Collector current Ic (mA) 1.0 Output saturation voltage VCE (sat) (V) 400 0 0.5 Ambient temperature Ta (C) 500 0 0 400 300 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. 100 0 0 20 40 60 *Ta = 75C 80 100 Duty cycle (%) Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54530P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DC Amplification Factor Collector Current Characteristics Grounded Emitter Transfer Characteristics 104 400 Ta = 75C 5 Ta = 25C 3 Ta = -20C 2 103 7 5 3 Collector current Ic (mA) DC amplification factor hFE VCE = 4V VCE = 4V 7 300 200 Ta = 75C 100 Ta = 25C 2 Ta = -20C 102 1 10 2 3 5 7 102 2 0 5 7 103 3 0 Collector current Ic (mA) 2 3 4 Input voltage VI (V) Clamping Diode Characteristics Input Characteristics 400 1.5 Ta = -20C 1.0 Ta = 25C Ta = 75C 0.5 Forward bias current IF (mA) 2.0 Input current II (mA) 1 300 200 100 Ta = 25C Ta = 75C Ta = -20C 0 0 5 10 15 Input voltage VI (V) 20 25 0 0 0.5 1.0 1.5 2.0 Forward bias voltage VF (V) Aug. 1999